Processing of Titanium-Silicon Carbide Fibre Composites

ChemInform ◽  
2005 ◽  
Vol 36 (23) ◽  
Author(s):  
Xiao Guo
Keyword(s):  
Silicon Carbide ◽  
Titanium Silicon Carbide ◽  
Fibre Composites ◽  
Silicon Carbide Fibre ◽  
Titanium Silicon

scholarly journals Application of SHS process for fabrication of copper-titanium silicon carbide composite (Cu-Ti3SiC2)

2018 ◽  
Vol 1115 ◽  
pp. 042003 ◽  
Author(s):  
A P Amosov ◽  
E I Latukhin ◽  
A M Ryabov ◽  
E R Umerov ◽  
V A Novikov
Keyword(s):  
Silicon Carbide ◽  
Titanium Silicon Carbide ◽  
Carbide Composite ◽  
Titanium Silicon

Solid state interfacial reactions of Ti3Al with Si3N4 and SiC

1992 ◽  
Vol 7 (5) ◽  
pp. 1253-1265 ◽  
Author(s):  
T.C. Chou ◽  
A. Joshi
Keyword(s):  
Silicon Carbide ◽  
Solid State ◽  
Surface Region ◽  
Interfacial Reactions ◽  
Titanium Silicide ◽  
Reaction Products ◽  
Near Surface ◽  
Titanium Silicon Carbide ◽  
Titanium Silicon Nitride ◽  
Titanium Silicon

Solid state interfacial reactions of Ti3Al with Si3N4 and SiC have been studied via both bulk and thin film diffusion couples at temperatures of 1000 and 1200 °C. The nature of reactions of Ti3Al with Si3N4 and SiC was found to be similar. Only limited reactions were detected in samples reacted at 1000 °C. In the Ti3Al/Si3N4, layered reaction products consisting of mainly titanium silicide(s), titanium-silicon-aluminide, and titanium-silicon-nitride were formed; in the Ti3Al/SiC, the reaction product was primarily titanium-silicon-carbide. In both cases, silicon was enriched near the surface region, and aluminum was depleted from the reacted region. Reactions at 1200 °C resulted in a drastic change of the Si distribution profiles; the enrichment of Si in near surface regions was no longer observed, and the depletion of Al became more extensive. Titanium nitride and titanium-silicon-carbide were the major reaction products in the Ti3Al/Si3N4 and Ti3Al/SiC reactions, respectively. Mechanisms of driving the variation of Si, N, and C diffusion behavior (as a function of temperature) and the depletion of Al from the diffusion zone are suggested. It is proposed that reactions of Ti3Al with Si3N4 and SiC lead to in situ formation of a diffusion barrier, which limits the diffusion kinetics and further reaction. The thermodynamic driving force for the Ti3Al/Si3N4 reactions is discussed on the basis of Gibbs free energy.

Synthesis and tribological properties of hexagonal titanium silicon carbide crystals

2011 ◽  
Vol 46 (2) ◽  
pp. 178-182
Author(s):  
Qiong Wu ◽  
Hua Tang ◽  
Changsheng Li ◽  
Xiaofei Yang ◽  
Haojie Song ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Tribological Properties ◽  
Titanium Silicon Carbide ◽  
Titanium Silicon
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