Low-Temperature Growth of p-Type ZnO Thin Films via Plasma-Assisted MOCVD

2007 ◽  
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pp. 295-297 ◽  
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Z.-Z. Ye ◽  
Y.-J. Zeng ◽  
H.-P. He ◽  
L.-P. Zhu ◽  
...  
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pp. 2880-2883 ◽  
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E. Guziewicz ◽  
M. Godlewski ◽  
K. Kopalko ◽  
I. A. Kowalik ◽  
S. Yatsunenko ◽  
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pp. 12274 ◽  
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Kyung-Sik Shin ◽  
Hye-Jeong Park ◽  
Brijesh Kumar ◽  
Kyoung-Kook Kim ◽  
Soo-Ghang Ihn ◽  
...  

2021 ◽  
Author(s):  
Fred Robinson ◽  
Daniel W. Newbrook ◽  
Peter Curran ◽  
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Duncan Hardie ◽  
...  

[nBu3Sn(TenBu)] is an effective precursor for the low temperature growth of continuous SnTe thin films by low pressure CVD; temperature-dependent thermoelectric characterisation of these p-type films is reported.


2007 ◽  
Vol 50 (6) ◽  
pp. 1716 ◽  
Author(s):  
E. H. Kim ◽  
D. H. Lee ◽  
B. H. Chung ◽  
H. S. Kim ◽  
Y. Kim ◽  
...  

2021 ◽  
Vol 26 ◽  
pp. 102050
Author(s):  
Mehdi Dehghani ◽  
Ershad Parvazian ◽  
Nastaran Alamgir Tehrani ◽  
Nima Taghavinia ◽  
Mahmoud Samadpour

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