Influence of impurity band conduction on the electrical characteristics of p-type GaAs

1988 ◽  
Vol 23 (10-11) ◽  
pp. 1377-1383 ◽  
Author(s):  
H. Neumann
Keyword(s):  
Impurity Band ◽  
Electrical Characteristics ◽  
P Type ◽  
Band Conduction

Effect of impurity band conduction on the electrical characteristics ofn-type CuInSe2

2001 ◽  
Vol 90 (8) ◽  
pp. 3993-3997 ◽  
Author(s):  
L. Essaleh ◽  
S. M. Wasim ◽  
J. Galibert
Keyword(s):  
Impurity Band ◽  
Electrical Characteristics ◽  
Band Conduction

Negligible carrier freeze-out facilitated by impurity band conduction in highly p-type GaN

2012 ◽  
Vol 101 (8) ◽  
pp. 082106 ◽  
Author(s):  
Brendan Gunning ◽  
Jonathan Lowder ◽  
Michael Moseley ◽  
W. Alan Doolittle
Keyword(s):  
Impurity Band ◽  
P Type ◽  
Band Conduction ◽  
Freeze Out

Impurity band conduction in Mn-doped p type InAs single crystal

2018 ◽  
Vol 84 ◽  
pp. 115-118 ◽  
Author(s):  
Guiying Shen ◽  
Youwen Zhao ◽  
Yongbiao Bai ◽  
Ding Yu ◽  
Jingming Liu ◽  
...  
Keyword(s):  
Single Crystal ◽  
Impurity Band ◽  
P Type ◽  
Mn Doped ◽  
Band Conduction

The effect of static and modulated uniaxial constraint on impurity band conduction in p-type germanium

1982 ◽  
Vol 60 (1) ◽  
pp. 102-108
Author(s):  
B. A. Lombos ◽  
M. Averous ◽  
C. Fau ◽  
J. Calas ◽  
S. Charar
Keyword(s):  
Fermi Level ◽  
Transport Properties ◽  
Impurity Band ◽  
Uniaxial Stress ◽  
Concentration Region ◽  
Metallic Conduction ◽  
Region 10 ◽  
P Type ◽  
Intermediate Concentration ◽  
Band Conduction

Transport property measurements on p-type germanium, doped to be in the intermediate concentration region (1016 < NA < 1018 cm−3), were performed in the temperature range of 1.6–77 K under static (up to 337 MPa) and modulated (2.4 on 180 MPa) uniaxial compression. To elucidate the conduction mechanisms in this region the position of the Fermi level is calculated as a function of temperature and uniaxial stress and correlated to the variation of the measured transport properties. The analyses indicate an Anderson type metallic conduction, characteristic of random, amorphous systems, while the Fermi level is in the impurity band. Mott type metallic conduction, characteristic to periodic systems, determines the transport properties as the Fermi level moves out of the impurity band.

Doping of p-type ZnSb: Single parabolic band model and impurity band conduction

2011 ◽  
Vol 208 (12) ◽  
pp. 2753-2759 ◽  
Author(s):  
P. H. Michael Böttger ◽  
Gregory S. Pomrehn ◽  
G. Jeffrey Snyder ◽  
Terje G. Finstad
Keyword(s):  
Impurity Band ◽  
Band Model ◽  
P Type ◽  
Band Conduction

Impurity band conduction in single crystals of p-type GaSb

1983 ◽  
Vol 117 (1) ◽  
pp. 407-416
Author(s):  
K. D. Chaudhuri ◽  
Anita Malik ◽  
Sunita Kukreti ◽  
P. C. Mathur
Keyword(s):  
Single Crystals ◽  
Impurity Band ◽  
P Type ◽  
Band Conduction

Raman and magneto transport studies of MBE grown β-FeSi2, β-(Fe1-xCrx)Si2, and β-(Fe1-xCox)Si2

2002 ◽  
Vol 744 ◽  
Author(s):  
A. Srujana ◽  
A. Wadhawan ◽  
K. Srikala ◽  
B.P. Gorman ◽  
R.J. Cottier ◽  
...  
Keyword(s):  
Impurity Band ◽  
Great Promise ◽  
Temperature Dependent ◽  
Iron Disilicide ◽  
Free Carriers ◽  
Transport Studies ◽  
Light Emitter ◽  
P Type ◽  
Silicon Based ◽  
Band Conduction

ABSTRACTIron disilicide shows great promise as a silicon based light emitter operating in the 1.3 to 1.5 μm wavelength range. However, there exists a number of questions related to the band structure and the ability to alloy and controllably dope the material both n and p type. In this paper we present Raman and magneto transport studies on β-FeSi2, β-(Fe1-xCrx)Si2, and β-(Fe1-xCox)Si2 grown by MBE. By comparing the spectra obtained for undoped and doped samples we provide a general overview of the effects of doping on the crystallinity of the material. The temperature dependent (4K<T<300K) magneto transport illustrates that Cr is a p-type dopant and Co is an n-type dopant in β-FeSi2.The temperature dependence of the resistivity indicates that the transport properties at higher temperatures are determined by free carriers whereas at lower temperatures impurity band conduction prevails.

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