Kinetic and growth parameters of Arthrospira (Spirulina) platensis cultivated in tubular photobioreactor under different cell circulation systems

2011 ◽  
Vol 109 (2) ◽  
pp. 444-450 ◽  
Author(s):  
Lívia S. Ferreira ◽  
Mayla S. Rodrigues ◽  
Attilio Converti ◽  
Sunao Sato ◽  
João C.M. Carvalho
Keyword(s):  
Spirulina Platensis ◽  
Growth Parameters ◽  
Tubular Photobioreactor

CO2 from alcoholic fermentation for continuous cultivation of Arthrospira (Spirulina) platensis in tubular photobioreactor using urea as nitrogen source

2011 ◽  
Vol 27 (3) ◽  
pp. 650-656 ◽  
Author(s):  
Marcelo C. Matsudo ◽  
Raquel P. Bezerra ◽  
Attilio Converti ◽  
Sunao Sato ◽  
João Carlos M. Carvalho
Keyword(s):  
Nitrogen Source ◽  
Spirulina Platensis ◽  
Alcoholic Fermentation ◽  
Continuous Cultivation ◽  
Tubular Photobioreactor

A new approach to ammonium sulphate feeding for fed-batch Arthrospira (Spirulina) platensis cultivation in tubular photobioreactor

2010 ◽  
Vol 26 (5) ◽  
pp. 1271-1277 ◽  
Author(s):  
Lívia S. Ferreira ◽  
Mayla S. Rodrigues ◽  
Attilio Converti ◽  
Sunao Sato ◽  
João Carlos M. Carvalho
Keyword(s):  
Ammonium Sulphate ◽  
Spirulina Platensis ◽  
Fed Batch ◽  
New Approach ◽  
Tubular Photobioreactor

scholarly journals Tubular photobioreactor design and determining the technological parameters of culturing spirulina platensis algae by this equipment in Vietnam

2017 ◽  
Vol 20 (K1) ◽  
pp. 73-77
Author(s):  
Trinh Van Dung ◽  
Bui Ngoc Pha ◽  
Nguyen Si Xuan An
Keyword(s):  
Temperature Change ◽  
Flow Rate ◽  
Spirulina Platensis ◽  
Biomass Yield ◽  
Climate Condition ◽  
Technological Parameters ◽  
Tubular Photobioreactor ◽  
Photobioreactor Design ◽  
And Performance

In this study, we present the design and performance of a tubular photobioreactor (TPBR). We also determine the technological parameters of culturing S. platensis algae using a 30-litre volume TPBR in Vietnam’s climate condition. When S. platensis is cultured in the Zarrouk medium, there should be an appropriate agitation mode to help them adjust to the temperature change, which ranges from 25 oC to 40 oC. Therefore, TPBR should be agitated by an aeration at a flow rate of 10 LPM. pH is maintained at the range of 8,5 – 10 by aerating CO2 once per day for 30 minutes, at a flow rate of 2 LPM. Biomass yield is 0,75 – 1,0 gram per liter. These results are the basis for tubular photobioreactor design in industrial S. platensis production.

Arthrospira (Spirulina) platensis cultivation in tubular photobioreactor: Use of no-cost CO2 from ethanol fermentation

2012 ◽  
Vol 92 ◽  
pp. 379-385 ◽  
Author(s):  
L.S. Ferreira ◽  
M.S. Rodrigues ◽  
A. Converti ◽  
S. Sato ◽  
J.C.M. Carvalho
Keyword(s):  
Ethanol Fermentation ◽  
Spirulina Platensis ◽  
Tubular Photobioreactor

scholarly journals Cultivation of Spirulina platensis using WWTP effluent and CO2 emission of papermill in tubular photobioreactor

2019 ◽  
Author(s):  
Prima Besty Asthary ◽  
Saepulloh ◽  
Kristaufan Joko Pramono ◽  
Toni Rachmanto ◽  
Yusup Setiawan
Keyword(s):  
Spirulina Platensis ◽  
Co2 Emission ◽  
Tubular Photobioreactor ◽  
Wwtp Effluent

Studies of Ge/Si(100) and Observation of Atomic Steps on Si(100) using Biassed Secondary Electron Imaging in a UHV STEM

1990 ◽  
Vol 48 (1) ◽  
pp. 308-309
Author(s):  
Mohan Krishnamurthy ◽  
Jeff S. Drucker ◽  
John A. Venablest
Keyword(s):  
Secondary Electron ◽  
Critical Thickness ◽  
Surface Defects ◽  
Film Growth ◽  
Growth Parameters ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Surface Steps ◽  
Epitaxial Crystal Growth ◽  
Electron Imaging

Secondary Electron Imaging (SEI) has become a useful mode of studying surfaces in SEM[1] and STEM[2,3] instruments. Samples have been biassed (b-SEI) to provide increased sensitivity to topographic and thin film deposits in ultra high vacuum (UHV)-SEM[1,4]; but this has not generally been done in previous STEM studies. The recently developed UHV-STEM ( codenamed MIDAS) at ASU has efficient collection of secondary electrons using a 'parallelizer' and full sample preparation system[5]. Here we report in-situ deposition and annealing studies on the Ge/Si(100) epitaxial system, and the observation of surface steps on vicinal Si(100) using b-SEI under UHV conditions in MIDAS.Epitaxial crystal growth has previously been studied using SEM and SAM based experiments [4]. The influence of surface defects such as steps on epitaxial growth requires study with high spatial resolution, which we report for the Ge/Si(100) system. Ge grows on Si(100) in the Stranski-Krastonov growth mode wherein it forms pseudomorphic layers for the first 3-4 ML (critical thickness) and beyond which it clusters into islands[6]. In the present experiment, Ge was deposited onto clean Si(100) substrates misoriented 1° and 5° toward <110>. This was done using a mini MBE Knudsen cell at base pressure ~ 5×10-11 mbar and at typical rates of 0.1ML/min (1ML =0.14nm). Depositions just above the critical thickness were done for substrates kept at room temperature, 375°C and 525°C. The R T deposits were annealed at 375°C and 525°C for various times. Detailed studies were done of the initial stages of clustering into very fine (∼1nm) Ge islands and their subsequent coarsening and facetting with longer anneals. From the particle size distributions as a function of time and temperature, useful film growth parameters have been obtained. Fig. 1 shows a b-SE image of Ge island size distribution for a R T deposit and anneal at 525°C. Fig.2(a) shows the distribution for a deposition at 375°C and Fig.2(b) shows at a higher magnification a large facetted island of Ge. Fig.3 shows a distribution of very fine islands from a 525°C deposition. A strong contrast is obtained from these islands which are at most a few ML thick and mottled structure can be seen in the background between the islands, especially in Fig.2(a) and Fig.3.

Light and oxygen stress in Spirulina platensis (cyanobacteria) grown outdoors in tubular reactors

1996 ◽  
Vol 97 (1) ◽  
pp. 175-179 ◽  
Author(s):  
Avigad Vonshak ◽  
Giuseppe Torzillo ◽  
Paola Accolla ◽  
Luisa Tomaselli
Keyword(s):  
Spirulina Platensis ◽  
Oxygen Stress ◽  
Tubular Reactors
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