ChemInform Abstract: Tetradecker LM(C3B2)Co(C2B3)CoCp Sandwich Complexes (LM: Cp*Co, Cp*Rh, or (cymene)Ru). Designed Synthesis and Electronic Properties.

ChemInform ◽  
2010 ◽  
Vol 22 (15) ◽  
pp. no-no
Author(s):  
A. FESSENBECKER ◽  
M. D. ATTWOOD ◽  
R. N. GRIMES ◽  
M. STEPHAN ◽  
H. PRITZKOW ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Sandwich Complexes ◽  
Designed Synthesis

Tetradecker LM(C3B2)Co(C2B3)CoCp sandwich complexes [LM = Cp*Co, Cp*Rh, or (cymene)Ru]. Designed synthesis and electronic properties

1990 ◽  
Vol 29 (26) ◽  
pp. 5164-5168 ◽  
Author(s):  
Achim Fessenbecker ◽  
Martin D. Attwood ◽  
Russell N. Grimes ◽  
Martin Stephan ◽  
Hans Pritzkow ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Sandwich Complexes ◽  
Designed Synthesis

Coordination chemistry of mixed M(benzene)(cyclopendadienyl) sandwich complexes: electronic properties and bonding analysis

2016 ◽  
Vol 40 (3) ◽  
pp. 2554-2564 ◽  
Author(s):  
Saber-Mustapha Zendaoui ◽  
Bachir Zouchoune
Keyword(s):  
Coordination Chemistry ◽  
Electronic Properties ◽  
Spin State ◽  
Sandwich Complexes ◽  
Coordination Modes ◽  
Bonding Analysis ◽  
Iron Metal

Various coordination modes are adopted by the benzene and the cyclopentadienyl ring depending on the electron count of the iron metal and the spin state of the complex.

scholarly journals Molecular and thin film properties of cobalt half-sandwich compounds for optoelectronic application

2017 ◽  
Vol 19 (9) ◽  
pp. 6768-6776 ◽  
Author(s):  
Maxwell Reinhardt ◽  
Simon Dalgleish ◽  
Yoshiaki Shuku ◽  
Louisa Reissig ◽  
Michio M. Matsushita ◽  
...  
Keyword(s):  
Thin Film ◽  
Electronic Properties ◽  
Optoelectronic Device ◽  
Sandwich Complexes ◽  
Film Properties ◽  
Sandwich Compounds ◽  
Device Application ◽  
Optoelectronic Application ◽  
Half Sandwich ◽  
Optoelectronic Device Application

The structure and electronic properties of two cobalt half-sandwich complexes are described in view of their potential optoelectronic device application.

Photogeneration of charges in poly(N-vinylcarbazole) doped with lutetium bisphthalocyanines and lutetium bisnaphthalocyanines

2003 ◽  
Vol 07 (05) ◽  
pp. 382-387 ◽  
Author(s):  
Laurent Galmiche ◽  
François Guyon ◽  
Annig Pondaven ◽  
Jean-Yves Moisan ◽  
Maurice L'Her
Keyword(s):  
Electronic Properties ◽  
Lanthanide Complexes ◽  
Single Layer ◽  
Redox Properties ◽  
Electron Acceptors ◽  
Electron Donors ◽  
Sandwich Complexes ◽  
Near Ir ◽  
Potential Applications ◽  
Photogeneration Of Charges

Lutetium bisphthalocyanines and bisnaphthalocyanines, sandwich complexes having interesting electronic properties were studied as electron-acceptors associated with the donor polyvinylcarbazole ( PVCz ) in single-layer photoconductors. It is known, from their redox properties, that these lanthanide complexes are potential electron-acceptors as well as electron-donors; moreover, they strongly absorb light from the near-UV to the near-IR. The xerographic spectra recorded between 400 and 900 nm show that the polymeric phases doped with the lutetium bisphthalocyanines are photoconductive. These new photoconducting phases are active in the near IR domain which is promising with regard to their potential applications.

Structural properties of GaAs/InGaAs/GaAs (001) and InGaAs/GaAs (001) heterostructures and correlation with electronic properties

1990 ◽  
Vol 48 (4) ◽  
pp. 602-603
Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Gaas Substrate ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Band Offset ◽  
Misfit Dislocations ◽  
Gaas Substrates ◽  
Gaas Structure ◽  
Low X

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.

Electronic properties of two coupled Siδ-doped GaAs structures

2002 ◽  
Vol 21 (2) ◽  
pp. 91-95 ◽  
Author(s):  
E. Ozturk ◽  
H. Sari ◽  
Y. Ergun ◽  
I. Sokmen
Keyword(s):  
Electronic Properties
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