scholarly journals The 39th Manfred Donike workshop on doping analysis

2021 ◽  
Author(s):  
Mario Thevis
Keyword(s):  
Doping Analysis

scholarly journals Stanozolol‐ N ‐glucuronide metabolites in human urine samples as suitable targets in terms of routine anti‐doping analysis

2021 ◽  
Author(s):  
Lorenz Göschl ◽  
Günter Gmeiner ◽  
Peter Gärtner ◽  
Georg Stadler ◽  
Valentin Enev ◽  
...  
Keyword(s):  
Human Urine ◽  
Urine Samples ◽  
Doping Analysis ◽  
Human Urine Samples

scholarly journals Specificity and selectivity improvement in doping analysis using comprehensive two-dimensional gas chromatography coupled with time-of-flight mass spectrometry

Química Nova ◽  
2012 ◽  
Vol 35 (5) ◽  
pp. 982-987 ◽  
Author(s):  
Samantha S. Barbosa ◽  
Felipe D. Leal ◽  
Monica C. Padilha ◽  
Raphael S. F. Silva ◽  
Henrique Marcelo G. Pereira ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Gas Chromatography ◽  
Time Of Flight ◽  
Two Dimensional ◽  
Doping Analysis ◽  
Flight Mass Spectrometry ◽  
In Doping

scholarly journals Response to Comment on “Resolving spatial and energetic distributions of trap states in metal halide perovskite solar cells”

Science ◽  
2021 ◽  
Vol 371 (6532) ◽  
pp. eabd8598
Author(s):  
Zhenyi Ni ◽  
Shuang Xu ◽  
Jinsong Huang
Keyword(s):  
Solar Cells ◽  
Perovskite Solar Cells ◽  
Differential Capacitance ◽  
Drive Level ◽  
Trap Density ◽  
Trap States ◽  
Doping Analysis ◽  
Metal Halide Perovskite ◽  
Diffusion Capacitance ◽  
Halide Perovskite

Ravishankar et al. claimed that drive-level capacitance profiling (DLCP) cannot resolve trap density in perovskites of given thickness. We point out that the trap densities derived by DLCP are from the differential capacitance at different frequencies; thus, the background charges caused by diffusion and geometry capacitance have been subtracted. Even for the nondifferential doping analysis, the contribution from diffusion capacitance is negligible and that from geometry capacitance is excluded.

Scanning Capacitance Microscopy of Dopants in III-V Semiconductors

1998 ◽  
Vol 4 (S2) ◽  
pp. 640-641
Author(s):  
David V. Lang
Keyword(s):  
Quantum Well ◽  
Laser Beam ◽  
Surface Topography ◽  
Cross Sections ◽  
Beam Deflection ◽  
Doping Analysis ◽  
Scanning Capacitance Microscopy ◽  
Sample Spacing ◽  
Doping Profiles ◽  
Multi Quantum Well

Scanning Capacitance Microscopy (SCM) was first developed in 1985 as a method for sensing tip-to-sample spacing for surface topography profiling in connection with the RCA VideoDisc. Williams and coworkers were the first to use an SCM for obtaining dC/dV doping profiles in semiconductors, albeit with a rather modest resolution of 200 nm. More recently, it has been developed as a 50-nmresolution tool for microscopic doping analysis of semiconductors by measuring the tip-to-sample rf capacitance in an AFM controlled by other means, e.g. by laser beam deflection of a cantilever tip. In this paper we report on the application of SCM to study the 2D doping profiles of InP-based devices, such as multi-quantum well lasers.It is particularly convenient to prepare cross sections of III-V devices, since the material readily cleaves on [110] planes, as compared to silicon where cross sections must be obtained by painstaking polishing.

The Relevance of Epitestosterone in Doping Analysis

1993 ◽  
Vol 15 (2) ◽  
pp. 169 ◽  
Author(s):  
D de Boer ◽  
RAA Maes
Keyword(s):  
Doping Analysis ◽  
In Doping
Sign in / Sign up

Export Citation Format

Share Document