ChemInform Abstract: Ultrathin Tantalum Oxide Capacitor Dielectric Layers Fabricated Using Rapid Thermal Nitridation Prior to Low Pressure Chemical Vapor Deposition.

ChemInform ◽  
2010 ◽  
Vol 24 (42) ◽  
pp. no-no
Author(s):  
S. KAMIYAMA ◽  
P.-Y. LESAICHERRE ◽  
H. SUZUKI ◽  
A. SAKAI ◽  
I. NISHIYAMA ◽  
...  
1993 ◽  
Vol 140 (6) ◽  
pp. 1617-1625 ◽  
Author(s):  
Satoshi Kamiyama ◽  
Pierre‐Yves Lesaicherre ◽  
Hiroshi Suzuki ◽  
Akira Sakai ◽  
Iwao Nishiyama ◽  
...  

1992 ◽  
Vol 284 ◽  
Author(s):  
William R. Hitchens ◽  
Wilbur C. Krusell ◽  
Daniel M. Dobkin

ABSTRACTTa2O5 films suitable for DRAM use have been deposited on silicon, polysilicon, and SiO2 by LP-CVD from Ta (OC2H5)5 and O2. Uniformity, reproducibility, and conformality are excellent. Annealed films are polycrystalline, and their surfaces are characterized by 2 nm high, 1 mgr;m diameter nucleation centers surrounded by circular crystallization fronts. The electrical properties of annealed films are dominated by a SiO2-rich layer which forms between the Ta2O5 and the silicon or polysilicon substrate.


Author(s):  
Meric Firat ◽  
Hariharsudan Sivaramakrishnan Radhakrishnan ◽  
Maria Recaman Payo ◽  
Filip Duerinckx ◽  
Rajiv Sharma ◽  
...  

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