ChemInform Abstract: LATTICE DEFECTS IN INDIUM OXIDE

1978 ◽  
Vol 9 (45) ◽  
Author(s):  
N. A. AHMED ◽  
Z. M. HANAFI ◽  
F. M. ISMAIL ◽  
S. A. NASSER
Keyword(s):  
Indium Oxide ◽  
Lattice Defects

Lattice Defects in O+Implanted Tin-Doped Indium Oxide Films

1993 ◽  
Vol 32 (Part 2, No. 9B) ◽  
pp. L1352-L1355 ◽  
Author(s):  
Yuzo Shigesato ◽  
David C. Paine ◽  
T. E. Haynes
Keyword(s):  
Indium Oxide ◽  
Oxide Films ◽  
Lattice Defects ◽  
Indium Oxide Films

Contrast in Scanning Images of Thin Crystals

1972 ◽  
Vol 30 ◽  
pp. 520-521
Author(s):  
S. Kimoto ◽  
H. Hashimoto ◽  
S. Takashima ◽  
R. M. Stern ◽  
T. Ichinokawa
Keyword(s):  
Crystal Surface ◽  
Solid Angle ◽  
Incident Angle ◽  
Intensity Variation ◽  
Lattice Defects ◽  
Scanning Microscope ◽  
Electron Detector ◽  
Backscattered Electrons ◽  
Electron Image ◽  
Backscattered Electron

The most well known application of the scanning microscope to the crystals is known as Coates pattern. The contrast of this image depends on the variation of the incident angle of the beam to the crystal surface. The defect in the crystal surface causes to make contrast in normal scanning image with constant incident angle. The intensity variation of the backscattered electrons in the scanning microscopy was calculated for the defect in the crystals by Clarke and Howie. Clarke also observed the defect using a scanning microscope.This paper reports the observation of lattice defects appears in thin crystals through backscattered, secondary and transmitted electron image. As a backscattered electron detector, a p-n junction detector of 0.9 π solid angle has been prepared for JSM-50A. The gain of the detector itself is 1.2 x 104 at 50 kV and the gain of additional AC amplifier using band width 100 Hz ∼ 10 kHz is 106.

Crystal structure-size relationship in ultrafine metallic particles

1989 ◽  
Vol 47 ◽  
pp. 266-267
Author(s):  
Jun Liu ◽  
Mehmet Sarikaya ◽  
Ilhan A. Aksay
Keyword(s):  
Ultrafine Particles ◽  
Carbon Film ◽  
Lattice Defects ◽  
Careful Examination ◽  
Seeded Growth ◽  
Gold Particles ◽  
Metallic Particles ◽  
Interfacial Structures ◽  
Typical Particle ◽  
Many Particles

Ultrafine particles usually have unique physical properties. This study illustrates how the lattice defects and interfacial structures between particles are related to the size of ultrafine crystalline gold particles.Colloidal gold particles were produced by reducing gold chloride with sodium citrate at 100°C. In this process, particle size can be controlled by changing the concentration of the reactant. TEM samples are prepared by transferring a small amount of solution onto a thin (5 nm) carbon film which is suspended on a copper grid. In this work, all experiments were performed with Philips 430T at 300 kV.With controlled seeded growth, particles of different sizes are produced, as shown in Figure 1. By a careful examination, it can be resolved that very small particles have lattice defects with complex interfaces. Some typical particle structures include multiple twins, resulting in a five-fold symmetry bicrystals, and highly disordered regions. Many particles are too complex to be described by simple models.

Effects of dopant concentration on the microstructure of tin- doped indium oxide thin films

1990 ◽  
Vol 48 (4) ◽  
pp. 716-717
Author(s):  
I. A. Rauf
Keyword(s):  
Thin Films ◽  
Indium Oxide ◽  
Ionic Radius ◽  
Free Carrier ◽  
Electron Gun ◽  
Periodic Lattice ◽  
Oxide Thin Films ◽  
Transmission Electron ◽  
The Difference ◽  
Dopant Atoms

To understand the electronic conduction mechanism in Sn-doped indium oxide thin films, it is important to study the effect of dopant atoms on the neighbouring indium oxide lattice. Ideally Sn is a substitutional dopant at random indium sites. The difference in valence (Sn4+ replaces In3+) requires that an extra electron is donated to the lattice and thus contributes to the free carrier density. But since Sn is an adjacent member of the same row in the periodic table, the difference in the ionic radius (In3+: 0.218 nm; Sn4+: 0.205 nm) will introduce a strain in the indium oxide lattice. Free carrier electron waves will no longer see a perfect periodic lattice and will be scattered, resulting in the reduction of free carrier mobility, which will lower the electrical conductivity (an undesirable effect in most applications).One of the main objectives of the present investigation is to understand the effects of the strain (produced by difference in the ionic radius) on the microstructure of the indium oxide lattice when the doping level is increased to give high carrier densities. Sn-doped indium oxide thin films were prepared with four different concentrations: 9, 10, 11 and 12 mol. % of SnO2 in the starting material. All the samples were prepared at an oxygen partial pressure of 0.067 Pa and a substrate temperature of 250°C using an Edwards 306 coating unit with an electron gun attachment for heating the crucible. These deposition conditions have been found to give optimum electrical properties in Sn-doped indium oxide films. A JEOL 2000EX transmission electron microscope was used to investigate the specimen microstructure.

MÖSSBAUER STUDIES OF SOLUTE ATOM ASSOCIATED WITH LATTICE DEFECTS IN METALS

1979 ◽  
Vol 40 (C2) ◽  
pp. C2-571-C2-572
Author(s):  
Y. Ishida ◽  
T. Ozawa ◽  
H. Ichinose ◽  
K. Sassa ◽  
M. Taniwaki ◽  
...  
Keyword(s):  
Solute Atom ◽  
Lattice Defects ◽  
Mössbauer Studies

MÖSSBAUER SPECTRUM OF57Fe AND119Sn ASSOCIATED WITH LATTICE DEFECTS IN ALUMINIUM

1974 ◽  
Vol 35 (C6) ◽  
pp. C6-309-C6-313
Author(s):  
M. KATO ◽  
Y. ISHIDA ◽  
K. SASSA ◽  
S. UMEYAMA ◽  
M. MORI
Keyword(s):  
Lattice Defects ◽  
Mossbauer Spectrum ◽  
Mössbauer Spectrum

Defect structure examination of Sn-doped indium oxide (ITO)

2007 ◽  
Vol 2007 (suppl_26) ◽  
pp. 489-494 ◽  
Author(s):  
J. Popović ◽  
E. Tkalčec ◽  
B. Gržeta ◽  
C. Goebbert ◽  
V. Ksenofontov ◽  
...  
Keyword(s):  
Indium Oxide ◽  
Defect Structure

A TEM study of lattice defects in naturally and experimentally deformed orthopyroxenes

1987 ◽  
Vol 110 (5) ◽  
pp. 497-512 ◽  
Author(s):  
Loeïz Nazé ◽  
Nicole Doukhan ◽  
Jean-Claude Doukhan ◽  
Khellil Latrous
Keyword(s):  
Lattice Defects

A novel heterostructure coupling MOF-derived fluffy porous indium oxide with g-C3N4 for enhanced photocatalytic activity

2021 ◽  
Vol 133 ◽  
pp. 111078 ◽  
Author(s):  
Xing Liu ◽  
Lu Zhang ◽  
Yudong Li ◽  
Xianzhu Xu ◽  
Yunchen Du ◽  
...  
Keyword(s):  
Photocatalytic Activity ◽  
Indium Oxide
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