Classical ion-grain scattering in plasmas: Image force correction

2017 ◽  
Vol 58 (2-3) ◽  
pp. 198-202
Author(s):  
N.Kh. Bastykova ◽  
S.K. Kodanova ◽  
T.S. Ramazanov ◽  
Zh.A. Moldabekov
Keyword(s):  
Image Force ◽  
Grain Scattering

Metal Contacts on a-GaN

1996 ◽  
Vol 1 ◽  
Author(s):  
T. U. Kampen ◽  
W. Mönch
Keyword(s):  
Tight Binding ◽  
Image Force ◽  
Schottky Contacts ◽  
Metal Contacts ◽  
Zero Bias ◽  
Barrier Heights ◽  
Current Voltage ◽  
Optical Dielectric Constant ◽  
Optical Dielectric ◽  
Gap States

The Schottky barrier heights of silver and lead contacts on n-type GaN (0001) epilayers were determined from current-voltage characteristics. The zero-bias barrier heights and the ideality factors were found to be linearly correlated. Similar observations were previously reported for metal contacts on Si (111) and GaAs (110) surfaces. The barrier heights of ideal Schottky contacts are characterized by image force lowering of the barrier only. This gives an ideality factor of 1.01. From our data we obtain barrier heights of 0.82 eV and 0.73eV for ideal Ag and Pb contacts on GaN, respectively. The metal-induced gap states (MIGS) model predicts the barrier heights of ideal Schottky contacts on a given semiconductor to be linearly correlated with the electronegativities of the metals. The two important parameters of this MIGS-and-electronegativity model are the charge neutrality level (CNL) of the MIGS and a slope parameter. The CNL may be calculated from the dielectric band gap and using the empirical tight-binding method. The slope parameters are given by the optical dielectric constant of the respective semiconductor. The predictions of the MIGS model for metal/GaN contacts are confirmed by the results presented here and by barrier heights previously reported by others for Au, Ti, Pt, and Pd contacts on GaN.

scholarly journals Ratsnake: A Versatile Image Annotation Tool with Application to Computer-Aided Diagnosis

2014 ◽  
Vol 2014 ◽  
pp. 1-12 ◽  
Author(s):  
D. K. Iakovidis ◽  
T. Goudas ◽  
C. Smailis ◽  
I. Maglogiannis
Keyword(s):  
Kidney Biopsy ◽  
Image Annotation ◽  
Image Force ◽  
Computer Aided Diagnosis ◽  
Image Features ◽  
Obstructive Nephropathy ◽  
Common Disease ◽  
Annotation Tool ◽  
Computer Aided ◽  
Aided Diagnosis

Image segmentation and annotation are key components of image-based medical computer-aided diagnosis (CAD) systems. In this paper we present Ratsnake, a publicly available generic image annotation tool providing annotation efficiency, semantic awareness, versatility, and extensibility, features that can be exploited to transform it into an effective CAD system. In order to demonstrate this unique capability, we present its novel application for the evaluation and quantification of salient objects and structures of interest in kidney biopsy images. Accurate annotation identifying and quantifying such structures in microscopy images can provide an estimation of pathogenesis in obstructive nephropathy, which is a rather common disease with severe implication in children and infants. However a tool for detecting and quantifying the disease is not yet available. A machine learning-based approach, which utilizes prior domain knowledge and textural image features, is considered for the generation of an image force field customizing the presented tool for automatic evaluation of kidney biopsy images. The experimental evaluation of the proposed application of Ratsnake demonstrates its efficiency and effectiveness and promises its wide applicability across a variety of medical imaging domains.

Image force effects on carrier collection ina‐Si:H solar cells

1981 ◽  
Vol 39 (4) ◽  
pp. 325-327 ◽  
Author(s):  
Min‐Koo Han ◽  
Wayne A. Anderson ◽  
R. Lahri ◽  
John Coleman
Keyword(s):  
Solar Cells ◽  
Image Force ◽  
Carrier Collection

A Piezoelectric Screw Dislocation Interacting with a Dielectric Crack in a Hexagonal Piezoelectric Material

2005 ◽  
Vol 9 ◽  
pp. 183-190
Author(s):  
Jin Xi Liu ◽  
X.L. Liu
Keyword(s):  
Electric Field ◽  
Screw Dislocation ◽  
Electric Displacement ◽  
Image Force ◽  
Mapping Method ◽  
Piezoelectric Medium ◽  
Intensity Factors ◽  
Potential Jump ◽  
Piezoelectric Screw Dislocation ◽  
Dielectric Crack

This paper is concerned with the interaction of a piezoelectric screw dislocation with a semi-infinite dielectric crack in a piezoelectric medium with hexagonal symmetry. The solution of the considered problem is obtained from the dislocation solution of a piezoelectric half-plane adjoining a gas medium of dielectric constant ε0 by using the conformal mapping method. The intensity factors of stress, electric displacement and electric field and the image force on the dislocation are given explicitly. The effect of electric boundary conditions on the dislocation-crack interaction is analyzed and discussed in detail. The results show that ε0 only influences the electric displacement and electric field intensity factors and the image force produced by the electric potential jump.

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