Covalent Reactions on Chemical Vapor Deposition Grown Graphene Studied by Surface-Enhanced Raman Spectroscopy

2016 ◽  
Vol 22 (15) ◽  
pp. 5404-5408 ◽  
Author(s):  
Petr Kovaříček ◽  
Zdeněk Bastl ◽  
Václav Valeš ◽  
Martin Kalbac
Keyword(s):  
Raman Spectroscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Surface Enhanced Raman Spectroscopy ◽  
Surface Enhanced ◽  
Surface Enhanced Raman ◽  
Grown Graphene

Surface‐enhanced Raman spectroscopy of chemical vapor deposited diamond films

1990 ◽  
Vol 56 (14) ◽  
pp. 1320-1322 ◽  
Author(s):  
Diane S. Knight ◽  
Ronald Weimer ◽  
Lawrence Pilione ◽  
William B. White
Keyword(s):  
Raman Spectroscopy ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Surface Enhanced Raman Spectroscopy ◽  
Surface Enhanced ◽  
Chemical Vapor Deposited ◽  
Surface Enhanced Raman

scholarly journals Active Phase of Cobalt Oxide (Co3O4) as a Promising Catalyst for Graphene Growth by Alcohol Catalytic Chemical Vapor Deposition

2020 ◽  
Vol 8 (6) ◽  
pp. 2061-2065
Keyword(s):  
Raman Spectroscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Vapour Deposition ◽  
Annealing Temperature ◽  
Chemical Vapour ◽  
Chemical Vapor ◽  
Graphene Growth ◽  
Grown Graphene

The presence of active catalyst during graphene growth by alcohol catalytic chemical vapour deposition is a compulsory. This study is aimed to validate the effect of annealing temperature for the formation of active cobalt oxide (Co3O4 ) film on the graphene growth by alcohol catalytic chemical vapour deposition technique. Active Co3O4 film was prepared on silicon wafers by sol-gel process, using cobalt acetate tetrahydrate as the precursor compound and absolute ethanol as the solvent. The active Co3O4 phase was achieved by annealing process at 450, 500, 550 and 600 °C. The graphene is grown from active Co3O4 film under 900 °C of chemical vapor deposition (CVD) processing temperature for 5 minutes. The obtained Co3O4 was characterized by x-ray diffraction and Raman spectroscopy. The as-grown graphene from active Co3O4 film annealed at 450 ⁰C was characterized by Raman spectroscopy and field emission scanning electron microscope (FESEM). The results demonstrate that spinel type cubic structure of Co3O4 could be produced at the varied annealing temperatures but the optimum XRD result was at 500 ⁰C annealing temperature. The presence of active Co3O4 phase was supported with the exhibited peaks of four Raman-active phonon modes in the Raman spectra. The quality of as-grown graphene determined from the ratio of 2D-band over G-band intensities is 1.010; an indication of few layers of graphene. Active Co3O4 film is able to produce good quality of graphene comparable with Ni and Cu catalysts. And graphene can be used in many devices, including electronic device, energy storage device, power device, and others.

scholarly journals Nano-Physical Characterization of Chemical Vapor Deposition-Grown Monolayer Graphene for High Performance Electrode: Raman, Surface-Enhanced Raman Spectroscopy, and Electrostatic Force Microscopy Studies

Nanomaterials ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 2839
Author(s):  
Won-Hwa Park
Keyword(s):  
Raman Spectroscopy ◽  
Carrier Mobility ◽  
Electrostatic Force ◽  
Chemical Vapor ◽  
Surface Enhanced Raman Spectroscopy ◽  
Monolayer Graphene ◽  
Force Microscopy ◽  
Surface Enhanced ◽  
Surface Enhanced Raman ◽  
Cu Foil

To achieve high-quality chemical vapor deposition of monolayer graphene electrodes (CVD-MG), appropriate characterization at each fabrication step is essential. In this article, (1) Raman spectroscopy/microscopy are employed to unravel the contact effect between the CVD-MG and Cu foil in suspended/supported formation. (2) The Surface-Enhanced Raman spectroscopy (SERS) system is described, unveiling the presence of a z-directional radial breathing-like mode (RBLM) around 150 cm−1, which matches the Raman shift of the radial breathing mode (RBM) from single-walled carbon nanotubes (SWCNTs) around 150 cm−1. This result indicates the CVD-MG located between the Au NPs and Au film is not flat but comprises heterogeneous protrusions of some domains along the z-axis. Consequently, the degree of carrier mobility can be influenced, as the protruding domains result in lower carrier mobility due to flexural phonon–electron scattering. A strongly enhanced G-peak domain, ascribed to the presence of scrolled graphene nanoribbons (sGNRs), was observed, and there remains the possibility for the fabrication of sGNRs as sources of open bandgap devices. (3) Electrostatic force microscopy (EFM) is used for the measurement of surface charge distribution of graphene at the nanoscale and is crucial in substantiating the electrical performance of CVD-MG, which was influenced by the surface structure of the Cu foil. The ripple (RP) structures were determined using EFM correlated with Raman spectroscopy, exhibiting a higher tapping amplitude which was observed with structurally stable and hydrophobic RPs with a threading type than surrounding RPs. (4) To reduce the RP density and height, a plausible fabrication could be developed that controls the electrical properties of the CVD-MG by tuning the cooling rate.

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