ChemInform Abstract: ELECTRONIC STRUCTURE OF HIGHLY SYMMETRICAL COMPOUNDS OF THE FLUORINE GROUP ELEMENTS. XI. ELECTRONIC RAMAN SPECTRUM AND CRYSTAL FIELD SPLITTING PATTERN OF THE 3H4 GROUND STATE MULTIPLICITY OF DICESIUM POTASSIUM PRASEODYMIUM HEXAFLUORID

1979 ◽  
Vol 10 (14) ◽  
Author(s):  
H.-D. AMBERGER
2014 ◽  
Vol 53 (19) ◽  
pp. 10359-10369 ◽  
Author(s):  
Seira Shintoyo ◽  
Keishiro Murakami ◽  
Takeshi Fujinami ◽  
Naohide Matsumoto ◽  
Naotaka Mochida ◽  
...  

1996 ◽  
Vol 442 ◽  
Author(s):  
Harald Overhof

AbstractThe electronic properties of 3d transition metal (TM) defects located on one of the four different tetrahedral positions in 3C SiC are shown to be quite site-dependent. We explain the differences for the 3d TMs on the two substitutional sites within the vacancy model: the difference of the electronic structure between the carbon vacancy VC and the silicon vacancy VSi is responsible for the differences of the 3d TMs. The electronic properties of 3d TMs on the two tetrahedral interstitial sites differ even more: the TMs surrounded tetrahedrally by four Si atoms experience a large crystal field splitting while the tetrahedral C environment does not give rise to a significant crystal field splitting at all. It is only in the latter case that high-spin configurations are predicted.


2006 ◽  
Vol 110 (11) ◽  
pp. 5279-5285 ◽  
Author(s):  
Patric Lindqvist-Reis ◽  
Clemens Walther ◽  
Reinhardt Klenze ◽  
Andreas Eichhöfer ◽  
Thomas Fanghänel

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