Growth, morphological and structural characterization of silicon carbide epilayers for power electronic devices applications

2005 ◽  
Vol 40 (10-11) ◽  
pp. 964-966
Author(s):  
C. F. Pirri ◽  
S. Porro ◽  
S. Ferrero ◽  
E. Celasco ◽  
S. Guastella ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Structural Characterization ◽  
Electronic Devices ◽  
Power Electronic

scholarly journals ENHANCING POWER ELECTRONIC DEVICES WITH WIDE BANDGAP SEMICONDUCTORS

2006 ◽  
Vol 16 (02) ◽  
pp. 545-556 ◽  
Author(s):  
BURAK OZPINECI ◽  
MADHU SUDHAN CHINTHAVALI ◽  
LEON M. TOLBERT
Keyword(s):  
Silicon Carbide ◽  
Field Strength ◽  
Schottky Diodes ◽  
Electronic Devices ◽  
Wide Bandgap ◽  
Power Electronic ◽  
Different Temperatures ◽  
Bandgap Semiconductors ◽  
Switching Characteristics ◽  
Unipolar Devices

Silicon carbide ( SiC ) unipolar devices have much higher breakdown voltages than silicon ( Si ) unipolar devices because of the ten times greater electric field strength of SiC compared with Si . 4H - SiC unipolar devices have higher switching speeds due to the higher bulk mobility of 4H - SiC compared to other polytypes. In this paper, four commercially available SiC Schottky diodes with different voltage and current ratings, VJFET, and MOSFET samples have been tested to characterize their performance at different temperatures ranging from -50°C to 175°C. Their forward characteristics and switching characteristics in this temperature range are presented. The characteristics of the SiC Schottky diodes are compared with those of a Si pn diode with comparable ratings.

scholarly journals Impact of gamma-ray irradiation on dynamic characteristics of Si and SiC power MOSFETs

2019 ◽  
Vol 9 (2) ◽  
pp. 1453
Author(s):  
Ramani Kannan ◽  
Saranya Krishnamurthy ◽  
Chay Che Kiong ◽  
Taib B Ibrahim
Keyword(s):  
Silicon Carbide ◽  
Dynamic Characteristics ◽  
Gamma Ray ◽  
Electronic Devices ◽  
Dose Effect ◽  
Power Electronic ◽  
Switching Speed ◽  
Power Mosfet ◽  
Power Mosfets ◽  
Gamma Ray Irradiation

Power electronic devices in spacecraft and military applications requires high radiation tolerant. The semiconductor devices face the issue of device degradation due to their sensitivity to radiation. Power MOSFET is one of the primary components of these power electronic devices because of its capabilities of fast switching speed and low power consumption. These abilities are challenged by ionizing radiation which damages the devices by inducing charge built-up in the sensitive oxide layer of power MOSFET. Radiations degrade the oxides in a power MOSFET through Total Ionization Dose effect mechanism that creates defects by generation of excessive electron–hole pairs causing electrical characteristics shifts. This study investigates the impact of gamma ray irradiation on dynamic characteristics of silicon and silicon carbide power MOSFET. The switching speed is limit at the higher doses due to the increase capacitance in power MOSFETs. Thus, the power circuit may operate improper due to the switching speed has changed by increasing or decreasing capacitances in power MOSFETs. These defects are obtained due to the penetration of Cobalt60 gamma ray dose level from 50krad to 600krad. The irradiated devices were evaluated through its shifts in the capacitance-voltage characteristics, results were analyzed and plotted for the both silicon and silicon carbide power MOSFET.

Nano-Analytical and Electrical Characterization of 4H-SiC MOSFETs

2012 ◽  
Vol 711 ◽  
pp. 134-138 ◽  
Author(s):  
Ana Maria Beltran ◽  
Sylvie Schamm-Chardon ◽  
Vincent Mortet ◽  
Mathieu Lefebvre ◽  
Elena Bedel-Pereira ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Electronic Devices ◽  
Chemical Properties ◽  
Electrical Characterization ◽  
Power Electronic ◽  
Layer Formation ◽  
Transmission Electron ◽  
P Type ◽  
And Chemical Properties

4H-SiC presents great advantages for its use in power electronic devices working at particular conditions. However the development of MOSFETs based on this material is limited by mobility degradation. N-channel SiC MOSFETs were manufactured on p-type epitaxial and p-implanted substrates and the electron mobility in the inversion channels was measured to be correlated with their structural and chemical properties determined by transmission electron microscopy methods. With regard to what was previously discussed in the literature, transition layer formation and carbon distribution across the SiC-SiO2interface are considered in relation with the measured low electron mobility of the MOSFETS.

X-ray Topography Characterization of GaN Substrates Used for Power Electronic Devices

2021 ◽  
Author(s):  
Yafei Liu ◽  
Hongyu Peng ◽  
Tuerxun Ailihumaer ◽  
Balaji Raghothamachar ◽  
Michael Dudley
Keyword(s):  
Electronic Devices ◽  
Power Electronic ◽  
X Ray

Structural Characterization of Silicon Carbide Etched by Using a Combination of Ion Implantation and Wet Chemical Etching

2000 ◽  
Vol 338-342 ◽  
pp. 481-484 ◽  
Author(s):  
T. Henkel ◽  
Gabriel Ferro ◽  
Shin Ichi Nishizawa ◽  
H. Pressler ◽  
Yasuhito Tanaka ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Structural Characterization ◽  
Chemical Etching ◽  
Wet Chemical ◽  
Wet Chemical Etching

scholarly journals Modeling and Characterization of a Kinetic Energy Harvesting Device Based on Galfenol

Materials ◽  
2019 ◽  
Vol 12 (19) ◽  
pp. 3199 ◽  
Author(s):  
Carmine Stefano Clemente ◽  
Daniele Davino
Keyword(s):  
Energy Harvesting ◽  
Permanent Magnets ◽  
Electronic Devices ◽  
Power Electronic ◽  
Electrical Load ◽  
Circuit Simulator ◽  
Force Profile ◽  
Conversion Performance ◽  
Electrical Connections

The proposal of Energy Harvesting (EH) techniques and devices has experienced a significant growth over the last years, because of the spread of low power electronic devices. Small ambient energy quantities can be recovered through EH and exploited to power Wireless Sensor Networks (WSN) used, for example, for the Structural Health Monitoring (SHM) of bridges or viaducts. For this purpose, research on EH devices based on magnetostrictive materials has significantly grown in the last years. However, these devices comprise different parts, such as a mechanical system, magnetic circuit and electrical connections, which are coupled together. Then, a method able to reproduce the performance may be a handy tool. This paper presents a nonlinear equivalent circuit of a harvester, based on multiple rods of Galfenol, which can be solved with standard circuit simulator. The circuital parameters are identified with measurements both on one rod and on the whole device. The validation of the circuit and the analysis of the power conversion performance of the device have been conducted with different working conditions (force profile, typology of permanent magnets, resistive electrical load).

scholarly journals Micro- and nano-structural characterization of silicon carbide and related materials, for power devices, using TEM

2015 ◽  
Author(s):  
Ναρεντραράϊ Τσαντράν
Keyword(s):  
Silicon Carbide ◽  
Structural Characterization ◽  
Power Devices

Η παρούσα διατριβή πραγματεύεται τον Μικρο- και Νανο-δομικό χαρακτηρισμό του Ανθρακοπυριτίου (SiC) για ημιαγωγικές διατάξεις ισχύος, με τη χρήση Ηλεκτρονικής Μικροσκοπίας Διέλευσης (TEM).Πιο συγκεκριμένα, μελετάται η επιφάνεια και η ενδοεπιφάνεια του 4Η-SiC με προσμίξεις Ge. Διαπιστώνεται ότι σχηματίζονται νησίδες Ge στην επιφάνεια του SiC οι οποίες έχουν συγκεκριμένες σχέσεις προσανατολισμού του πλέγματος της νησίδος με αυτό του υποβάθρου, παρ’ όλη την πολύ μεγάλη πλεγματική τους διαφορά. Με τον συνδυασμό φασματοσκοπίας Raman και ανάλυσης XPS διαπιστώνεται η δημιουργία φυλλιδίων γραφενίου και γραφίτη, που σχηματίζονται από την χημική αντίδραση του Ge με την επιφάνεια του 4Η-SiC. Επιπλέον ένας λεπτομερής δομικός χαρακτηρισμός με τη χρήση ηλεκτρονικής μικροσκοπίας διέλευσης και τη συμβολή της φασματοσκοπίας Raman σε κρυστάλλους 15R-SiC απέδειξε ότι τα επίπεδα διδυμίας συνδέονται με την επιστοίβαση διπλών στρωμάτων Si-C του τύπου (22) ή/και (33), παράλληλα του επιπέδου (0001), όπως επίσης την διπλή κρυσταλλική φύση του υλικού με την σύγχρονη παρουσία 4H- και 15R-SiC μαζί με την σχετιζόμενη με παραμόρφωση σπάνια παρουσία 3C-SiC. Τέλος, οι τεχνικές STEM και EDS χρησιμοποιήθηκαν για την μελέτη της σύστασης και των διεργασιών διάχυσης των ωμικών επαφών Ti/Al/Ti/Au και Ti/Al/Mo/Au σε ετερο-επαφές GaN/AlGaN/GaN. Η μελέτη με τις τεχνικές STEM και EDS έδειξαν ότι η διάχυση στην επαφή με το Mo είναι μικρότερη σε σύγκριση με αυτή της επαφής με το Ti. Παρά το υψηλό σημείο τήξης του Mo, το οποίο δεν διαλύει τον χρυσό, το στρώμα του Mo δεν εμποδίζει τη διάχυση του Au και του Al στους 800ο C. Η μελέτη δεν έδειξε μεγάλες διαφορές στη σύσταση των ενώσεων, που σχηματίζονται και στις δύο περιπτώσεις μετά την ανόπτηση, η οποία εξηγεί την μικρή εξάρτηση της ωμικής αντίστασης της επαφής από το μεταλλικό στρώμα που χρησιμοποιείται.

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