Toward the Intrinsic Superiority of Aligned One‐Dimensional TiO 2 Nanostructures: the Role of Defect States in Electron Transport Process

2020 ◽  
Vol 7 (21) ◽  
pp. 4390-4397
Author(s):  
Zhijuan He ◽  
Yanyang Han ◽  
Shanshan Liu ◽  
Wei Cui ◽  
Yunping Qiao ◽  
...  
2014 ◽  
Vol 16 (17) ◽  
pp. 7754-7763 ◽  
Author(s):  
Masahiro Funahashi ◽  
Akinari Sonoda

An electron transport process in columnar phases of perylene tetracarboxylic bisimide derivatives is analyzed based on the one-dimensional Gaussian disorder model.


Nanoscale ◽  
2020 ◽  
Vol 12 (45) ◽  
pp. 23028-23035
Author(s):  
Artem R. Khabibullin ◽  
Alexander L. Efros ◽  
Steven C. Erwin

Theoretical modeling of wavefunction overlap in nanocrystal solids elucidates the important role played by ligands in electron transport.


2011 ◽  
Vol 35 (1) ◽  
pp. 15-27
Author(s):  
Zoran Ivić ◽  
Željko Pržulj

Adiabatic large polarons in anisotropic molecular crystals We study the large polaron whose motion is confined to a single chain in a system composed of the collection of parallel molecular chains embedded in threedimensional lattice. It is found that the interchain coupling has a significant impact on the large polaron characteristics. In particular, its radius is quite larger while its effective mass is considerably lighter than that estimated within the one-dimensional models. We believe that our findings should be taken into account for the proper understanding of the possible role of large polarons in the charge and energy transfer in quasi-one-dimensional substances.


Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 1032
Author(s):  
Anirban Naskar ◽  
Rabi Khanal ◽  
Samrat Choudhury

The electronic structure of a series perovskites ABX3 (A = Cs; B = Ca, Sr, and Ba; X = F, Cl, Br, and I) in the presence and absence of antisite defect XB were systematically investigated based on density-functional-theory calculations. Both cubic and orthorhombic perovskites were considered. It was observed that for certain perovskite compositions and crystal structure, presence of antisite point defect leads to the formation of electronic defect state(s) within the band gap. We showed that both the type of electronic defect states and their individual energy level location within the bandgap can be predicted based on easily available intrinsic properties of the constituent elements, such as the bond-dissociation energy of the B–X and X–X bond, the X–X covalent bond length, and the atomic size of halide (X) as well as structural characteristic such as B–X–B bond angle. Overall, this work provides a science-based generic principle to design the electronic states within the band structure in Cs-based perovskites in presence of point defects such as antisite defect.


2000 ◽  
Vol 609 ◽  
Author(s):  
Paul Stradins ◽  
Akihisa Matsuda

ABSTRACTThe drift and diffusion in the presence of charged defects and photocarriers trapped in the tail states is re-examined. In continuity equations, diffusive and drift currents are related to free particles while the Poisson equation includes all charges. In order to make use of ambipolar diffusion approximation, the mobilities and diffusion coefficients should be attributed to the total electron and hole populations making them strongly particle-number dependent. Due to the asymmetry of the conduction and valence band tails, almost all trapped electrons reside in negatively charged defects (D−). A simple model of photocarrier traffic via tail and defect states allows to establish the effective mobility values and coefficients in Einstein relations. In a photocarrier grating experiment, grating of D− is counterbalanced by the grating of trapped holes. Nevertheless, electrons remain majority carriers, allowing the measurement of minority carrier diffusion length, but analysis is needed to relate the latter with μτ product.


1956 ◽  
Vol 222 (1) ◽  
pp. 497-509 ◽  
Author(s):  
I.R. Lehman ◽  
Alvin Nason
Keyword(s):  

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