Conformity of Aluminum Thin Films Deposited onto Micro-Patterned Silicon Wafers by Pulsed Laser Deposition, Magnetron Sputtering, and CVD

2011 ◽  
Vol 17 (10-12) ◽  
pp. 366-374 ◽  
Author(s):  
Anne-Lise Thomann ◽  
Constantin Vahlas ◽  
Lyacine Aloui ◽  
Diane Samelor ◽  
Amael Caillard ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Silicon Wafers ◽  
Laser Deposition

scholarly journals Combined magnetron sputtering and pulsed laser deposition of TiO 2 and BFCO thin films

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
D. Benetti ◽  
R. Nouar ◽  
R. Nechache ◽  
H. Pepin ◽  
A. Sarkissian ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition

Growth of Sr1−xNdxCuOy Thin Films by Rf-Magnetron Sputtering and Pulsed-Laser Deposition

1992 ◽  
Vol 275 ◽  
Author(s):  
Nobuyuki Sugii ◽  
Michiharu Ichikawa ◽  
Koichi Kubo ◽  
Takeshi Sakurai ◽  
Kiyoshi Yamamoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Pulsed Laser Deposition ◽  
Layer Structure ◽  
Pulsed Laser ◽  
Rf Magnetron Sputtering ◽  
Lattice Parameter ◽  
Laser Deposition ◽  
Infinite Layer ◽  
Sputter Deposited

ABSTRACTSr1−xNdxCuOy thin films are grown on SrTiO3 substrates by rf-magnetron sputtering and pulsed-laser deposition. The sputter-deposited film with x=0 has an “infinite-layer” structure whose lattice constants are: α=0.390 nm and c=0.347 nm. When x is larger than 0.1, the films contain a phase of the Sr14CuO24O41 structure. The laser-deposited films of Sr1−xNdxCuOy with x≤.075 were single phase of the “infinite-layer” structure. The lattice parameter c decreased and the lattice parameter αincreased, as the Nd content, x, increased. The films with α=0.10 and 0.125 exhibited superconducting onset temperatures around 26 K. Weak Meissner signals were observed for these films at temperatures below 30 K.

scholarly journals Synthesis and Characterization of Cu2ZnSnS4 Thin Films Obtained by Combined Magnetron Sputtering and Pulsed Laser Deposition

Nanomaterials ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 2403
Author(s):  
Mohamed-Yassine Zaki ◽  
Florinel Sava ◽  
Angel-Theodor Buruiana ◽  
Iosif-Daniel Simandan ◽  
Nicu Becherescu ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Stoichiometric Composition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Synthesis And Characterization ◽  
X Ray

Cu2ZnSnS4 (CZTS) is a complex quaternary material, and obtaining a single-phase CZTS with no secondary phases is known to be challenging and dependent on the production technique. This work involves the synthesis and characterization of CZTS absorber layers for solar cells. Thin films were deposited on Si and glass substrates by a combined magnetron sputtering (MS) and pulsed laser deposition (PLD) hybrid system, followed by annealing without and with sulfur powder at 500 °C under argon (Ar) flow. Three different Cu2S, SnS2, and ZnS targets were used each time, employing a different target for PLD and the two others for MS. The effect of the different target arrangements and the role of annealing and/or sulfurization treatment were investigated. The characterization of the absorber films was performed by grazing incidence X-ray diffraction (GIXRD), X-ray reflectometry (XRR), Raman spectroscopy, scanning electron microscopy, and regular transmission spectroscopy. The film with ZnS deposited by PLD and SnS2 and Cu2S by MS was found to be the best for obtaining a single CZTS phase, with uniform surface morphology, a nearly stoichiometric composition, and an optimal band gap of 1.40 eV. These results show that a new method that combines the advantages of both MS and PLD techniques was successfully used to obtain single-phase Cu2ZnSnS4 films for solar cell applications.

scholarly journals Yttria-stabilized zirconia thin films deposited by pulsed-laser deposition and magnetron sputtering

2011 ◽  
Vol 205 (19) ◽  
pp. 4495-4499 ◽  
Author(s):  
H. Hidalgo ◽  
E. Reguzina ◽  
E. Millon ◽  
A.-L. Thomann ◽  
J. Mathias ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Yttria Stabilized Zirconia ◽  
Laser Deposition ◽  
Stabilized Zirconia

Preparation of (001)-oriented PZT thin films on silicon wafers using pulsed laser deposition

2001 ◽  
Vol 225 (2-4) ◽  
pp. 173-177 ◽  
Author(s):  
Jing Zhao ◽  
Li Lu ◽  
C.V. Thompson ◽  
Y.F. Lu ◽  
W.D. Song
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Silicon Wafers ◽  
Laser Deposition ◽  
Pzt Thin Films

Pulsed laser deposition of PbMg1/3Nb2/3O3 thin films and PbMg1/3Nb2/3O3/PbTiO3 multilayers

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-65-Pr11-69
Author(s):  
N. Lemée ◽  
H. Bouyanfif ◽  
J. L. Dellis ◽  
M. El Marssi ◽  
M. G. Karkut ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition

SrBi2Nb2O9 ferroelectric thin films deposited by pulsed laser deposition on textured and epitaxied platinum electrodes

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-133-Pr11-137
Author(s):  
J. R. Duclère ◽  
M. Guilloux-Viry ◽  
A. Perrin ◽  
A. Dauscher ◽  
S. Weber ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Platinum Electrodes

Microstructural and Electrical Characterization of Barium Strontium Titanatebased Solid Solution Thin Films Deposited on Ceramic Substrates by Pulsed Laser Deposition

2002 ◽  
Vol 720 ◽  
Author(s):  
Costas G. Fountzoulas ◽  
Daniel M. Potrepka ◽  
Steven C. Tidrow
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Electrical Characterization ◽  
Field Variable ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Ceramic Substrates ◽  
Nominal Thickness

AbstractFerroelectrics are multicomponent materials with a wealth of interesting and useful properties, such as piezoelectricity. The dielectric constant of the BSTO ferroelectrics can be changed by applying an electric field. Variable dielectric constant results in a change in phase velocity in the device allowing it to be tuned in real time for a particular application. The microstructure of the film influences the electronic properties which in turn influences the performance of the film. Ba0.6Sr0.4Ti1-y(A 3+, B5+)yO3 thin films, of nominal thickness of 0.65 μm, were synthesized initially at substrate temperatures of 400°C, and subsequently annealed to 750°C, on LaAlO3 (100) substrates, previously coated with LaSrCoO conductive buffer layer, using the pulsed laser deposition technique. The microstructural and physical characteristics of the postannealed thin films have been studied using x-ray diffraction, scanning electron microscopy, and nano indentation and are reported. Results of capacitance measurements are used to obtain dielectric constant and tunability in the paraelectric (T>Tc) regime.

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