Aberration-Corrected Transmission Electron Microscopy and In Situ XAFS Structural Characterization of Pt/γ-Al2 O3 Nanoparticles

ChemCatChem ◽  
2015 ◽  
Vol 7 (22) ◽  
pp. 3779-3787 ◽  
Author(s):  
Wharton Sinkler ◽  
Sergio I. Sanchez ◽  
Steven A. Bradley ◽  
Jianguo Wen ◽  
Bhoopesh Mishra ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Structural Characterization ◽  
Transmission Electron ◽  
In Situ Xafs ◽  
Aberration Corrected

Structural characterization of SmMn2GeO7 single microcrystals by electron microscopy

2005 ◽  
Vol 61 (1) ◽  
pp. 11-16 ◽  
Author(s):  
E. A. Juarez-Arellano ◽  
J. M. Ochoa ◽  
L. Bucio ◽  
J. Reyes-Gasga ◽  
E. Orozco
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Structural Characterization ◽  
Point Group ◽  
Spherical Mirror ◽  
Quaternary Compound ◽  
Cell Parameters ◽  
Transmission Electron ◽  
Electron Energy Loss

Single microcrystals of the new compound samarium dimanganese germanium oxide, SmMn2GeO7, were grown using the flux method in a double spherical mirror furnace (DSMF). The micrometric crystals were observed and chemically analysed with scanning electron microscopy (SEM) and X-ray energy dispersive spectroscopy (EDX). The structural characterization and chemical analysis of these crystals were also carried out using transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM), together with electron-energy-loss spectroscopy (EELS). We found that the new quaternary compound crystallizes in the orthorhombic system with the point group mmm (D 2h ), space group Immm (No. 71) and cell parameters a = 8.30 (10), b = 8.18 (10), c = 8.22 (10) Å and V = 558.76 Å3.

Structural Characterization of CF-PVT Grown Bulk 3C-SiC

2008 ◽  
Vol 600-603 ◽  
pp. 67-70 ◽  
Author(s):  
Alkyoni Mantzari ◽  
Frédéric Mercier ◽  
Maher Soueidan ◽  
Didier Chaussende ◽  
Gabriel Ferro ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Structural Properties ◽  
Structural Characterization ◽  
Stacking Faults ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Transmission Electron ◽  
Continuous Feed

The aim of the present work is to study the structural properties of 3C-SiC which is grown on (0001) 6H-SiC and on (100) 3C-SiC (Hoya) seeds using the Continuous Feed Physical Vapor Transport (CF-PVT) method. Transmission Electron Microscopy (TEM) observations confirm that the overgrown layer is of the 3C-SiC polytype. In the case of the 6H-SiC substrate, microtwins (MTs), stacking faults (SFs) and dislocations (D) are observed at the substrate-overgrown interface with most of the dislocations annihilating within the first few µm from the interface. In the case of 3C-SiC crystals grown on 3C seeds, repeated SFs are formed locally and also coherent (111) twins of 3C-SiC are frequently observed near the surface. The SF density is reduced at the uppermost part of the grown material.

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