ChemInform Abstract: High-Mobility Bismuth-Based Transparent p-Type Oxide from High-Throughput Material Screening.

ChemInform ◽  
2016 ◽  
Vol 47 (12) ◽  
pp. no-no
Author(s):  
Geoffroy Hautier ◽  
et al.
Keyword(s):  
High Throughput ◽  
High Mobility ◽  
P Type ◽  
Material Screening

scholarly journals High-Mobility Bismuth-based Transparent p-Type Oxide from High-Throughput Material Screening

2015 ◽  
Vol 28 (1) ◽  
pp. 30-34 ◽  
Author(s):  
Amit Bhatia ◽  
Geoffroy Hautier ◽  
Tan Nilgianskul ◽  
Anna Miglio ◽  
Jingying Sun ◽  
...  
Keyword(s):  
High Throughput ◽  
High Mobility ◽  
P Type ◽  
Material Screening

Screen Printable Semiconductor Grade Inks for N and P type Doping of Polysilicon

MRS Advances ◽  
2016 ◽  
Vol 1 (14) ◽  
pp. 965-970 ◽  
Author(s):  
Aditi Chandra ◽  
Mao Takashima ◽  
Martha Montague ◽  
Joey Li ◽  
Arvind Kamath
Keyword(s):  
High Throughput ◽  
Process Integration ◽  
Low Cost ◽  
High Mobility ◽  
Form Factors ◽  
Surface Preparation ◽  
Production Environment ◽  
Additive Process ◽  
P Type ◽  
Screen Printed

ABSTRACTThis article describes the electrical and physical properties of polysilicon doped with novel N+ and P+ screen printed inks using a thermally activated process. Unique ink formulations for N and P type doping of silicon are evaluated in volume production in order to enable a low cost, high throughput process. Inks can be used with multiple substrate types and form factors. The concentrated doping source combined with thermal drive in and activation results in degenerately doped layers of polysilicon. Inks are semiconductor grade which is demonstrated by their use in fabricating high mobility, low leakage Thin Film Transistor (TFT) devices on 300 mm stainless steel substrates. Reproducible sheet resistance values (700 A polysilicon) can be engineered from levels typically ranging from 200 - 2000 ohm/sq. The additive approach substitutes the use of high capital cost ion implantation and lithography processes. The ink formulation results in screen printed widths capable of ranging from 100-300 um. As both N and P type layers can be printed adjacent to each other, it is critical to prevent cross doping using surface preparation techniques. Post doping cleaning of surfaces can be achieved in-situ or by plasma removal depending on process integration and product considerations. Reproducibility and uniformity data to demonstrate manufacturability in a production environment is shown. In summary, a simple, low cost, high throughput additive process based on proprietary inks that can be used in multiple product flows (CMOS TFT, Solar etc.) is demonstrated.

Anomalously persistent p-type behavior of WSe2 field-effect transistors by oxidized edge-induced Fermi-level pinning

2022 ◽  
Author(s):  
Tien Dat Ngo ◽  
Min Sup Choi ◽  
Myeongjin Lee ◽  
Fida Ali ◽  
Won Jong Yoo
Keyword(s):  
Fermi Level ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Two Dimensional ◽  
Edge Contact ◽  
Fermi Level Pinning ◽  
P Type

A technique to form the edge contact in two-dimensional (2D) based field-effect transistors (FETs) has been intensively studied for the purpose of achieving high mobility and also recently overcoming the...

scholarly journals Potential for high thermoelectric performance in n-type Zintl compounds: a case study of Ba doped KAlSb4

2017 ◽  
Vol 5 (8) ◽  
pp. 4036-4046 ◽  
Author(s):  
Brenden R. Ortiz ◽  
Prashun Gorai ◽  
Lakshmi Krishna ◽  
Rachel Mow ◽  
Armando Lopez ◽  
...  
Keyword(s):  
High Throughput ◽  
Thermoelectric Performance ◽  
P Type

High-throughput computational assessment of Zintl compounds reveals that n-type materials potentially outnumber and outperform p-type counterparts; n-type KAlSb4 reinforces the calculated results.

Water Vapour Effects on the Oxidation of Chromia-Forming Alloys

2011 ◽  
Vol 696 ◽  
pp. 200-205 ◽  
Author(s):  
Alain Galerie ◽  
Jean Pierre Petit ◽  
Yves Wouters ◽  
Julie Mougin ◽  
Anusara Srisrual ◽  
...  
Keyword(s):  
Water Vapour ◽  
Stainless Steels ◽  
High Mobility ◽  
Major Change ◽  
Growth Direction ◽  
Band Gap Energy ◽  
Type Semiconductor ◽  
Temperature Relaxation ◽  
P Type ◽  
Chromia Scales

The electronic properties of chromia scales grown between 800°C and 900°C on chromium metal and chromia-forming ferritic stainless steels were determined using room temperature PhotoElectroChemistry (PEC) experiments and the relative importance of the n- and p-character of the scales could be assessed. According to the thermodynamic previsions of defects structures, the external part of all the scales grown in oxygen exhibits band gap energy around 3.5 eV, with a marked p-type character on chromium and a possibly n-type behaviour on stainless steels. On the contrary, the internal part of the scales is always n-type, with predominant interstitial chromium defects. A major change appears when chromium or stainless steels are oxidised in water vapour-argon mixtures, where the absence of a p‑type semiconductor in the scales could be evidenced. Hydrogen defects are thought to be responsible of this particular behaviour which leads to a strong reduction of residual stresses due to increased high temperature relaxation. Moreover, the inversion of the growth direction resulting from high mobility of the OH defects makes the chromia scales grown in water vapour more adherent than when grown in oxygen.

scholarly journals A simple synthesis of transparent and highly conducting p-type CuxAl1−xSy nanocomposite thin films as the hole transporting layer for organic solar cells

RSC Advances ◽  
2018 ◽  
Vol 8 (30) ◽  
pp. 16887-16896 ◽  
Author(s):  
Xin Dai ◽  
Hongwei Lei ◽  
Cong Chen ◽  
Yaxiong Guo ◽  
Guojia Fang
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Organic Solar Cells ◽  
High Mobility ◽  
Simple Synthesis ◽  
Inorganic P ◽  
Nanocomposite Thin Films ◽  
Hole Transporting ◽  
P Type

Inorganic p-type films with high mobility are very important for opto-electronic applications.

Determination of Interface and Bulk Trap Densities in High-Mobility p-type WSe2Thin-Film Transistors

2017 ◽  
Vol 38 (4) ◽  
pp. 481-484 ◽  
Author(s):  
Hee-Joong Kim ◽  
Dae-Hwan Kim ◽  
Chan-Yong Jeong ◽  
Jeong-Hwan Lee ◽  
Hyuck-In Kwon
Keyword(s):  
High Mobility ◽  
P Type
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