ChemInform Abstract: SYNTHESIS OF CONTINUOUS SILICON CARBIDE FIBERS WITH HIGH TENSILE STRENGTH

1977 ◽  
Vol 8 (1) ◽  
pp. no-no
Author(s):  
S. YAJIMA ◽  
K. OKAMURA ◽  
J. HAYASHI ◽  
M. OMORI
Keyword(s):  
Silicon Carbide ◽  
Tensile Strength ◽  
High Tensile Strength ◽  
Silicon Carbide Fibers

CONTINUOUS SILICON CARBIDE FIBER OF HIGH TENSILE STRENGTH

1975 ◽  
Vol 4 (9) ◽  
pp. 931-934 ◽  
Author(s):  
Seishi Yajima ◽  
Josaburo Hayashi ◽  
Mamoru Omori
Keyword(s):  
Silicon Carbide ◽  
Tensile Strength ◽  
Silicon Carbide Fiber ◽  
High Tensile Strength

STRUCTURAL ANALYSIS IN CONTINUOUS SILICON CARBIDE FIBER OF HIGH TENSILE STRENGTH

1975 ◽  
Vol 4 (12) ◽  
pp. 1209-1212 ◽  
Author(s):  
Seishi Yajima ◽  
Kiyohito Okamura ◽  
Josaburo Hayashi
Keyword(s):  
Silicon Carbide ◽  
Tensile Strength ◽  
Structural Analysis ◽  
Silicon Carbide Fiber ◽  
High Tensile Strength

Development of high tensile strength silicon carbide fibre using an organosilicon polymer precursor

Nature ◽  
1978 ◽  
Vol 273 (5663) ◽  
pp. 525-527 ◽  
Author(s):  
S. YAJIMA ◽  
Y. HASEGAWA ◽  
K. OKAMURA ◽  
T. MATSUZAWA
Keyword(s):  
Silicon Carbide ◽  
Tensile Strength ◽  
Polymer Precursor ◽  
High Tensile Strength ◽  
Organosilicon Polymer ◽  
Silicon Carbide Fibre

Development of a silicon carbide fibre with high tensile strength

Nature ◽  
1976 ◽  
Vol 261 (5562) ◽  
pp. 683-685 ◽  
Author(s):  
S. YAJIMA ◽  
J. HAYASHI ◽  
M. OMORI ◽  
K. OKAMURA
Keyword(s):  
Silicon Carbide ◽  
Tensile Strength ◽  
High Tensile Strength ◽  
Silicon Carbide Fibre

TEM of grain growth and phase transformations during creep of SCS-6 silicon carbide fibers

1995 ◽  
Vol 53 ◽  
pp. 350-351
Author(s):  
L. A. Giannuzzi ◽  
C. A. Lewinsohn ◽  
C. E. Bakis ◽  
R. E. Tressler
Keyword(s):  
Silicon Carbide ◽  
Creep Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Primary Creep ◽  
Excess Carbon ◽  
Silicon Carbide Fibers ◽  
Sic Fiber ◽  
Carbon Core ◽  
Grain Width

The SCS-6 SiC fiber is a 142 μm diameter fiber consisting of four distinct regions of βSiC. These SiC regions vary in excess carbon content ranging from 10 a/o down to 5 a/o in the SiC1 through SiC3 region. The SiC4 region is stoichiometric. The SiC sub-grains in all regions grow radially outward from the carbon core of the fiber during the chemical vapor deposition processing of these fibers. In general, the sub-grain width changes from 50nm to 250nm while maintaining an aspect ratio of ~10:1 from the SiC1 through the SiC4 regions. In addition, the SiC shows a <110> texture, i.e., the {111} planes lie ±15° along the fiber axes. Previous has shown that the SCS-6 fiber (as well as the SCS-9 and the developmental SCS-50 μm fiber) undergoes primary creep (i.e., the creep rate constantly decreases as a function of time) throughout the lifetime of the creep test.

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