An Unsymmetrically π-Extended Porphyrin-Based Single-Crystal Field-Effect Transistor and Its Anisotropic Carrier-Transport Behavior

2012 ◽  
Vol 19 (7) ◽  
pp. 2247-2251 ◽  
Author(s):  
Soojung Choi ◽  
Seung Hyun Chae ◽  
Mai Ha Hoang ◽  
Kyung Hwan Kim ◽  
Jung A Huh ◽  
...  
2016 ◽  
Vol 16 (4) ◽  
pp. 3267-3272
Author(s):  
Masatoshi Sakai ◽  
Norifumi Moritoshi ◽  
Shigekazu Kuniyoshi ◽  
Hiroshi Yamauchi ◽  
Kazuhiro Kudo ◽  
...  

The effect of an applied gate electric field on the charge-order phase in β-(BEDT-TTF)2PF6 single-crystal field-effect transistor structure was observed at around room temperature by technical improvement with respect to sample preparation and electrical measurements. A relatively slight but systematic increase of the electrical conductance induced by the applied gate electric field and its temperature dependence was observed at around the metal-insulator transition temperature (TMI). The temperature dependence of the modulated electrical conductance demonstrated that TMI was shifted toward the lower side by application of a gate electric field, which corresponds to partial dissolution of the charge-order phase. The thickness of the partially dissolved charge order region was estimated to be several score times larger than the charge accumulation region.


2006 ◽  
Vol 89 (15) ◽  
pp. 152110 ◽  
Author(s):  
Nobuya Hiroshiba ◽  
Ryotaro Kumashiro ◽  
Katsumi Tanigaki ◽  
Taishi Takenobu ◽  
Yoshihiro Iwasa ◽  
...  

2008 ◽  
Vol 112 (21) ◽  
pp. 7968-7971 ◽  
Author(s):  
Phuong-T. T. Pham ◽  
Yu Xia ◽  
C. Daniel Frisbie ◽  
Mamoun M. Bader

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