Large-Scale Synthesis of Aligned Carbon Nanotubes Using FeCl3 as Floating Catalyst Precursor.

ChemInform ◽  
2003 ◽  
Vol 34 (16) ◽  
Author(s):  
Haoqing Hou ◽  
Andreas K. Schaper ◽  
Zeng Jun ◽  
Frank Weller ◽  
Andreas Greiner
2003 ◽  
Vol 15 (2) ◽  
pp. 580-585 ◽  
Author(s):  
Haoqing Hou ◽  
Andreas K. Schaper ◽  
Zeng Jun ◽  
Frank Weller ◽  
Andreas Greiner

2002 ◽  
Vol 41 (Part 2, No. 12B) ◽  
pp. L1488-L1491 ◽  
Author(s):  
Hiroyuki Hayashi ◽  
Mizuho Koga ◽  
Jun Kashirajima ◽  
Kazumasa Takahashi ◽  
Yasuaki Hayashi ◽  
...  

Science ◽  
1996 ◽  
Vol 274 (5293) ◽  
pp. 1701-1703 ◽  
Author(s):  
W. Z. Li ◽  
S. S. Xie ◽  
L. X. Qian ◽  
B. H. Chang ◽  
B. S. Zou ◽  
...  

2019 ◽  
Author(s):  
Mingguang Chen ◽  
Wangxiang Li ◽  
Anshuman Kumar ◽  
Guanghui Li ◽  
Mikhail Itkis ◽  
...  

<p>Interconnecting the surfaces of nanomaterials without compromising their outstanding mechanical, thermal, and electronic properties is critical in the design of advanced bulk structures that still preserve the novel properties of their nanoscale constituents. As such, bridging the p-conjugated carbon surfaces of single-walled carbon nanotubes (SWNTs) has special implications in next-generation electronics. This study presents a rational path towards improvement of the electrical transport in aligned semiconducting SWNT films by deposition of metal atoms. The formation of conducting Cr-mediated pathways between the parallel SWNTs increases the transverse (intertube) conductance, while having negligible effect on the parallel (intratube) transport. In contrast, doping with Li has a predominant effect on the intratube electrical transport of aligned SWNT films. Large-scale first-principles calculations of electrical transport on aligned SWNTs show good agreement with the experimental electrical measurements and provide insight into the changes that different metal atoms exert on the density of states near the Fermi level of the SWNTs and the formation of transport channels. </p>


Hyomen Kagaku ◽  
2004 ◽  
Vol 25 (6) ◽  
pp. 345-351
Author(s):  
Hiroki AGO ◽  
Satoshi OHSHIMA ◽  
Motoo YUMURA

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