The Preparation of a Bridgehead Organolithium Reagent.

Michael Harmata; Patrick Kirchhoefer

doi:10.1002/chin.200329067

Reactions of arylsulfonyl compounds with excess organolithium reagent

Bulletin of the Academy of Sciences of the USSR Division of Chemical Science ◽

10.1007/bf00973397 ◽

1976 ◽

Vol 25 (11) ◽

pp. 2362-2367 ◽

Cited By ~ 2

Author(s):

F. M. Stoyanovich ◽

M. A. Marakatkina ◽

Ya. L. Gol'dfarb

Keyword(s):

Organolithium Reagent

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Reaction of aromatic sulfonyl compounds with excess organolithium reagent

Bulletin of the Academy of Sciences of the USSR Division of Chemical Science ◽

10.1007/bf00920826 ◽

1976 ◽

Vol 25 (7) ◽

pp. 1503-1508

Author(s):

F. M. Stoyanovich ◽

G. B. Chermanova ◽

Ya. L. Gol'dfarb ◽

R. G. Karpenko

Keyword(s):

Organolithium Reagent

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Interfacial Design of Silicon/Polypyrrole Junctions

MRS Proceedings ◽

10.1557/proc-598-bb5.6 ◽

1999 ◽

Vol 598 ◽

Author(s):

Namyong Y. Kim ◽

Inge E. Vermeir ◽

Paul E. Laibinis

Keyword(s):

Electrochemical Polymerization ◽

Silicon Surfaces ◽

Polymerization Process ◽

Phase Reaction ◽

Chemically Modified ◽

Polypyrrole Films ◽

Molecular Film ◽

Electrochemical Control ◽

Current Densities ◽

Organolithium Reagent

ABSTRACTHydrogen-terminated silicon surfaces exposing a molecular film of covalently grafted pyrrole units were formed by a solution-phase reaction using the organolithium reagent 5-(N-pyrrolyl)pentyllithium. Electrochemical polymerization of pyrrole onto native hydrogen-terminated silicon surfaces and these chemically modified supports produced silicon/polypyrrole junctions that showed diode-like characteristics, with those formed on the latter substrate exhibiting higher current densities and better ideality factors. The presence of the grafted pyrrole films on silicon provided a better electrochemical control over the polymerization process and yielded smoother polypyrrole films than on the native hydrogen-terminated silicon supports. Impedance measurements revealed that the electrical improvements to the silicon/polypyrrole junctions were a consequence of incorporating sites on the silicon surface for direct contact between the conducting polymer and the semiconductor, as the barrier height of the junction appeared to be unaffected by the chemical modification.

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