ChemInform Abstract: Electrical Properties of β-LixV2O5 Thin Layers Prepared by the Sol-Gel Process.

ChemInform ◽  
2010 ◽  
Vol 25 (35) ◽  
pp. no-no
Author(s):  
S.-Y. BAE ◽  
M. MIYAYAMA ◽  
H. YANAGIDA
Keyword(s):  
Electrical Properties ◽  
Sol Gel ◽  
Thin Layers ◽  
Sol Gel Process

Electrical Properties of beta-LixV2O5 Thin Layers Prepared by the Sol-Gel Process

1994 ◽  
Vol 77 (4) ◽  
pp. 891-896 ◽  
Author(s):  
Seung-Young Bae ◽  
Masaru Miyayama ◽  
Hiroaki Yanagida
Keyword(s):  
Electrical Properties ◽  
Sol Gel ◽  
Thin Layers ◽  
Sol Gel Process

Generation of amorphous ceramic capacitor coatings on titanium using a continuous sol-gel process

1995 ◽  
Vol 10 (10) ◽  
pp. 2626-2630 ◽  
Author(s):  
Brian G. Dixon ◽  
Myles A. Walsh ◽  
Peter G. Phillips ◽  
R. Scott Morris
Keyword(s):  
Electrical Properties ◽  
Sol Gel ◽  
Thin Layers ◽  
Amorphous Films ◽  
Zinc Oxides ◽  
Sol Gel Process ◽  
Ceramic Capacitor ◽  
Amorphous Nature ◽  
Titanium Wire ◽  
Computer Controlled

Thin amorphous films of ceramic capacitor materials were successfully deposited using sol-gel chemistry onto titanium wire using a continuous, computer-controlled process. By repeatedly depositing and calcining very thin layers of material, smooth and even coats can be produced. Surface analyses revealed the layered nature of these thin coats, as well as the amorphous nature of the ceramic. The electrical properties of the better coatings, all composed of niobrium, bismuth, and zinc oxides, were then evaluated.

scholarly journals Synthesis and Electrical Properties of ZnO-ITO and Al-ITO thin Film by Spin Coating Technique Through Sol Gel Process

2018 ◽  
Author(s):  
Hardeli ◽  
Harry Sanjaya ◽  
Rahadian Zainul
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Indium Tin Oxide ◽  
Spin Coating ◽  
Sol Gel ◽  
Thin Layers ◽  
Spin Coating Technique ◽  
Coating Technique ◽  
Sol Gel Process ◽  
Zno Doping

In this research we has investigated synthesis and electrical properties of ITO (Indium Tin Oxide) thin layers doping Aluminum (Al) and ZnO with spin-coating technique through sol-gel process and calcined at ±550 ºC for 1 hour. Effect of Al and ZnO doping on the conductivity of ITO with 0%, 1%, 3% and 5% w/v dopant concentration and the number of coating (4 and 5 layers) has reported. ITO-Al has 2 phases, these are rhombohedral and cubic, the crystal size is 67.31 nm. Meanwhile, ITO-ZnO are rhombohedral, cubic (bixbyite) and hexagonal (wurtzite), with crystallite size value was 67.4 nm. The surface morphology data indicated film thickness was 3.4 µm (ITO-Al) and 0.974 nm (ITO-ZnO). The electrical properties shows that the optimum film in 4 layers coating with the addition of 5% doping value was 17 kΩ/cm2 (ITO-Al) and 5-layered by addition of 5% of doping ZnO (80.800 kΩ/cm2). Meanwhile, ITO-Al thin film with 4 layers coating without doping was 9.331 kΩ / cm2, and for ITO-ZnO (5 layers) coating without doping was 11.796 kΩ/cm2. Al and ZnO doping decrease the electrical conductivity of ITO.

Study of the structural and electrical properties of PMNT 68/32 ceramic prepared by a sol–gel process

2005 ◽  
Vol 78 (4) ◽  
pp. 329-336 ◽  
Author(s):  
Pawan Kumar ◽  
O. P. Thakur ◽  
Chandra Prakash ◽  
T. C. Goel
Keyword(s):  
Electrical Properties ◽  
Sol Gel ◽  
Structural And Electrical Properties ◽  
Sol Gel Process

Influence of Bi3.15Nd0.85Ti3O12 Buffer Layer on Structure and Electrical Properties of Bi0.94Ce0.06Fe0.97Ti0.03O3 Thin Films

2014 ◽  
Vol 703 ◽  
pp. 51-55
Author(s):  
Jia Zeng ◽  
Ming Hua Tang ◽  
Zhen Hua Tang ◽  
Yong Guang Xiao ◽  
Long Peng ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Buffer Layer ◽  
Current Density ◽  
Coercive Field ◽  
Remnant Polarization ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Si Substrates ◽  
Sol Gel Process

Bi0.94Ce0.06Fe0.97Ti0.03O3 and Bi0.94Ce0.06Fe0.97Ti0.03O3/Bi3.15Nd0.85Ti3O12 double-layered thin films were fabricated via sol-gel process on Pt/Ti/SiO2/Si substrates. The influence of Bi3.15Nd0.85Ti3O12 buffer layer on microstructure and electrical properties of Bi0.94Ce0.06Fe0.97Ti0.03O3 thin films were investigated in detail. Well-saturated P-E hysteresis loops can be obtained in Bi0.94Ce0.06Fe0.97Ti0.03O3 films with Bi3.15Nd0.85Ti3O12 buffer. The remnant polarization (2Pr) of the double-layered thin films is 112 μC/cm2. The coercive field (2Ec) of double-layered films is 672 kV/cm, which is much lower than that of the Bi0.94Ce0.06Fe0.97Ti0.03O3 thin films. The leakage current density of Bi0.94Ce0.06Fe0.97Ti0.03O3/Bi3.15Nd0.85Ti3O12 double-layered thin films is 4.12×10-5 A/cm2.

Effect of Ga content and sintering time on electrical properties of InGaZnO thin film transistors fabricated by sol–gel process

2011 ◽  
Vol 326 (1) ◽  
pp. 175-178 ◽  
Author(s):  
Jun Hyuk Choi ◽  
Soo Min Hwang ◽  
Chang Min Lee ◽  
Ji Cheol Kim ◽  
Geun Chul Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Sintering Time ◽  
Sol Gel Process ◽  
Ga Content
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