Model mechanisms in Kikuchi pattern formation from crystals

2017 ◽  
Vol 52 (4) ◽  
pp. 1600288 ◽  
Author(s):  
Aimo Winkelmann
Keyword(s):  
Pattern Formation ◽  
Kikuchi Pattern

A very rapid in situ Kikuchi technique to determine relative crystal misorientation

1988 ◽  
Vol 46 ◽  
pp. 830-831
Author(s):  
J. I. Bennetch
Keyword(s):  
Electron Beam ◽  
Analytical Techniques ◽  
Superplastic Forming ◽  
The Other ◽  
Kikuchi Pattern ◽  
Kikuchi Line ◽  
Line Analysis

In a recent study of the superplastic forming (SPF) behavior of certain Al-Li-X alloys, the relative misorientation between adjacent (sub)grains proved to be an important parameter. It is well established that the most accurate way to determine misorientation across boundaries is by Kikuchi line analysis. However, the SPF study required the characterization of a large number of (sub)grains in each sample to be statistically meaningful, a very time-consuming task even for comparatively rapid Kikuchi analytical techniques.In order to circumvent this problem, an alternate, even more rapid in-situ Kikuchi technique was devised, eliminating the need for the developing of negatives and any subsequent measurements on photographic plates. All that is required is a double tilt low backlash goniometer capable of tilting ± 45° in one axis and ± 30° in the other axis. The procedure is as follows. While viewing the microscope screen, one merely tilts the specimen until a standard recognizable reference Kikuchi pattern is centered, making sure, at the same time, that the focused electron beam remains on the (sub)grain in question.

Dissociated Σ=27 boundaries in silicon

1988 ◽  
Vol 46 ◽  
pp. 624-625
Author(s):  
A. Garg ◽  
W.A.T. Clark ◽  
J.P. Hirth
Keyword(s):  
Electron Diffraction ◽  
Local Minimum ◽  
Boundary Energy ◽  
Coincidence Site Lattice ◽  
Boundary Plane ◽  
Low Energy ◽  
Theoretical Understanding ◽  
Site Lattice ◽  
Kikuchi Pattern ◽  
Analysis Techniques

In the last twenty years, a significant amount of work has been done in the theoretical understanding of grain boundaries. The various proposed grain boundary models suggest the existence of coincidence site lattice (CSL) boundaries at specific misorientations where a periodic structure representing a local minimum of energy exists between the two crystals. In general, the boundary energy depends not only upon the density of CSL sites but also upon the boundary plane, so that different facets of the same boundary have different energy. Here we describe TEM observations of the dissociation of a Σ=27 boundary in silicon in order to reduce its surface energy and attain a low energy configuration.The boundary was identified as near CSL Σ=27 {255} having a misorientation of (38.7±0.2)°/[011] by standard Kikuchi pattern, electron diffraction and trace analysis techniques. Although the boundary appeared planar, in the TEM it was found to be dissociated in some regions into a Σ=3 {111} and a Σ=9 {122} boundary, as shown in Fig. 1.

Pattern formation in the splay Freedericks transition of a nematic side-group polysiloxane

1993 ◽  
Vol 3 (6) ◽  
pp. 865-889 ◽  
Author(s):  
Norbert Schwenk ◽  
Hans Wolfgang Spiess
Keyword(s):  
Pattern Formation ◽  
Side Group

Pattern Formation in Thin Polymer Films: A New Morphology

2000 ◽  
Vol 629 ◽  
Author(s):  
Jean-Loup Masson ◽  
Peter F. Green
Keyword(s):  
Growth Rate ◽  
Pattern Formation ◽  
Early Stage ◽  
Structural Evolution ◽  
Distinct Form ◽  
Thin Polymer Films ◽  
Intermediate Morphology ◽  
Thin Polymer ◽  
Nonwetting Liquid ◽  
Cylindrical Holes

ABSTRACTResearchers have shown that thin, nonwetting, liquid homopolymer films dewet substrates, forming patterns that reflect fluctuations in the local film thickness. These patterns have been shown to be either discrete cylindrical holes or bicontinuous “spinodal-like” patterns. In this paper we show the existence of a new morphology. During the early stage of dewetting, discrete highly asymmetric holes appear spontaneously throughout the film. The nucleation rate of these holes is faster than their growth rate. The morphology of the late stage of evolution, after 18 days, is characterized by a bicontinuous pattern, distinct form conventional spinodal dewetting patterns. This morphology has been observed for a range of film thicknesses between 7.5 and 21nm. The structural evolution of this intermediate morphology is discussed.

Pattern Formation Survey on Non Uniformly Forced Swift-Hohenberg Equation

2019 ◽  
Author(s):  
Daniel Coelho ◽  
José da Rocha Miranda Pontes ◽  
Norberto Mangiavacchi
Keyword(s):  
Pattern Formation
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