ChemInform Abstract: The New Cubic Iron-Nitride Phase FeN Prepared by Reactive Magnetron Sputtering.

ChemInform ◽  
2010 ◽  
Vol 29 (40) ◽  
pp. no-no
Author(s):  
L. RISSANEN ◽  
M. NEUBAUER ◽  
K. P. LIEB ◽  
P. SCHAAF
Keyword(s):  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Nitride Phase ◽  
Iron Nitride ◽  
Reactive Magnetron

Influence of nitrogen flow rates on iron nitride thin films prepared by DC reactive magnetron sputtering

2017 ◽  
Vol 4 (5) ◽  
pp. 6173-6177 ◽  
Author(s):  
K. Jantasom ◽  
M. Horprathum ◽  
P. Eiamchai ◽  
S. Limwichean ◽  
N. Nuntawong ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Iron Nitride ◽  
Reactive Magnetron ◽  
Nitrogen Flow ◽  
Flow Rates ◽  
Dc Reactive Magnetron Sputtering

Magnetic properties of iron nitride films obtained by reactive magnetron sputtering

1998 ◽  
Vol 40 (4) ◽  
pp. 650-651 ◽  
Author(s):  
L. A. Chebotkevich ◽  
Yu. D. Vorob’ev ◽  
I. V. Pisarenko
Keyword(s):  
Magnetic Properties ◽  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Iron Nitride ◽  
Reactive Magnetron

Properties of MOS Structure Fabricated on 3C-SiC Grown by Reactive Magnetron Sputtering.

1994 ◽  
Vol 339 ◽  
Author(s):  
R. Turan ◽  
Q. Wahab ◽  
L. Hultman ◽  
M. Willander ◽  
J. -E. Sundgren
Keyword(s):  
Magnetron Sputtering ◽  
Interface State ◽  
State Density ◽  
Reactive Magnetron Sputtering ◽  
Oxide Semiconductor ◽  
Reactive Magnetron ◽  
Cross Sectional ◽  
Mos Structure ◽  
Transmission Electron ◽  
Wide Bandgap Materials

ABSTRACTWe report the fabrication and the characterization of Metal Oxide Semiconductor (MOS) structure fabricated on thermally oxidized 3C-SiC grown by reactive magnetron sputtering. The structure and the composition of the SiO2 layer was studied by cross-sectional transmission electron microscopy (XTEM) Auger electron spectroscopy (AES). Homogeneous stoichiometric SiO2 layers formed with a well-defined interface to the faceted SiC(lll) top surface. Electrical properties of the MOS capacitor have been analyzed by employing the capacitance and conductance techniques. C-V curves shows the accumulation, depletion and deep depletion phases. The capacitance in the inversion regime is not saturated, as usually observed for wide-bandgap materials. The unintentional doping concentration determined from the 1/C2 curve was found to be as low as 2.8 × 1015 cm-3. The density of positive charges in the grown oxide and the interface states have been extracted by using high-frequency C-V and conductance techniques. The interface state density has been found to be in the order of 1011cm2-eV-1.

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