scholarly journals Increased immunofluorescence sensitivity using 532 nm laser excitation

2007 ◽  
Vol 71A (2) ◽  
pp. 73-79 ◽  
Author(s):  
Stephen P. Perfetto ◽  
Mario Roederer
Keyword(s):  
Laser Excitation ◽  
532 Nm

Nonlinear optical properties of colloidal carbon nanoparticles: nanodiamonds and carbon dots

RSC Advances ◽  
2014 ◽  
Vol 4 (76) ◽  
pp. 40152-40160 ◽  
Author(s):  
Irene Papagiannouli ◽  
Athanasios B. Bourlinos ◽  
Aristides Bakandritsos ◽  
Stelios Couris
Keyword(s):  
Optical Properties ◽  
Carbon Dots ◽  
Carbon Nanoparticles ◽  
Nonlinear Optical ◽  
Laser Excitation ◽  
Optical Limiting ◽  
Nonlinear Optical Properties ◽  
Nlo Response ◽  
Colloidal Carbon ◽  
532 Nm

Nanodiamonds (NDs) and carbon-dots (CDs) suspensions exhibit significant NLO response under both ps and ns laser excitation. NDs exhibit important optical limiting action under nanosecond visible (532 nm) and infrared (1064 nm) laser excitation.

Light transfer from quantum-dot-doped polymer nanowires to silver nanowires

RSC Advances ◽  
2015 ◽  
Vol 5 (75) ◽  
pp. 60770-60774 ◽  
Author(s):  
Xianguang Yang ◽  
Dinghua Bao ◽  
Baojun Li
Keyword(s):  
Quantum Dot ◽  
Laser Excitation ◽  
Silver Nanowires ◽  
Polymer Nanowires ◽  
Doped Polymer ◽  
Light Transfer ◽  
532 Nm

The plasmons of two silver nanowires are simultaneously excited by photoluminescence of the quantum-dot-doped nanowire under 532 nm laser excitation.

Ultraviolet upconversion luminescence of Gd3+ from Ho3+ and Gd3+ codoped oxide ceramic induced by 532-nm CW laser excitation

2011 ◽  
Vol 284 (12) ◽  
pp. 3114-3117 ◽  
Author(s):  
Feng Qin ◽  
Yangdong Zheng ◽  
Ying Yu ◽  
Changbin Zheng ◽  
Pouran Sadat Tayebi ◽  
...  
Keyword(s):  
Laser Excitation ◽  
Upconversion Luminescence ◽  
Oxide Ceramic ◽  
Cw Laser ◽  
532 Nm

Photophysical and nonlinear optical study of benzothiazole substituted phthalocyanines in solution and thin films

2017 ◽  
Vol 21 (04-06) ◽  
pp. 263-272 ◽  
Author(s):  
Njemuwa Nwaji ◽  
Owolabi M. Bankole ◽  
Jonathan Britton ◽  
Tebello Nyokong
Keyword(s):  
Thin Films ◽  
Nonlinear Optical ◽  
Laser Excitation ◽  
Optical Limiting ◽  
Optical Study ◽  
Optical Performance ◽  
Third Order ◽  
Limiting Behavior ◽  
532 Nm ◽  
Order Susceptibility

In this study, the photophysical, nonlinear absorption and nonlinear optical limiting properties of zinc and gallium phthalocyanine complexes: tetrakis[(benzo[d]thiazol-2-yl phenoxy)phthalocyaninato]zinc(II) (3), tetrakis[(benzo[d]thiazol-2-yl phenoxy)phthalocyaninato] gallium(III) chloride (4), tetrakis[(benzo[d]thiazol-2-ylthio)phthalocyaninato] zinc(II) (5), tetrakis[(benzo[d]thiazol-2-ylthio)phthalocyaninato] gallium(III) chloride (6), were investigated both in solution and when embedded in polystyrene thin films using 532 nm laser excitation at 10 ns pulses. It was also observed that complexes that have higher triplet state absorption also possessed enhanced nonlinear and optical limiting behavior. Superior optical performance was observed when the complexes were embedded in thin films compared to when they are in solution. Complex 6 in thin films gave the highest imaginary third-order susceptibility (I[Formula: see text][X[Formula: see text]]) and hyperpolarizability ([Formula: see text] at 4.61 × 10[Formula: see text] esu and 3.44 × 10[Formula: see text] esu, respectively, with a low I[Formula: see text] value of 0.06 J.cm[Formula: see text]

scholarly journals GaInP nanowire arrays for color conversion applications

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Dennis Visser ◽  
Yohan Désières ◽  
Marcin Swillo ◽  
Eleonora De Luca ◽  
Srinivasan Anand
Keyword(s):  
Room Temperature ◽  
Laser Excitation ◽  
Incident Light ◽  
Nanowire Arrays ◽  
Pattern Transfer ◽  
Transparent Film ◽  
Transparent Films ◽  
Color Conversion ◽  
Difference Time ◽  
532 Nm

AbstractColor conversion by (tapered) nanowire arrays fabricated in GaInP with bandgap emission in the red spectral region are investigated with blue and green source light LEDs in perspective. GaInP nano- and microstructures, fabricated using top-down pattern transfer methods, are derived from epitaxial Ga0.51In0.49P/GaAs stacks with pre-determined layer thicknesses. Substrate-free GaInP micro- and nanostructures obtained by selectively etching the GaAs sacrificial layers are then embedded in a transparent film to generate stand-alone color converting films for spectrophotometry and photoluminescence experiments. Finite-difference time-domain simulations and spectrophotometry measurements are used to design and validate the GaInP structures embedded in (stand-alone) transparent films for maximum light absorption and color conversion from blue (450 nm) and green (532 nm) to red (~ 660 nm) light, respectively. It is shown that (embedded) 1 μm-high GaInP nanowire arrays can be designed to absorb ~ 100% of 450 nm and 532 nm wavelength incident light. Room-temperature photoluminescence measurements with 405 nm and 532 nm laser excitation are used for proof-of-principle demonstration of color conversion from the embedded GaInP structures. The (tapered) GaInP nanowire arrays, despite very low fill factors (~ 24%), can out-perform the micro-arrays and bulk-like slabs due to a better in- and out-coupling of source and emitted light, respectively.

Near-Infrared Excited Raman Optical Activity

2007 ◽  
Vol 61 (10) ◽  
pp. 1103-1106 ◽  
Author(s):  
Laurence A. Nafie ◽  
Bruce E. Brinson ◽  
Xiaolin Cao ◽  
David A. Rice ◽  
Omar M. Rahim ◽  
...  
Keyword(s):  
Optical Activity ◽  
Near Infrared ◽  
Laser Excitation ◽  
Visible Region ◽  
Fourth Power ◽  
Power Dependence ◽  
Expected Frequency ◽  
Raman Optical Activity ◽  
Infrared Excitation ◽  
532 Nm

Measurements of near-infrared scattered circular polarization Raman optical activity (SCP-ROA) are presented using laser excitation at 780 nm for samples of S-(—)-α-pinene and L-alanyl-L-alanine. These are the first measurements of ROA outside the blue-to-green visible region between 488 and 532 nm. Comparison of Raman and ROA intensities measured with excitation at 532 and 780 nm demonstrate that the expected frequency to the fourth-power dependence for Raman scattering and the corresponding fifth-power dependence for ROA are observed. It can be concluded that, to within this frequency dependence, the same level of efficiency of Raman and ROA measurements using commercial instrumentation with 532 nm excitation is maintained with the change to near-infrared excitation at 780 nm.

ULTRAVIOLET AND BLUE UPCONVERSION EMISSIONS OF NaYF4:La3+(Er3+, Tb3+) NANOCRYSTALS UNDER 532 NM LASER EXCITATION

2009 ◽  
Vol 18 (04) ◽  
pp. 605-610 ◽  
Author(s):  
HUIJUAN LIANG ◽  
LI WU ◽  
GUANYING CHEN ◽  
YUAN LIU ◽  
LONG LI ◽  
...  
Keyword(s):  
Room Temperature ◽  
Laser Excitation ◽  
Potential Applications ◽  
Upconversion Emissions ◽  
532 Nm

The upconversion (UC) fluorescences from 300 nm to 500 nm of NaYF4:La3+(Er3+, Tb3+) nanocrystals under 532 nm laser excitation were investigated at room temperature. These UC luminescences have potential applications in UC lasers.

Response Time Measurements and Flying Spot Technique in Microcrystalline Silicon Solar Cells

2000 ◽  
Vol 609 ◽  
Author(s):  
R. Schwarz ◽  
P. Sanguino ◽  
S. Koynov ◽  
M. Fernandes ◽  
F. Maçarico ◽  
...  
Keyword(s):  
Response Time ◽  
Peak Power ◽  
Laser Excitation ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Microcrystalline Silicon ◽  
Minority Carrier Diffusion Length ◽  
Transient Photoconductivity ◽  
532 Nm ◽  
Flying Spot

ABSTRACTTransverse charge collection in a p-i-n structure based on microcrystalline silicon and lateral transport in a single intrinsic layer were analyzed using transient photoconductivity (TPC), steady-state photocarrier grating analysis (SSPG), and the flying spot technique (FST). Photocurrents were excited either with HeNe laser light (633 nm, intensity about 20 mW/cm2) or with 5 ns pulses from a Nd:YAG laser (532 nm, peak power of about 500 kW/cm2 with 5 mJ pulses). The response time τR varied greatly from about 3 ms at low intensity down to a few μs under pulsed laser excitation. The minority carrier diffusion length LD measured by FST in diode structures was usually larger than values obtained from the SSPG method applied to intrinsic microcrystalline layers.

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