Performance evaluation of GNRFET and TMDFET devices in static random access memory cells design

2021 ◽  
Author(s):  
Erfan Abbasian ◽  
Morteza Gholipour ◽  
Farzaneh Izadinasab
Keyword(s):  
Performance Evaluation ◽  
Random Access ◽  
Random Access Memory ◽  
Static Random Access Memory ◽  
Memory Cells ◽  
Access Memory

Parallel programmable nonvolatile memory using ordinary static random access memory cells

2017 ◽  
Vol 56 (4S) ◽  
pp. 04CD17 ◽  
Author(s):  
Tomoko Mizutani ◽  
Kiyoshi Takeuchi ◽  
Takuya Saraya ◽  
Hirofumi Shinohara ◽  
Masaharu Kobayashi ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Random Access ◽  
Random Access Memory ◽  
Static Random Access Memory ◽  
Memory Cells ◽  
Access Memory

scholarly journals Trap-Related Reliability Problems of Dielectrics in Memory Cells

Electronics ◽  
2021 ◽  
Vol 10 (11) ◽  
pp. 1287
Author(s):  
Hiroshi Watanabe ◽  
Hsin-Jyun Lin
Keyword(s):  
Magnetic Properties ◽  
Random Access ◽  
Random Access Memory ◽  
Product Yield ◽  
Basic Mechanism ◽  
Static Random Access Memory ◽  
Electronic Charge ◽  
Memory Cells ◽  
Nand Flash ◽  
Access Memory

A basic mechanism for storing data in memory cells is to record changes in electronic charges, material phases, resistivities, magnetic properties, and so forth. The change in electronic charge has been widely used in the majority of mass-produced memories, such as dynamic random-access memory (DRAM), static random-access memory (SRAM), NOR Flash, and NAND Flash. Other emerging memories have collected widespread attention for acquiring extra advantages which cannot be achieved using the change in electronic charge. Many years of studies have told us that reliability problems are critically important in the development of both conventional and emerging memories, in order to improve the product yield. However, the topics related to these problems are too wide to cover in these limited pages. In this review chapter, we address several interesting examples of trap-related problems in dielectrics for use in various memory cells. For engineering purposes, it is very important to grasp the relation of the achieved physical intuitions and electronic characteristics of dielectrics.

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