scholarly journals Chemiresistor Arrays Prepared by Simple and Fast Vapor-Phase Thiol Place-Exchange Functionalization of Gold Monolayer-Protected Cluster Films

2016 ◽  
Vol 3 (8) ◽  
pp. 1230-1236 ◽  
Author(s):  
Yang Yang ◽  
Laura B. Cornwell ◽  
Francisco J. Ibañez ◽  
Francis P. Zamborini
Keyword(s):  
Vapor Phase ◽  
Place Exchange

Planar defects in ordered (Ga,In)P

1988 ◽  
Vol 46 ◽  
pp. 902-903
Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy
Keyword(s):  
Electron Diffraction ◽  
Vapor Phase ◽  
Growth Direction ◽  
High Density ◽  
Ordered Structure ◽  
Planar Defects ◽  
Diffraction Patterns ◽  
Ternary Semiconductors ◽  
Anion Species ◽  
Metallic Vapor

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.

191. Planar Waveguide Interferometers for Vapor Phase Sensing

1999 ◽  
Author(s):  
C. Joseph ◽  
D. Campbell ◽  
J. Suggs ◽  
J. Moore ◽  
N. Hartman
Keyword(s):  
Vapor Phase ◽  
Planar Waveguide

"PURIFICATION EFFECTS" IN ZINC SELENIDE CRYSTALS DOPED WITH YTTERBIUM FROM VAPOR PHASE

2016 ◽  
Vol 75 (3) ◽  
pp. 279-284 ◽  
Author(s):  
V. P. Makhniy ◽  
O. V. Kinzersky ◽  
I. M. Senko
Keyword(s):  
Zinc Selenide ◽  
Vapor Phase

Solvent-Free Powder Synthesis and MOF-CVD Thin Films of the Mesoporous Metal-Organic Framework MAF-6

2019 ◽  
Author(s):  
Timothée Stassin ◽  
Ivo Stassen ◽  
Joao Marreiros ◽  
Alexander John Cruz ◽  
Rhea Verbeke ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metal Organic Framework ◽  
Chemical Vapor ◽  
Uptake Capacity ◽  
Powder Synthesis ◽  
Crystalline Films ◽  
Metal Organic ◽  
Mesoporous Metal ◽  
First Time ◽  
Organic Framework

A simple solvent- and catalyst-free method is presented for the synthesis of the mesoporous metal-organic framework (MOF) MAF-6 (RHO-Zn(eIm)2) based on the reaction of ZnO with 2-ethylimidazole vapor at temperatures ≤ 100 °C. By translating this method to a chemical vapor deposition (CVD) protocol, mesoporous crystalline films could be deposited for the first time entirely from the vapor phase. A combination of PALS and Kr physisorption measurements confirmed the porosity of these MOF-CVD films and the size of the MAF-6 supercages (diam. ~2 nm), in close agreement with powder data and calculations. MAF-6 powders and films were further characterized by XRD, TGA, SEM, FTIR, PDF and EXAFS. The exceptional uptake capacity of the mesoporous MAF-6 in comparison to the microporous ZIF-8 is demonstrated by vapor-phase loading of a molecule larger than the ZIF-8 windows.

Vapor-Phase Infrared Absorptivity Coefficient of O,S-Diethyl Methylphosphonothioate

2009 ◽  
Author(s):  
Barry R. Williams ◽  
Melissa S. Hulet ◽  
Alan C. Samuels ◽  
Jr Miles ◽  
Ronald W.
Keyword(s):  
Vapor Phase
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