ChemInform Abstract: PREPARATION OF SINGLE CRYSTALS OF ALUMINUM TRIFLUORIDE, IRON TRIFLUORIDE, AND TITANIUM TRIFLUORIDE BY CHEMICAL TRANSPORT IN VAPOR PHASE

1978 ◽  
Vol 9 (37) ◽  
Author(s):  
C. BONNAMY ◽  
J.-C. LAUNAY ◽  
M. POUCHARD
Keyword(s):  
Single Crystals ◽  
Vapor Phase ◽  
Chemical Transport ◽  
Aluminum Trifluoride

The growth of CdAs2 and ZnAs2 single crystals from the vapor phase

1978 ◽  
Vol 44 (2) ◽  
pp. 259-261 ◽  
Author(s):  
S.F. Marenkin ◽  
B. Huseynov ◽  
V.Y. Shevchenko ◽  
N.K. Belyskiy
Keyword(s):  
Single Crystals ◽  
Vapor Phase

Growth of single crystals of U1−xThxO2 solid solutions by chemical transport reactions

1978 ◽  
Vol 44 (1) ◽  
pp. 1-4 ◽  
Author(s):  
Naoki Kamegashira ◽  
Katsumi Ohta ◽  
Keiji Naito
Keyword(s):  
Single Crystals ◽  
Solid Solutions ◽  
Chemical Transport

Gas-phase synthesis of single crystals of Ge–Si system

2020 ◽  
Vol 34 (19) ◽  
pp. 2050178
Author(s):  
Aynur I. Hashimova
Keyword(s):  
Temperature Gradient ◽  
Single Crystals ◽  
Gas Phase ◽  
Vapor Phase ◽  
Solid Solutions ◽  
Closed Volume ◽  
Phase Synthesis ◽  
Polycrystalline Layer ◽  
Cold Zone ◽  
Hot Zone

In this study, the synthesis of single crystals of solid solutions Ge[Formula: see text]Si[Formula: see text] from the gas phase was performed in two different variants. Here, the vapor phase is created in a closed volume. A special ampoule has been made for this purpose. Ge–Si is placed near one end of the ampoule. A temperature gradient is created along the ampoule. The temperature of the hot zone was chosen to be [Formula: see text]C and the temperature of the cold zone to be [Formula: see text]C. It has been found that single crystals can form not only on the polycrystalline layer, but also from separate centers on the walls of the ampoule.

Vapor-phase growth of high-quality GaN single crystals in crucible by carbothermal reduction and nitridation of Ga2O3

2008 ◽  
Vol 310 (3) ◽  
pp. 530-535 ◽  
Author(s):  
Akira Miura ◽  
Shiro Shimada ◽  
Takashi Sekiguchi ◽  
Masaaki Yokoyama ◽  
Bunsyo Mizobuchi
Keyword(s):  
Single Crystals ◽  
Vapor Phase ◽  
Carbothermal Reduction ◽  
Phase Growth ◽  
High Quality ◽  
Vapor Phase Growth

Thermodynamic Analysis of Impurities in the Sublimation Growth of AlN Single Crystals

2006 ◽  
Vol 955 ◽  
Author(s):  
Li Du ◽  
James H Edgar
Keyword(s):  
Crystal Growth ◽  
Partial Pressure ◽  
Single Crystals ◽  
High Temperatures ◽  
Thermodynamic Analysis ◽  
Vapor Phase ◽  
Graphite Furnace ◽  
Main Species ◽  
Carbon Species ◽  
Sublimation Growth

ABSTRACTThe vapor phase species responsible for the transport of impurities in the sublimation-recondensation growth of bulk AlN crystals was predicted by thermodynamic analysis. AlN powder containing oxygen was investigated in Al-O-N system for an inert reactor. Dialuminum monoxide (Al2O) is strongly favored over all other possible oxygen containing species including NO and NO2. For AlN crystal growth in a graphite furnace, the Al-O-C-N system was studied. CO is the main species containing carbon and oxygen, and has a partial pressure more than one hundred times higher than all other carbon or oxygen containing species. Its partial pressure even exceeds that of Al vapor. Pure AlN growth on SiC seed was represented in the Al-N-Si-C system. SiC is not stable at high temperatures, the presence of nitrogen accelerates the decomposition of the SiC, and the most probable volatile silicon and carbon species originating from the SiC seed are Si, CN and C2N2.

Single crystals of uranium oxides by chemical transport reactions

1971 ◽  
Vol 8 (2) ◽  
pp. 219-220 ◽  
Author(s):  
Keiji Naito ◽  
Naoki Kamegashira ◽  
Yuji Nomura
Keyword(s):  
Single Crystals ◽  
Chemical Transport ◽  
Uranium Oxides

Growth of large Mo18O52 single crystals by a vapor phase method

1989 ◽  
Vol 96 (3) ◽  
pp. 708-710 ◽  
Author(s):  
Odile Bertrand ◽  
Nicole Floquet ◽  
Dominique Jacquot
Keyword(s):  
Single Crystals ◽  
Vapor Phase ◽  
Phase Method
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