ChemInform Abstract: The Allenic Pauson-Khand Cycloaddition. Dependence in π-Bond Selectivity on Substrate Structure.

ChemInform ◽  
2010 ◽  
Vol 29 (21) ◽  
pp. no-no
Author(s):  
K. M. BRUMMOND ◽  
H. WAN
Keyword(s):  
Substrate Structure ◽  
Bond Selectivity

Impact of Substrate Structure Changes Caused by Thermal Treatment on Hydrolysis Rate Within Anaerobic Digestion

2018 ◽  
Vol 2018 (18) ◽  
pp. 387-392
Author(s):  
Elizabeth Manning ◽  
Adrian Romero ◽  
Baoqiang Li ◽  
Ahmed Al-Omari ◽  
Matthew Higgins ◽  
...  
Keyword(s):  
Anaerobic Digestion ◽  
Thermal Treatment ◽  
Hydrolysis Rate ◽  
Substrate Structure ◽  
Structure Changes

Experimental Identification of Material Properties of Piezoelectric Patch Transducer

2013 ◽  
Vol 486 ◽  
pp. 205-210
Author(s):  
Zuzana Lašová ◽  
Robert Zemcik
Keyword(s):  
Health Monitoring ◽  
Material Properties ◽  
Element Model ◽  
Experimental Methods ◽  
Optical Microscope ◽  
Piezoelectric Patch ◽  
Experimental Identification ◽  
Substrate Structure ◽  
Significant Difference ◽  
Voltage Signal

This work is focused on identification of material properties of piezoelectric patch transducers used e.g. for structural health monitoring before attaching to the substrate structure. Two experimental methods were concerned. At first two piezoelectric patches were supplied with a pair of collocated strain gauge rosettes. Both transducers were actuated with the same periodical signal. Significant difference in the results for two transducers was found, however it was claimed to be within tolerance by the producer. As an alternative method a measurement in an optical microscope was chosen. The patch was clamped at one side and actuated by a voltage signal. The displacement of the free end was captured by the microscope and processed in a graphical editor. Finally, a finite element model of the transducer was created and its material data were obtained by calibration with experimental data.

Composition Analysis of Ge/Si1-xGex: C Buffer on Silicon Measured by Planar Scanning Energy Dispersive Spectroscopy

2011 ◽  
Vol 383-390 ◽  
pp. 7619-7623
Author(s):  
Z Z Lu ◽  
F. Yu ◽  
L. Yu ◽  
L. H. Cheng ◽  
P. Han
Keyword(s):  
Energy Dispersive Spectroscopy ◽  
Chemical Vapor ◽  
Energy Dispersive ◽  
Composition Analysis ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Composition Distribution ◽  
X Ray ◽  
Cvd Method ◽  
Substrate Structure

In this work, Si, Ge element composition distribution in Ge /Si1-xGex:C /Si substrate structure has been characterized and modified by planar scanning energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD). The Ge /Si1-xGex:C /Si substrate samples are grown by chemical vapor deposition (CVD) method. The accuracy of EDS value can be improved by ~ 32%. And the modified EDS results indicate the Ge distribution in the Ge/Si1-xGex:C/Si sub structure.

Substrate-Structure Dependence of Ag Electromigration on Au-Precovered Si(111) Surfaces

2000 ◽  
Vol 39 (Part 1, No. 7B) ◽  
pp. 4438-4442 ◽  
Author(s):  
Fangxiao Shi ◽  
Ichiro Shiraki ◽  
Tadaaki Nagao ◽  
Shuji Hasegawa
Keyword(s):  
Structure Dependence ◽  
Substrate Structure
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