Physical Vapor Deposition of [EMIM][Tf2N]: A New Approach to the Modification of Surface Properties with Ultrathin Ionic Liquid Films

ChemPhysChem ◽  
2008 ◽  
Vol 9 (15) ◽  
pp. 2185-2190 ◽  
Author(s):  
Till Cremer ◽  
Manuela Killian ◽  
J. Michael Gottfried ◽  
Natalia Paape ◽  
Peter Wasserscheid ◽  
...  
Keyword(s):  
Ionic Liquid ◽  
Surface Properties ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Liquid Films ◽  
New Approach

Solar physical vapor deposition: A new approach for preparing magnesium titanate nanopowders

2013 ◽  
Vol 285 ◽  
pp. 49-55 ◽  
Author(s):  
Irina Apostol ◽  
K. Venkata Saravanan ◽  
Claude J.A. Monty ◽  
Paula M. Vilarinho
Keyword(s):  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Magnesium Titanate ◽  
New Approach

scholarly journals Properties of Bare and Thin-Film-Covered GaN(0001) Surfaces

Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 145
Author(s):  
Miłosz Grodzicki
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Properties ◽  
Vapor Deposition ◽  
Direct Contact ◽  
Physical Vapor Deposition ◽  
Metal Films ◽  
Surface Alloying ◽  
X Ray ◽  
Physical Vapor Deposition Method

In this paper, the surface properties of bare and film-covered gallium nitride (GaN) in wurtzite form, (0001) oriented, are summarized. Thin films of several elements—manganese, nickel, palladium, arsenic, and antimony—were formed by the physical vapor deposition method. The results of the bare surfaces, as well as the thin film/GaN(0001) phase boundaries presented, were characterized by X-ray and ultraviolet photoelectron spectroscopies (XPS, UPS). Basic information on the electronic properties of GaN(0001) surfaces are shown. Different behaviors of the thin films, after postdeposition annealing in ultrahigh vacuum conditions such as surface alloying and subsurface dissolving and desorbing, were found. The metal films formed surface alloys with gallium (MnGa, NiGa, PdGa), while the semimetal (As, Sb) layers easily evaporate from the GaN(0001) surface. However, the layer in direct contact with the substrate could react with it, modifying the surface properties of GaN(0001).

scholarly journals Processing of Spark Plasma Sintered Fe Alloy and Enhancing Its Surface Properties by AlCrN Monolayer Coating by Cathodic Arc Plasma Physical Vapor Deposition Process

Coatings ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1166
Author(s):  
T. Sampath Kumar ◽  
A. Raja Annamalai ◽  
Muthe Srikanth ◽  
Chun-Ping Jen
Keyword(s):  
Surface Properties ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Sintered Sample ◽  
The Other ◽  
Uniform Structure ◽  
Arc Plasma ◽  
Compact Sample ◽  
Spark Plasma ◽  
Cathodic Arc

The current investigation observes the outcome of enhancing the surface properties by AlCrN monolayer coating using the cathodic arc plasma method on the Fe–Cu–C–Mo alloys. The compacts were sintered in spark plasma sintering (SPS) with the heat transfer rate of 100 °C/min at 1120 °C for 5 minutes. The Fe–2Cu–0.8C–0.6Mo sample has the highest relative sintered density (97.20%), hardness (96 HRB), and ultimate tensile strength (1000 MPa) compare with the other sintered compacts. AlCrN coating was deposited on Fe, Fe–2Cu, Fe–2Cu–0.8C, Fe–2Cu–0.8C–0.2Mo, Fe–2Cu–0.8C–0.4Mo, and Fe–2Cu–0.8C–0.6Mo samples, using the cathodic arc plasma–physical vapor deposition (CAP-PVD) process. The coated compact samples’ metallography images were examined using a Scanning Electron Microscope (SEM); the Fe–2Cu alloy sintered sample has obtained a uniform structure with high density and a smaller amount of corrosion penetration rate (0.6579 mmpy) as compared to the counterparts. The phase formed in the AlCrN coating was analyzed using the X-ray Diffraction (XRD). The Fe–2Cu–0.8C–0.6Mo coated compact sample exhibited higher hardness (1134.85 HV0.3) than the other coated compact samples. The Fe–2Cu–0.8C–0.2Mo coated compact sample has proven better corrosion resistance compared to the other coated compact sample.

A new approach for controlling the crystal phase of NiPc in ionic liquids

CrystEngComm ◽  
2018 ◽  
Vol 20 (37) ◽  
pp. 5496-5499
Author(s):  
Yan Xiao ◽  
Long Zhang ◽  
Ge-Bo Pan
Keyword(s):  
Ionic Liquids ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Deposition Process ◽  
High Density ◽  
Crystal Phase ◽  
Low Density ◽  
New Approach ◽  
Physical Vapor Deposition Process ◽  
Vapor Deposition Process

α-NiPc and β-NiPc are obtained via a physical vapor deposition process which uses high density and low density ionic liquids (ILs) as substrates, respectively.

TEM characterization of WSix films

1994 ◽  
Vol 52 ◽  
pp. 848-849
Author(s):  
V. C. Kannan ◽  
S. M. Merchant ◽  
R. B. Irwin ◽  
A. K. Nanda ◽  
M. Sundahl ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Vapor Deposition ◽  
High Purity ◽  
Physical Vapor Deposition ◽  
Thermal Treatments ◽  
Rapid Thermal Anneal ◽  
Tungsten Silicide ◽  
Tem Characterization ◽  
Metal Silicides

Metal silicides such as WSi2, MoSi2, TiSi2, TaSi2 and CoSi2 have received wide attention in recent years for semiconductor applications in integrated circuits. In this study, we describe the microstructures of WSix films deposited on SiO2 (oxide) and polysilicon (poly) surfaces on Si wafers afterdeposition and rapid thermal anneal (RTA) at several temperatures. The stoichiometry of WSix films was confirmed by Rutherford Backscattering Spectroscopy (RBS). A correlation between the observed microstructure and measured sheet resistance of the films was also obtained.WSix films were deposited by physical vapor deposition (PVD) using magnetron sputteringin a Varian 3180. A high purity tungsten silicide target with a Si:W ratio of 2.85 was used. Films deposited on oxide or poly substrates gave rise to a Si:W ratio of 2.65 as observed by RBS. To simulatethe thermal treatments of subsequent processing procedures, wafers with tungsten silicide films were subjected to RTA (AG Associates Heatpulse 4108) in a N2 ambient for 60 seconds at temperatures ranging from 700° to 1000°C.

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