Three-dimensional study of the pressure field and advantages of hemispherical crucible in silicon Czochralski crystal growth
2010 ◽
Vol 45
(6)
◽
pp. 573-582
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2000 ◽
Vol 39
(Part 1, No. 2A)
◽
pp. 372-377
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Keyword(s):
2012 ◽
Vol 340
(1)
◽
pp. 135-141
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Keyword(s):
2010 ◽
Vol 312
(7)
◽
pp. 989-996
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2011 ◽
pp. 353-367
2006 ◽
Vol 35
(10)
◽
pp. 1400-1419
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Keyword(s):
2003 ◽
Vol 252
(4)
◽
pp. 538-549
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Keyword(s):
Keyword(s):
2002 ◽
Vol 240
(1-2)
◽
pp. 267-276
◽
Keyword(s):