The Influence of Dynamical Screening on the Transport Properties of Dense Plasmas

2013 ◽  
Vol 53 (9) ◽  
pp. 639-652 ◽  
Author(s):  
V. S. Karakhtanov ◽  
R. Redmer ◽  
H. Reinholz ◽  
G. Röpke
Keyword(s):  
Transport Properties ◽  
Dense Plasmas ◽  
Dynamical Screening

Transport Properties of Dense Plasmas

1984 ◽  
Author(s):  
W. Ebeling ◽  
V. E. Fortov ◽  
Yu. L. Klimontovich ◽  
N. P. Kovalenko ◽  
W. D. Kraeft ◽  
...  
Keyword(s):  
Transport Properties ◽  
Dense Plasmas

OPTICAL AND TRANSPORT PROPERTIES IN DENSE PLASMAS COLLISION FREQUENCY FROM BULK TO CLUSTER

2008 ◽  
Vol 22 (25n26) ◽  
pp. 4627-4641 ◽  
Author(s):  
H. REINHOLZ ◽  
T. RAITZA ◽  
G. RÖPKE ◽  
I. V. MOROZOV
Keyword(s):  
Transport Properties ◽  
Correlation Functions ◽  
Collision Frequency ◽  
Md Simulations ◽  
Linear Response Theory ◽  
Thomson Scattering ◽  
Time Correlation ◽  
Dense Plasmas ◽  
The Laplace Transform ◽  
Cluster Properties

The dielectric function of dense plasmas is treated within a many-particle linear response theory beyond the RPA. In the long-wavelength limit, the dynamical collision frequency can be introduced which is expressed in terms of momentum and force auto-correlation functions (ACF). Analytical expressions for the collision frequency are considered for bulk plasmas, and reasonable agreement with MD simulations is found. Different applications such as Thomson scattering, reflectivity, electric and magnetic transport properties are discussed. In particular, experimental results for the static conductivity of inert gas plasmas are now well described. The transition from bulk properties to finite cluster properties is of particular interest. Within semiclassical MD simulations, single-time characteristics as well as two-time correlation functions are evaluated and analyzed. In particular, the Laplace transform of current and force ACFs show typical structures which are interpreted as collective modes of the microplasma. The damping rates of these modes are size dependent. They increase for the transition from small clusters to bulk plasmas.

Dynamical screening effects on rate coefficients for dense plasmas

1997 ◽  
Vol 58 (4-6) ◽  
pp. 501-508 ◽  
Author(s):  
Th. Bornath ◽  
M. Schlanges ◽  
F. Morales ◽  
R. Prenzel
Keyword(s):  
Rate Coefficients ◽  
Dense Plasmas ◽  
Dynamical Screening

Dielectronic Recombination in the Average-Atom Model

1988 ◽  
Vol 102 ◽  
pp. 215
Author(s):  
R.M. More ◽  
G.B. Zimmerman ◽  
Z. Zinamon
Keyword(s):  
Detailed Balance ◽  
Systematic Errors ◽  
Dielectronic Recombination ◽  
Rate Equations ◽  
Strong Correlations ◽  
Dense Plasmas ◽  
Atom Model ◽  
New Feature ◽  
Average Atom Model ◽  
Attachment Process

Autoionization and dielectronic attachment are usually omitted from rate equations for the non–LTE average–atom model, causing systematic errors in predicted ionization states and electronic populations for atoms in hot dense plasmas produced by laser irradiation of solid targets. We formulate a method by which dielectronic recombination can be included in average–atom calculations without conflict with the principle of detailed balance. The essential new feature in this extended average atom model is a treatment of strong correlations of electron populations induced by the dielectronic attachment process.

Spectroscopic Diagnostics of Tokamaks

1988 ◽  
Vol 102 ◽  
pp. 165-174
Author(s):  
C. de Michelis
Keyword(s):  
Transport Properties ◽  
Power Losses ◽  
Spectroscopic Diagnostics ◽  
Important Concern

AbstractImpurities being an important concern in tokamaks, spectroscopy plays a key role in their understanding. Techniques for the evaluation of concentrations, power losses and transport properties are surveyed, and a few developments are outlined.

Structure and Orientation of As Precipitates in LT-MBE Grown GaAs

1991 ◽  
Vol 49 ◽  
pp. 900-901 ◽  
Author(s):  
Alain Claverie ◽  
Zuzanna Liliental-Weber
Keyword(s):  
Transport Properties ◽  
Layer Thickness ◽  
Growth Temperature ◽  
Low Temperatures ◽  
Lattice Parameter ◽  
Crystalline Quality ◽  
Insulating Properties ◽  
Lt Gaas

GaAs layers grown by MBE at low temperatures (in the 200°C range, LT-GaAs) have been reported to have very interesting electronic and transport properties. Previous studies have shown that, before annealing, the crystalline quality of the layers is related to the growth temperature. Lowering the temperature or increasing the layer thickness generally results in some columnar polycrystalline growth. For the best “temperature-thickness” combinations, the layers may be very As rich (up to 1.25%) resulting in an up to 0.15% increase of the lattice parameter, consistent with the excess As. Only after annealing are the technologically important semi-insulating properties of these layers observed. When annealed in As atmosphere at about 600°C a decrease of the lattice parameter to the substrate value is observed. TEM studies show formation of precipitates which are supposed to be As related since the average As concentration remains almost unchanged upon annealing.

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