ChemInform Abstract: Ferromagnetic Metal/III-V Semiconductor Hybrid Spintronic Devices

ChemInform ◽  
2008 ◽  
Vol 39 (15) ◽  
Author(s):  
Ping Kwan J. Wong ◽  
Yongbing Xu
Keyword(s):  
Ferromagnetic Metal ◽  
Spintronic Devices

Modulation of Heavy Metal/Ferromagnetic Metal Interface for High‐Performance Spintronic Devices

2019 ◽  
Vol 5 (8) ◽  
pp. 1900134 ◽  
Author(s):  
Shouzhong Peng ◽  
Daoqian Zhu ◽  
Jiaqi Zhou ◽  
Boyu Zhang ◽  
Anni Cao ◽  
...  
Keyword(s):  
Heavy Metal ◽  
High Performance ◽  
Ferromagnetic Metal ◽  
Metal Interface ◽  
Spintronic Devices

Non-Boolean Computing with Spintronic Devices

2018 ◽  
Author(s):  
Roxy Kawsher A. ◽  
Sanjukta Bhanja
Keyword(s):  
Spintronic Devices

Polariton Devices

2017 ◽  
Author(s):  
Alexey V. Kavokin ◽  
Jeremy J. Baumberg ◽  
Guillaume Malpuech ◽  
Fabrice P. Laussy
Keyword(s):  
Semiconductor Devices ◽  
Logic Gates ◽  
Light Sources ◽  
Coherent Light ◽  
Final State ◽  
Spintronic Devices ◽  
Exciton Polaritons ◽  
Terahertz Lasers ◽  
Coherence Lengths ◽  
Stimulation Of

Polariton devices offer multiple advantages compared to conventional semiconductor devices. The bosonic nature of exciton polaritons offers opportunity of realisation of polariton lasers: coherent light sources based on bosonic condensates of polaritons. The final state stimulation of any transition feeding a polariton condensate has been used in many proposals such as for terahertz lasers based on polariton lasers. Furthermore, large coherence lengths of exciton-polaritons in microcavities open the way to realisation of polariton transport devices including transistors and logic gates. Being bosonic spin carriers, exciton-polaritons may be used in spintronic devices and polarisation switches. This chapter offers an overview on the existing proposals for polariton devices.

Large Damping Enhancement in Dirac‐Semimetal–Ferromagnetic‐Metal Layered Structures Caused by Topological Surface States

2021 ◽  
pp. 2008411
Author(s):  
Jinjun Ding ◽  
Chuanpu Liu ◽  
Yuejie Zhang ◽  
Vijaysankar Kalappattil ◽  
Rui Yu ◽  
...  
Keyword(s):  
Surface States ◽  
Layered Structures ◽  
Ferromagnetic Metal ◽  
Dirac Semimetal ◽  
Topological Surface

scholarly journals Reducing Dzyaloshinskii-Moriya interaction and field-free spin-orbit torque switching in synthetic antiferromagnets

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Ruyi Chen ◽  
Qirui Cui ◽  
Liyang Liao ◽  
Yingmei Zhu ◽  
Ruiqi Zhang ◽  
...  
Keyword(s):  
Domain Wall ◽  
Tunnel Junctions ◽  
Low Power Consumption ◽  
Stray Field ◽  
Magnetic Memory ◽  
Spin Orbit ◽  
Theoretic Analysis ◽  
Spintronic Devices ◽  
Deterministic Switching ◽  
Moriya Interaction

AbstractPerpendicularly magnetized synthetic antiferromagnets (SAF), possessing low net magnetization and high thermal stability as well as easy reading and writing characteristics, have been intensively explored to replace the ferromagnetic free layers of magnetic tunnel junctions as the kernel of spintronic devices. So far, utilizing spin-orbit torque (SOT) to realize deterministic switching of perpendicular SAF have been reported while a large external magnetic field is typically needed to break the symmetry, making it impractical for applications. Here, combining theoretic analysis and experimental results, we report that the effective modulation of Dzyaloshinskii-Moriya interaction by the interfacial crystallinity between ferromagnets and adjacent heavy metals plays an important role in domain wall configurations. By adjusting the domain wall configuration between Bloch type and Néel type, we successfully demonstrate the field-free SOT-induced magnetization switching in [Co/Pd]/Ru/[Co/Pd] SAF devices constructed with a simple wedged structure. Our work provides a practical route for utilization of perpendicularly SAF in SOT devices and paves the way for magnetic memory devices with high density, low stray field, and low power consumption.

scholarly journals Synthesis and characterization of [7]triangulene

Nanoscale ◽  
2021 ◽  
Author(s):  
Shantanu Mishra ◽  
Kun Xu ◽  
Kristjan Eimre ◽  
Hartmut Komber ◽  
Ji Ma ◽  
...  
Keyword(s):  
High Spin ◽  
Ground States ◽  
Synthesis And Characterization ◽  
Spintronic Devices

Triangulene and its π-extended homologues constitute non-Kekulé polyradical frameworks with high-spin ground states, and are anticipated to be key components of organic spintronic devices. We report a combined in-solution and...

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