scholarly journals The 39th Manfred Donike workshop on doping analysis

2021 ◽  
Author(s):  
Mario Thevis
Keyword(s):  
2021 ◽  
Author(s):  
Lorenz Göschl ◽  
Günter Gmeiner ◽  
Peter Gärtner ◽  
Georg Stadler ◽  
Valentin Enev ◽  
...  

Química Nova ◽  
2012 ◽  
Vol 35 (5) ◽  
pp. 982-987 ◽  
Author(s):  
Samantha S. Barbosa ◽  
Felipe D. Leal ◽  
Monica C. Padilha ◽  
Raphael S. F. Silva ◽  
Henrique Marcelo G. Pereira ◽  
...  

Science ◽  
2021 ◽  
Vol 371 (6532) ◽  
pp. eabd8598
Author(s):  
Zhenyi Ni ◽  
Shuang Xu ◽  
Jinsong Huang

Ravishankar et al. claimed that drive-level capacitance profiling (DLCP) cannot resolve trap density in perovskites of given thickness. We point out that the trap densities derived by DLCP are from the differential capacitance at different frequencies; thus, the background charges caused by diffusion and geometry capacitance have been subtracted. Even for the nondifferential doping analysis, the contribution from diffusion capacitance is negligible and that from geometry capacitance is excluded.


1998 ◽  
Vol 4 (S2) ◽  
pp. 640-641
Author(s):  
David V. Lang

Scanning Capacitance Microscopy (SCM) was first developed in 1985 as a method for sensing tip-to-sample spacing for surface topography profiling in connection with the RCA VideoDisc. Williams and coworkers were the first to use an SCM for obtaining dC/dV doping profiles in semiconductors, albeit with a rather modest resolution of 200 nm. More recently, it has been developed as a 50-nmresolution tool for microscopic doping analysis of semiconductors by measuring the tip-to-sample rf capacitance in an AFM controlled by other means, e.g. by laser beam deflection of a cantilever tip. In this paper we report on the application of SCM to study the 2D doping profiles of InP-based devices, such as multi-quantum well lasers.It is particularly convenient to prepare cross sections of III-V devices, since the material readily cleaves on [110] planes, as compared to silicon where cross sections must be obtained by painstaking polishing.


1993 ◽  
Vol 15 (2) ◽  
pp. 169 ◽  
Author(s):  
D de Boer ◽  
RAA Maes
Keyword(s):  

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