ChemInform Abstract: ELECTRON SPIN RESONANCE CHARACTERIZATION OF GROUND STATE TRIPLET ARYL CATIONS SUBSTITUTED AT THE 4 POSITION BY DIALKYLAMINO GROUPS

1978 ◽  
Vol 9 (45) ◽  
Author(s):  
A. COX ◽  
T. J. KEMP ◽  
D. R. PAYNE ◽  
M. C. R. SYMONS ◽  
P. P. DE MOIRA
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Ground State ◽  
Spin Resonance

Electron spin resonance characterization of ground state triplet aryl cations substituted at the 4 position by dialkylamino groups

1978 ◽  
Vol 100 (15) ◽  
pp. 4779-4783 ◽  
Author(s):  
Alan Cox ◽  
Terence J. Kemp ◽  
David R. Payne ◽  
Martyn C. R. Symons ◽  
Peter Pinot de Moira
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Ground State ◽  
Spin Resonance

Electron Spin Resonance Characterization of Defects at Interfaces in Stacks of Ultrathin High-κ Dielectric Layers on Silicon

2003 ◽  
Vol 786 ◽  
Author(s):  
A. L. Stesmans ◽  
V.V. Afanas'ev
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Dielectric Layers ◽  
Growth Standard ◽  
Spin Resonance ◽  
Dielectric Interfaces ◽  
Standard Quality

ABSTRACTElectron spin resonance (ESR) analysis of (100)Si/SiOx/ZrO2, (100)Si/Al2O3 and Si/HfO2 structures with nm-thin dielectric layers deposited by different chemical vapor deposition procedures reveals, after hydrogen detachment, the presence of the trivalent Si dangling-bond-type centers Pb0, Pb1 as prominent defects in all entities. This Pb0, Pb1 fingerprint, generally unique for the thermal (100)Si/SiO2 interface, indicates that the as-deposited (100)Si/metal oxides interface is basically Si/SiO2-like. Though sensitive to the deposition process, the Pb0 density is found to be substantially larger than in standard (100)Si/SiO2. As probed by the Pb- type center properties, the Si/dielectric interfaces of all structures are under enhanced (unrelaxed) stress, typical for low temperature Si/SiO2 growth. Standard quality thermal Si/SiO2 properties in terms of Pb signature may be approached by appropriate annealing (≥ 650°C) in vacuum in the case of (100)Si/SiOx/ZrO2. Yet, O2 ambient appears required for Si/Al2O3 and Si/HfO2. It appears that Si/high-κ metal oxide structures with device grade quality interfaces can be realized with sub-nm thin SiOx interlayers. The density of fast interface states closely matches the Pb0 density variations, suggesting the center as the dominant fast interface trap. They may be efficiently passivated in H2 at 400 °C.

scholarly journals Characterization of manganese in coal by electron spin resonance.

1985 ◽  
Vol 34 (5) ◽  
pp. 243-247 ◽  
Author(s):  
Junichi SHIDA ◽  
Mamoru ITOH ◽  
Tateaki OGATA ◽  
Hitoshi KAMADA
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Spin Resonance

scholarly journals Two-dimensional pulsed electron spin resonance characterization of 15 N-labeled archaeal Rieske-type ferredoxin

FEBS Letters ◽  
2009 ◽  
Vol 583 (21) ◽  
pp. 3467-3472 ◽  
Author(s):  
Toshio Iwasaki ◽  
Rimma I. Samoilova ◽  
Asako Kounosu ◽  
Sergei A. Dikanov
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Two Dimensional ◽  
Spin Resonance

scholarly journals Open-shell Donors and Closed-shell Acceptors in Organic Solar Cells

2021 ◽  
Author(s):  
Zhongxin Chen ◽  
Yuan Li ◽  
Wenqiang Li ◽  
Weiya Zhu ◽  
Miao Zeng ◽  
...  
Keyword(s):  
Solar Cells ◽  
Electron Spin Resonance ◽  
Electron Spin ◽  
Organic Solar Cells ◽  
Ground State ◽  
Variable Temperature ◽  
Closed Shell ◽  
Open Shell ◽  
Singlet Ground State ◽  
Spin Resonance

The active materials of organic solar cells are widely recognized to show closed-shell singlet ground state and their electron spin resonance signals are attributed to the defects and impurities. Herein, we disclose the inherent open-shell singlet ground state of donors and the closed-shell structure of acceptors via the combination of variable temperature NMR, electron spin resonance, superconducting quantum interference device and theoretical calculation, providing a new perspective to understand the intrinsic molecular structure in organic solar cells.

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