The Selective Role of Long-Range Forces in the Stereodynamics of Ion-Molecule Reactions: The He+ +Methyl Formate Case From Guided-Ion-Beam Experiments

ChemPhysChem ◽  
2017 ◽  
Vol 19 (1) ◽  
pp. 51-59 ◽  
Author(s):  
Andrea Cernuto ◽  
Fernando Pirani ◽  
Luca Matteo Martini ◽  
Paolo Tosi ◽  
Daniela Ascenzi
1964 ◽  
Vol 42 (11) ◽  
pp. 2086-2101 ◽  
Author(s):  
William McGowan ◽  
Larkin Kerwin

The role of some excited ions in laboratory ion–molecule reactions has been investigated, and their possible importance in the upper atmosphere considered. The mass spectrometer techniques of Aston banding and of comparing I.P. curves of parent and product ions have been applied to studies of collision-induced dissociation and charge exchange of oxygen and nitrogen in their parent gas. In every case studied, cross sections depended markedly upon the presence in the ion beam of ions in metastable or long-lived radiative states. In order that an ion reach the collision region, it had to have a mean lifetime greater than 3 μsec.The a 4Πu and b 4Σg excited states of O2+ were identified in the collision[Formula: see text]Higher states of O2+, which have not as yet been identified spectroscopically, were found in the collision[Formula: see text]The thresholds of these new states are 23.9, 27.9, 31.3, and 34.1 eV with an uncertainty ±0.2 eV. From the collision-induced dissociation of N2+, the A 2Πu and the [Formula: see text] states have been identified. Also, the reported transfer of the ν = 3 level of the B [Formula: see text] to the ν = 14 level of the A 2Πu was found.The cross section for 10/01 charged exchange of N2+ in N2 exhibited a marked decrease as excited-state ions diluted the beam. The 10/01 collisions of N+ in N2 and O+ in O2 exhibited an increase in cross section as metastables were added to the parent ion beam. The 10/20 reaction of O2+ in O2 was also observed to depend on excited O2+ ions.


IUCrJ ◽  
2018 ◽  
Vol 5 (4) ◽  
pp. 470-477 ◽  
Author(s):  
Edoardo Martino ◽  
Alla Arakcheeva ◽  
Gabriel Autès ◽  
Andrea Pisoni ◽  
Maja D. Bachmann ◽  
...  

The high-pressure synthesis and incommensurately modulated structure are reported for the new compound Sr2Pt8−x As, with x = 0.715 (5). The structure consists of Sr2Pt3As layers alternating with Pt-only corrugated grids. Ab initio calculations predict a metallic character with a dominant role of the Pt d electrons. The electrical resistivity (ρ) and Seebeck coefficient confirm the metallic character, but surprisingly, ρ showed a near-flat temperature dependence. This observation fits the description of the Mooij correlation for electrical resistivity in disordered metals, originally developed for statistically distributed point defects. The discussed material has a long-range crystallographic order, but the high concentration of Pt vacancies, incommensurately ordered, strongly influences the electronic conduction properties. This result extends the range of validity of the Mooij correlation to long-range ordered incommensurately modulated vacancies. Motivated by the layered structure, the resistivity anisotropy was measured in a focused-ion-beam micro-fabricated well oriented single crystal. A low resistivity anisotropy indicates that the layers are electrically coupled and conduction channels along different directions are intermixed.


2013 ◽  
pp. 97-116 ◽  
Author(s):  
A. Apokin

The author compares several quantitative and qualitative approaches to forecasting to find appropriate methods to incorporate technological change in long-range forecasts of the world economy. A?number of long-run forecasts (with horizons over 10 years) for the world economy and national economies is reviewed to outline advantages and drawbacks for different ways to account for technological change. Various approaches based on their sensitivity to data quality and robustness to model misspecifications are compared and recommendations are offered on the choice of appropriate technique in long-run forecasts of the world economy in the presence of technological change.


2002 ◽  
Vol 719 ◽  
Author(s):  
Myoung-Woon Moon ◽  
Kyang-Ryel Lee ◽  
Jin-Won Chung ◽  
Kyu Hwan Oh

AbstractThe role of imperfections on the initiation and propagation of interface delaminations in compressed thin films has been analyzed using experiments with diamond-like carbon (DLC) films deposited onto glass substrates. The surface topologies and interface separations have been characterized by using the Atomic Force Microscope (AFM) and the Focused Ion Beam (FIB) imaging system. The lengths and amplitudes of numerous imperfections have been measured by AFM and the interface separations characterized on cross sections made with the FIB. Chemical analysis of several sites, performed using Auger Electron Spectroscopy (AES), has revealed the origin of the imperfections. The incidence of buckles has been correlated with the imperfection length.


2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Roman Sherrod ◽  
Eric C. O’Quinn ◽  
Igor M. Gussev ◽  
Cale Overstreet ◽  
Joerg Neuefeind ◽  
...  

AbstractThe structural response of Dy2TiO5 oxide under swift heavy ion irradiation (2.2 GeV Au ions) was studied over a range of structural length scales utilizing neutron total scattering experiments. Refinement of diffraction data confirms that the long-range orthorhombic structure is susceptible to ion beam-induced amorphization with limited crystalline fraction remaining after irradiation to 8 × 1012 ions/cm2. In contrast, the local atomic arrangement, examined through pair distribution function analysis, shows only subtle changes after irradiation and is still described best by the original orthorhombic structural model. A comparison to Dy2Ti2O7 pyrochlore oxide under the same irradiation conditions reveals a different behavior: while the dysprosium titanate pyrochlore is more radiation resistant over the long-range with smaller degree of amorphization as compared to Dy2TiO5, the former involves more local atomic rearrangements, best described by a pyrochlore-to-weberite-type transformation. These results highlight the importance of short-range and medium-range order analysis for a comprehensive description of radiation behavior.


1983 ◽  
Vol 23 ◽  
Author(s):  
G.J. Galvin ◽  
L.S. Hung ◽  
J.W. Mayer ◽  
M. Nastasi

ABSTRACTEnergetic ion beams used outside the traditional role of ion implantation are considered for semiconductor applications involving interface modification for self-aligned silicide contacts, composition modification for formation of buried oxide layers in Si on insulator structures and reduced disorder in high energy ion beam annealing for buried collectors in transistor fabrication. In metals, aside from their use in modification of the composition of near surface regions, energetic ion beams are being investigated for structural modification in crystalline to amorphous transitions. Pulsed beams of photons and electrons are used as directed energy sources in rapid solidification. Here, we consider the role of temperature gradients and impurities in epitaxial growth of silicon.


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