scholarly journals Approaching Dissolved Species in Ammonoacidic GaN Crystal Growth: A Combined Solution NMR and Computational Study

2020 ◽  
Vol 26 (31) ◽  
pp. 7008-7017
Author(s):  
Peter Becker ◽  
Tanakorn Wonglakhon ◽  
Dirk Zahn ◽  
Dietrich Gudat ◽  
Rainer Niewa
Keyword(s):  
Crystal Growth ◽  
Computational Study ◽  
Solution Nmr ◽  
Dissolved Species ◽  
Combined Solution ◽  
Gan Crystal

Three Solid Modifications of Ba[Ga(NH2)4]2: A Soluble Intermediate in Ammonothermal GaN Crystal Growth

2017 ◽  
Vol 2017 (5) ◽  
pp. 902-909 ◽  
Author(s):  
Jan Hertrampf ◽  
Nicolas S. A. Alt ◽  
Eberhard Schlücker ◽  
Rainer Niewa
Keyword(s):  
Crystal Growth ◽  
Gan Crystal

Novel alkali metal amidogallates as intermediates in ammonothermal GaN crystal growth

2014 ◽  
Vol 403 ◽  
pp. 22-28 ◽  
Author(s):  
Shiyu Zhang ◽  
Nicolas S.A. Alt ◽  
Eberhard Schlücker ◽  
Rainer Niewa
Keyword(s):  
Crystal Growth ◽  
Alkali Metal ◽  
Gan Crystal

scholarly journals Current status of GaN crystal growth by sublimation sandwich technique

1998 ◽  
Vol 3 ◽  
Author(s):  
P. G. Baranov ◽  
E. N. Mokhov ◽  
A. O. Ostroumov ◽  
M. G. Ramm ◽  
M. S. Ramm ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Growth Process ◽  
Growth Conditions ◽  
Current Status ◽  
Gaseous Species ◽  
Double Crystal ◽  
Paramagnetic Resonance ◽  
Sandwich Technique ◽  
Microscopy Technique ◽  
Gan Crystal

The current status of GaN crystal growth using the Sublimation Sandwich Technique is discussed in the paper. We use modeling to analyze gas dynamics in the reactor and the supply of the main gaseous species into the growth cell under growth conditions used in experiments. Important features of growth process — non-equilibrium cracking of ammonia, partial sticking of ammonia at the growing surface and kinetic limitation of GaN thermal decomposition — are taken into account in the model. Growth is carried out on sapphire and 6H-SiC substrates in ammonia atmosphere using a Ga/GaN mixture as the group-III element source. Single crystals of GaN of size 15×15 mm and up to 0.5 mm thick are normally grown with the optimized growth rates of 0.25-0.35 mm/h. The GaN crystals are characterized by photoluminescence, by the Color Cathodoluminescence Scanning Electron Microscopy technique, by differential double-crystal and triple-crystal X-ray diffractometry, and by electron paramagnetic resonance. Mechanisms of sublimation growth of GaN and physical limitations of the growth process are discussed.

scholarly journals Intermediates in Ammonothermal GaN Crystal Growth under Ammonoacidic Conditions (Eur. J. Inorg. Chem. 31/2013)

2013 ◽  
Vol 2013 (31) ◽  
pp. n/a-n/a ◽  
Author(s):  
Shiyu Zhang ◽  
Frauke Hintze ◽  
Wolfgang Schnick ◽  
Rainer Niewa
Keyword(s):  
Crystal Growth ◽  
Gan Crystal

High-Quality GaN Crystal Growth Using Flux-Film-Coated LPE with Na Flux

2020 ◽  
Vol 55 (8) ◽  
pp. 2000042
Author(s):  
Yelim Song ◽  
Fumio Kawamura ◽  
Takashi Taniguchi ◽  
Kiyoshi Shimamura ◽  
Naoki Ohashi
Keyword(s):  
Crystal Growth ◽  
High Quality ◽  
Gan Crystal
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