Low-voltage, high-speed, and high-precision current-mode sample-and-hold circuit

1995 ◽  
Vol 78 (7) ◽  
pp. 68-81 ◽  
Author(s):  
Yasuhiro Sugimoto ◽  
Hisao Kakitani ◽  
Hiroyuki Tsurumi
Keyword(s):  
High Precision ◽  
High Speed ◽  
Low Voltage ◽  
Current Mode ◽  
Sample And Hold

scholarly journals Investigation of PVT-Aware STT-MRAM Sensing Circuits for Low-VDD Scenario

Micromachines ◽  
2021 ◽  
Vol 12 (5) ◽  
pp. 551
Author(s):  
Zhongjian Bian ◽  
Xiaofeng Hong ◽  
Yanan Guo ◽  
Lirida Naviner ◽  
Wei Ge ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
High Speed ◽  
Low Voltage ◽  
Supply Voltage ◽  
Random Access ◽  
Magnetic Tunnel Junction ◽  
Complementary Metal Oxide Semiconductor ◽  
Current Mode ◽  
Cmos Technology ◽  
Oxide Semiconductor

Spintronic based embedded magnetic random access memory (eMRAM) is becoming a foundry validated solution for the next-generation nonvolatile memory applications. The hybrid complementary metal-oxide-semiconductor (CMOS)/magnetic tunnel junction (MTJ) integration has been selected as a proper candidate for energy harvesting, area-constraint and energy-efficiency Internet of Things (IoT) systems-on-chips. Multi-VDD (low supply voltage) techniques were adopted to minimize energy dissipation in MRAM, at the cost of reduced writing/sensing speed and margin. Meanwhile, yield can be severely affected due to variations in process parameters. In this work, we conduct a thorough analysis of MRAM sensing margin and yield. We propose a current-mode sensing amplifier (CSA) named 1D high-sensing 1D margin, high 1D speed and 1D stability (HMSS-SA) with reconfigured reference path and pre-charge transistor. Process-voltage-temperature (PVT) aware analysis is performed based on an MTJ compact model and an industrial 28 nm CMOS technology, explicitly considering low-voltage (0.7 V), low tunneling magnetoresistance (TMR) (50%) and high temperature (85 °C) scenario as the worst sensing case. A case study takes a brief look at sensing circuits, which is applied to in-memory bit-wise computing. Simulation results indicate that the proposed high-sensing margin, high speed and stability sensing-sensing amplifier (HMSS-SA) achieves remarkable performance up to 2.5 GHz sensing frequency. At 0.65 V supply voltage, it can achieve 1 GHz operation frequency with only 0.3% failure rate.

scholarly journals A low-voltage CMOS current-mode incremental signaling scheme for high-speed parallel links

2021 ◽  
Author(s):  
Tao Wang
Keyword(s):  
High Speed ◽  
Low Voltage ◽  
Low Cost ◽  
Current Mode ◽  
Cmos Technology ◽  
Fully Differential ◽  
Parallel Links ◽  
Data Links ◽  
Parallel Data ◽  
The Cost

Point-to-point parallel links are widly used in short-distance high-speed data communications. For these links, the design goal is not only to integrate a large number of I/Os in the systems, but also to increase the bit rate per I/O. The cost per I/O has to be kept low as performance improves. Voltage and timing error sources limit the performance of data links and affect its robustnest. These kinds of noise impose greater challenges in parallel data links, such as inter-signal timing skew and inter-signal cross-talk. The use of low-cost schemes, such as single-ended signaling, is effected signaficantly [sic] by the voltage and timging [sic] noise. Fully differential signaling schemes, two physical paths per signal channel, significantly increases the cost of system. Therefore, overcoming the voltage noise, keeping the cost low are two challenges in high-speed parallel links. In this thesis, we propose a new current-mode signaling scheme current-mode incremtnal [sic] signaling for high-speed parallel links. Also, the circuits of the receiver called current-integrating receiver are presented. To assess the effectiveness of the proposed signaling scheme, a 4-bit parallel link consisting of four bipolar current-mode drivers, five 10 cm microstrip lines with a FR4 substrate, and four proposed current-integrating receivers is implemented in UMC 0.13[micro]m, 1.2V CMOS technology and analyzed using SpectreRF from Cadence Design Systems with BSIM3V3 device models. Simulation results demonstrate that the proposed current-mode incremental signaling scheme and the current-integrating receiver are capable of transmitting parallel data at 2.5 Gbyte/s.

Sign in / Sign up

Export Citation Format

Share Document