ChemInform Abstract: SPREADING RESISTANCE MEASUREMENTS ON GALLIUM ARSENIDE

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure, obtained by the method of capacitive deep levels transient spectroscopy with data processing according to the Oreshkin model and Lang model, are considered.

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DEEP LEVELS' ACTIVATION ENERGY DEPENDENCE ON MEASUREMENT MODES

CAD/EDA, MODELING AND SIMULATION IN MODERN ELECTRONICS: COLLECTION OF SCIENTIFIC PAPERS OF THE III INTERNATIONAL SCIENTIFIC AND PRACTICAL CONFERENCE ◽

10.30987/conferencearticle_5e028210156607.46541827 ◽

2019 ◽

Author(s):

Aleksey Bogachev ◽

Vladimir Krylov

Keyword(s):

Activation Energy ◽

Gallium Arsenide ◽

Energy Dependence ◽

Deep Level ◽

Deep Levels ◽

Blocking Voltage

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure by capacitive relaxation spectroscopy of deep levels at various values of the blocking voltage are considered.

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Identification of Root Cause Failure in Silicon on Insulator Body Contacted nFETs Using Scanning Capacitance Microscopy and Scanning Spreading Resistance Microscopy

ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2006p0102 ◽

2006 ◽

Author(s):

J.S. McMurray ◽

C.M. Molella

Keyword(s):

The Body ◽

Silicon On Insulator ◽

Back Side ◽

Cross Sectional ◽

Plan View ◽

Spreading Resistance ◽

Scanning Capacitance Microscopy ◽

Root Cause ◽

Cross Sectional Imaging ◽

Active Channel

Abstract Root cause for failure of 90 nm body contacted nFETs was identified using scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM). The failure mechanism was identified using both cross sectional imaging and imaging of the active silicon - buried oxide (BOX) interface in plan view. This is the first report of back-side plan view SCM and SSRM data for SOI devices. This unique plan view shows the root cause for the failure is an under doped link up region between the body contacts and the active channel of the device.

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Gallium Arsenide Integrated Circuits Decapsulation Technique Using Mixed Acid Chemistry For Die-Level Failure Analysis

10.31399/asm.cp.istfa2018p0496 ◽

2018 ◽

Author(s):

Harold Jeffrey M. Consigo ◽

Ricardo S. Calanog ◽

Melissa O. Caseria

Keyword(s):

Gallium Arsenide ◽

Sulfuric Acid ◽

Nitric Acid ◽

Integrated Circuits ◽

Failure Analysis ◽

Mixed Acid ◽

Optimum Parameters ◽

Plastic Package ◽

Fuming Nitric Acid ◽

Concentrated Sulfuric Acid

Abstract Gallium Arsenide (GaAs) integrated circuits have become popular these days with superior speed/power products that permit the development of systems that otherwise would have made it impossible or impractical to construct using silicon semiconductors. However, failure analysis remains to be very challenging as GaAs material is easily dissolved when it is reacted with fuming nitric acid used during standard decapsulation process. By utilizing enhanced chemical decapsulation technique with mixture of fuming nitric acid and concentrated sulfuric acid at a low temperature backed with statistical analysis, successful plastic package decapsulation happens to be reproducible mainly for die level failure analysis purposes. The paper aims to develop a chemical decapsulation process with optimum parameters needed to successfully decapsulate plastic molded GaAs integrated circuits for die level failure analysis.

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