High-speed self-aligned SiGe HBT and application to optical-fiber-link ICs

2002 ◽  
Vol 85 (7) ◽  
pp. 66-76
Author(s):  
Hiromi Shimamoto ◽  
Eiji Ohue ◽  
Katsuya Oda ◽  
Reiko Hayami ◽  
Masamichi Tanabe ◽  
...  
Keyword(s):  
Optical Fiber ◽  
High Speed ◽  
Sige Hbt ◽  
Fiber Link

TEM study of phosphorus-implanted pseudomorphic Si0.88Ge0.12 on Si(100)

1995 ◽  
Vol 53 ◽  
pp. 468-469
Author(s):  
N. David Theodore ◽  
Donald Y.C Lie ◽  
J. H. Song ◽  
Peter Crozier
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
High Speed ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Bipolar Transistors ◽  
Sige Hbt ◽  
Integrated Circuit Manufacturing ◽  
Microstructural Behavior

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.

High speed optical switching gain based EDFA model with 30 Gb/s NRZ modulation code in optical systems

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Mahmoud M. A. Eid ◽  
Ahmed Nabih Zaki Rashed ◽  
Keyword(s):  
Optical Fiber ◽  
High Speed ◽  
Optical Switching ◽  
Fiber Amplifier ◽  
Optical Systems ◽  
Power Budget ◽  
Erbium Doped Fiber Amplifier ◽  
Amplifier Model ◽  
Modulation Rate ◽  
Modulation Code

AbstractThis study presents high speed optical switching gain based Erbium doped fiber amplifier model. By using the proposed model the optical fiber loss can be minimized. The system is stabilized with the power budget of 25.875 mW a long 75 km as a length of optical fiber in this study can be verified. The modulation rate of 10 Gb/s can be upgrade up to reach 30 Gb/s. The suitable power for the optical transmitter is −2.440 dBm and NRZ modulation code is verified. The receiver sensitivity can be upgraded with the minimum bit error rate and max Q factor are 1.806 e−009 and 5.899.

Analysis of graded-index polymer optical fiber link performance under fiber bending

2005 ◽  
Vol 23 (6) ◽  
pp. 2062-2072 ◽  
Author(s):  
K. Makino ◽  
T. Nakamura ◽  
T. Ishigure ◽  
Y. Koike
Keyword(s):  
Optical Fiber ◽  
Polymer Optical Fiber ◽  
Graded Index ◽  
Link Performance ◽  
Fiber Link

scholarly journals Full Optical Fiber Link Characterization With the BSS-Lasso

2019 ◽  
Vol 68 (10) ◽  
pp. 4162-4174 ◽  
Author(s):  
Raphael Saavedra ◽  
Pedro Tovar ◽  
Gustavo C. Amaral ◽  
Bruno Fanzeres
Keyword(s):  
Optical Fiber ◽  
Fiber Link

Ripple Technique; a Novel Non-Contact Wafer Emissivity and Temperature Method for RTP

1991 ◽  
Vol 224 ◽  
Author(s):  
C. Schietinger ◽  
B. Adams ◽  
C. Yarling
Keyword(s):  
Optical Fiber ◽  
Measurement Technique ◽  
Thermal Processing ◽  
High Speed ◽  
Rapid Thermal Processing ◽  
Wafer Surface ◽  
Speed Measurement ◽  
Temperature Method ◽  
Emissivity Measurement ◽  
Emissivity Measurements

AbstractA novel wafer temperature and emissivity measurement technique for rapid thermal processing (RTP) is presented. The ‘Ripple Technique’ takes advantage of heating lamp AC ripple as the signature of the reflected component of the radiation from the wafer surface. This application of Optical Fiber Thermometry (OFT) allows high speed measurement of wafer surface temperatures and emissivities. This ‘Ripple Technique’ is discussed in theoretical and practical terms with wafer data presented. Results of both temperature and emissivity measurements are presented for RTP conditions with bare silicon wafers and filmed wafers.

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