TE-TM mode switching in tensile-strained quantum-well lasers induced by an electric field

Matsuto Ogawa

doi:10.1002/ecjb.4420780606

TE-TM mode switching in tensile-strained quantum-well lasers induced by an electric field

Electronics and Communications in Japan (Part II Electronics) ◽

10.1002/ecjb.4420780606 ◽

1995 ◽

Vol 78 (6) ◽

pp. 46-56 ◽

Cited By ~ 1

Author(s):

Matsuto Ogawa

Keyword(s):

Electric Field ◽

Quantum Well ◽

Quantum Well Lasers ◽

Mode Switching ◽

Tm Mode ◽

Strained Quantum Well

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Highly efficient TE/TM mode switching of GaAsP/AlGaAs strained quantum‐well laser diodes

Applied Physics Letters ◽

10.1063/1.111956 ◽

1994 ◽

Vol 64 (2) ◽

pp. 158-160 ◽

Cited By ~ 18

Author(s):

Hidenao Tanaka ◽

Jun‐ichi Shimada ◽

Yoshio Suzuki

Keyword(s):

Quantum Well ◽

Laser Diodes ◽

Mode Switching ◽

Quantum Well Laser ◽

Highly Efficient ◽

Tm Mode ◽

Strained Quantum Well

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TE/TM mode switching of GaAsP strained quantum-well laser diodes

10.1117/12.146901 ◽

1993 ◽

Cited By ~ 1

Author(s):

Hidenao Tanaka ◽

Jun-ichi Shimada

Keyword(s):

Quantum Well ◽

Laser Diodes ◽

Mode Switching ◽

Quantum Well Laser ◽

Tm Mode ◽

Strained Quantum Well

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Transverse-Electric and Transverse-Magnetic Mode Switching in Tensile-Strained Quantum-Well Lasers Induced by the Quantum-Confined Stark Effect

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.4535 ◽

1995 ◽

Vol 34 (Part 1, No. 8B) ◽

pp. 4535-4539 ◽

Cited By ~ 1

Author(s):

Matsuto Ogawa ◽

Tanroku Miyoshi

Keyword(s):

Quantum Well ◽

Stark Effect ◽

Transverse Electric ◽

Transverse Magnetic ◽

Quantum Well Lasers ◽

Mode Switching ◽

Transverse Magnetic Mode ◽

Quantum Confined Stark Effect ◽

Magnetic Mode ◽

Strained Quantum Well

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780 nm band TM-mode laser operation of GaAsP/AlGaAs tensile-strained quantum-well lasers

Electronics Letters ◽

10.1049/el:19931073 ◽

1993 ◽

Vol 29 (18) ◽

pp. 1611 ◽

Cited By ~ 9

Author(s):

H. Tanaka

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Laser Operation ◽

Mode Laser ◽

Tm Mode ◽

Strained Quantum Well

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High power InGaAs-GaAs-InGaP buried heterostructure strained quantum well lasers grown by two step MOVPE

Electronics Letters ◽

10.1049/el:19930165 ◽

1993 ◽

Vol 29 (2) ◽

pp. 240 ◽

Cited By ~ 6

Author(s):

Y.K. Sin ◽

H. Horikawa ◽

T. Kamijoh

Keyword(s):

Quantum Well ◽

High Power ◽

Quantum Well Lasers ◽

Buried Heterostructure ◽

Strained Quantum Well

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Comment on “Theory and Experiment of ${\hbox{In}}_{1-{x}}{\hbox {Ga}}_{x}{\hbox {As}}_{y}{\hbox{P}}_{1-{y}}$ and ${\hbox{In}}_{1-{x}-{y}}{\hbox {Ga}}_{x}{\hbox {Al}}_{y}{\hbox {As}}$ Long-Wavelength-Strained Quantum-Well Lasers”

IEEE Journal of Quantum Electronics ◽

10.1109/jqe.2009.2025251 ◽

2009 ◽

Vol 45 (10) ◽

pp. 1302-1302 ◽

Cited By ~ 1

Author(s):

Yean-Sheng Yong ◽

Hin-Yong Wong ◽

Ho-Kwang Yow

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Long Wavelength ◽

Strained Quantum Well ◽

Theory And Experiment

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Temperature-dependent behavior of 980-nm strained quantum well lasers

10.1117/12.208443 ◽

1995 ◽

Cited By ~ 1

Author(s):

Rashit F. Nabiev ◽

Edward C. Vail ◽

Constance J. Chang-Hasnain

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Temperature Dependent ◽

Dependent Behavior ◽

Strained Quantum Well ◽

Temperature Dependent Behavior

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Theory and experiment of In/sub 1-x/Ga/sub x/As/sub y/P/sub 1-y/ and In/sub 1-x-y/Ga/sub x/Al/sub y/As long-wavelength strained quantum-well lasers

IEEE Journal of Quantum Electronics ◽

10.1109/3.760325 ◽

1999 ◽

Vol 35 (5) ◽

pp. 771-782 ◽

Cited By ~ 170

Author(s):

J. Minch ◽

S.H. Park ◽

T. Keating ◽

S.L. Chuang

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Long Wavelength ◽

Strained Quantum Well ◽

Theory And Experiment

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ZnMgSSe/ZnSSe/CdZnSe strained quantum well lasers grown on (511)A

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.588148 ◽

1995 ◽

Vol 13 (2) ◽

pp. 731 ◽

Cited By ~ 2

Author(s):

I. W. Tao

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Strained Quantum Well

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Ultralow laser threshold and high speed InGaAs-GaAs-InGaP buried heterostructure strained quantum well lasers for optical interconnects

Electronics Letters ◽

10.1049/el:19930583 ◽

1993 ◽

Vol 29 (10) ◽

pp. 873-875 ◽

Cited By ~ 9

Author(s):

Y.K. Sin ◽

H. Horikawa ◽

Y. Matsui ◽

T. Kamijoh

Keyword(s):

Quantum Well ◽

Optical Interconnects ◽

High Speed ◽

Quantum Well Lasers ◽

Laser Threshold ◽

Buried Heterostructure ◽

Strained Quantum Well

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