Study on circuit modeling of stretchable serpentine interconnects

2021 ◽  
Author(s):  
Zhenyu Wu ◽  
Chaoqun Peng ◽  
Jiao Liao ◽  
Quanxiu Chen
Keyword(s):  
Circuit Modeling

scholarly journals Equivalent Circuit Modeling of a Dual-Gate Graphene FET

Electronics ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 63
Author(s):  
Saima Hasan ◽  
Abbas Z. Kouzani ◽  
M A Parvez Mahmud
Keyword(s):  
Equivalent Circuit ◽  
Gate Voltage ◽  
Voltage Dependence ◽  
Drain Current ◽  
Bilayer Graphene ◽  
Circuit Modeling ◽  
Equivalent Circuit Modeling ◽  
Dual Gate ◽  
Source Voltage ◽  
Transit Frequency

This paper presents a simple and comprehensive model of a dual-gate graphene field effect transistor (FET). The quantum capacitance and surface potential dependence on the top-gate-to-source voltage were studied for monolayer and bilayer graphene channel by using equivalent circuit modeling. Additionally, the closed-form analytical equations for the drain current and drain-to-source voltage dependence on the drain current were investigated. The distribution of drain current with voltages in three regions (triode, unipolar saturation, and ambipolar) was plotted. The modeling results exhibited better output characteristics, transfer function, and transconductance behavior for GFET compared to FETs. The transconductance estimation as a function of gate voltage for different drain-to-source voltages depicted a proportional relationship; however, with the increase of gate voltage this value tended to decline. In the case of transit frequency response, a decrease in channel length resulted in an increase in transit frequency. The threshold voltage dependence on back-gate-source voltage for different dielectrics demonstrated an inverse relationship between the two. The analytical expressions and their implementation through graphical representation for a bilayer graphene channel will be extended to a multilayer channel in the future to improve the device performance.

scholarly journals Electron-Phonon Coupling Parameter of Ferromagnetic Metal Fe and Co

Materials ◽  
2021 ◽  
Vol 14 (11) ◽  
pp. 2755
Author(s):  
Kyuhwe Kang ◽  
Gyung-Min Choi
Keyword(s):  
Coupling Parameter ◽  
Critical Role ◽  
Circuit Modeling ◽  
Metallic Materials ◽  
Phonon Coupling ◽  
Electron Phonon Coupling ◽  
Complicated Process ◽  
G Value ◽  
Non Equilibrium

The electron-phonon coupling (g) parameter plays a critical role in the ultrafast transport of heat, charge, and spin in metallic materials. However, the exact determination of the g parameter is challenging because of the complicated process during the non-equilibrium state. In this study, we investigate the g parameters of ferromagnetic 3d transition metal (FM) layers, Fe and Co, using time-domain thermoreflectance. We measure a transient increase in temperature of Au in an FM/Au bilayer; the Au layer efficiently detects the strong heat flow during the non-equilibrium between electrons and phonons in FM. The g parameter of the FM is determined by analyzing the temperature dynamics using thermal circuit modeling. The determined g values are 8.8–9.4 × 1017 W m−3 K−1 for Fe and 9.6–12.2 × 1017 W m−3 K−1 for Co. Our results demonstrate that all 3d transition FMs have a similar g value, in the order of 1018 W m−3 K−1.

Integrated interconnect circuit modeling for VLSI design

2002 ◽  
Author(s):  
Won-Young Jung ◽  
Ghun-Up Cha ◽  
Young-Bae Kim ◽  
Jun-Ho Baek ◽  
Choon-Kyung Kim
Keyword(s):  
Vlsi Design ◽  
Circuit Modeling
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