Electrochemical Exchange Reaction Mechanism and the Role of Additive Water to Stabilize the Structure of VOPO 4 ⋅2 H 2 O as a Cathode Material for Potassium‐Ion Batteries

ChemSusChem ◽  
2019 ◽  
Vol 12 (5) ◽  
pp. 1069-1075 ◽  
Author(s):  
Jooeun Hyoung ◽  
Jongwook W. Heo ◽  
Munseok S. Chae ◽  
Seung‐Tae Hong
Keyword(s):  
Reaction Mechanism ◽  
Cathode Material ◽  
Exchange Reaction ◽  
Potassium Ion

O3-Type NaCrO2 as a Superior Cathode Material for Sodium/Potassium-Ion Batteries Ensured by High Structural Reversibility

2021 ◽  
Author(s):  
Jinji Liang ◽  
Liying Liu ◽  
Xiangsi Liu ◽  
Xiangcong Meng ◽  
Linyong Zeng ◽  
...  
Keyword(s):  
Cathode Material ◽  
Potassium Ion ◽  
Sodium Potassium

Unveiling the role of Mn-interstitial defect and particle size on the Jahn-Teller distortion of the LiMn2O4 cathode material

2021 ◽  
Vol 490 ◽  
pp. 229519
Author(s):  
Renier Arabolla Rodríguez ◽  
Nelcy Della Santina Mohallem ◽  
Manuel Avila Santos ◽  
Demetrio A. Sena Costa ◽  
Luciano Andrey Montoro ◽  
...  
Keyword(s):  
Particle Size ◽  
Cathode Material ◽  
Teller Distortion ◽  
Interstitial Defect ◽  
Jahn Teller ◽  
Limn2o4 Cathode ◽  
Jahn Teller Distortion

Oxidations ofNω-Hydroxyarginine Analogues and VariousN-Hydroxyguanidines by NO Synthase II: Key Role of Tetrahydrobiopterin in the Reaction Mechanism and Substrate Selectivity

2001 ◽  
Vol 14 (2) ◽  
pp. 202-210 ◽  
Author(s):  
Catherine Moali ◽  
Jean-Luc Boucher ◽  
Axelle Renodon-Corniere ◽  
Dennis J. Stuehr ◽  
Daniel Mansuy
Keyword(s):  
Reaction Mechanism ◽  
No Synthase ◽  
Substrate Selectivity

Reaction Mechanism and Role of the Support in the Partial Oxidation of Methane on Rh/Al2O3

1996 ◽  
Vol 159 (2) ◽  
pp. 418-426 ◽  
Author(s):  
Dezheng Wang ◽  
Olivier Dewaele ◽  
Ann M.De Groote ◽  
Gilbert F. Froment
Keyword(s):  
Reaction Mechanism ◽  
Partial Oxidation ◽  
Partial Oxidation Of Methane ◽  
Oxidation Of Methane

From the Understanding of the Reaction Mechanism Towards Optimizing the Deposition Rate and Optoelectronic Properties of a-Si:H

1989 ◽  
Vol 149 ◽  
Author(s):  
S. Veprek ◽  
M. Heintze ◽  
R. Bayer ◽  
N. Jurčik-Rajman
Keyword(s):  
Reaction Mechanism ◽  
Surface Coverage ◽  
Kinetic Studies ◽  
Reactive Intermediates ◽  
Sticking Coefficient ◽  
High Quality ◽  
Rate Determining Step ◽  
Homogeneous Good ◽  
Good Agreement

ABSTRACTWe present new results of kinetic studies of the deposition of high quality a-Si:H which strongly support the reaction mechanism suggested in our earlier papers: 1. SiH4 → SiH2; 2. SiH2 + SiS4 → Si2H6 (SiH2 + Si2H6 → Si3H6); 3. Si2H6 → 2a-Si:H (Si3H8 → 3a-Si:H). The “SiH3 mechanism”, as promoted by several workers, is in contradiction with these experimental facts.The di- and trisilane, which have a much higher reactive sticking coefficient than monosilane, play the role of reactive intermediates which facilitate the heterogeneous decomposition of silicon carrying species at the surface of the growing film. The values of the reactive sticking coefficient of Si2H6 and Si3H8 depend on the surface coverage by chemisorbed hydrogen; they increase with decreasing surface coverage. Under the conditions of the growth of high quality a-Si:H films the reactive sticking coefficient of disilane amounts to 10−4 to 10−2 which is in a good agreement with recent data of other authors.The rate determining step of the growth of high quality a-Si:H films is the desorption of hydrogen from the surface of the growing film. This can be strongly enhanced by ion bombardment at impact energy of <100 eV. In this way, homogeneous, good quality films were deposited at rates up to 1800 Angströms/min, and there is a well justified hope that this rate can be further increased.

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