Isolation of a fluffy mutant ofAspergillus niger from chemostat culture and its potential use as a morphologically stable host for protein production

2004 ◽  
Vol 86 (3) ◽  
pp. 301-307 ◽  
Author(s):  
Peter J. I. van de Vondervoort ◽  
Bjarne R. Poulsen ◽  
George J. G. Ruijter ◽  
Tina Schuleit ◽  
Jaap Visser ◽  
...  
1995 ◽  
Vol 133 (3) ◽  
pp. 245-251 ◽  
Author(s):  
Julie M. Withers ◽  
Marilyn G. Wiebe ◽  
Geoffrey D. Robson ◽  
David Osborne ◽  
Geoffrey Turner ◽  
...  

Author(s):  
A. Baronnet ◽  
M. Amouric

The origin of mica polytypes has long been a challenging problem for crystal- lographers, mineralogists and petrologists. From the petrological point of view, interest in this field arose from the potential use of layer stacking data to furnish further informations about equilibrium and/or kinetic conditions prevailing during the crystallization of the widespread mica-bearing rocks. From the compilation of previous experimental works dealing with the occurrence domains of the various mica "polymorphs" (1Mr, 1M, 2M1, 2M2 and 3T) within water-pressure vs temperature fields, it became clear that most of these modifications should be considered as metastable for a fixed mica species. Furthermore, the natural occurrence of long-period (or complex) polytypes could not be accounted for by phase considerations. This highlighted the need of a more detailed kinetic approach of the problem and, in particular, of the role growth mechanisms of basal faces could play in this crystallographic phenomenon.


Author(s):  
Z. Liliental-Weber ◽  
C. Nelson ◽  
R. Ludeke ◽  
R. Gronsky ◽  
J. Washburn

The properties of metal/semiconductor interfaces have received considerable attention over the past few years, and the Al/GaAs system is of special interest because of its potential use in high-speed logic integrated optics, and microwave applications. For such materials a detailed knowledge of the geometric and electronic structure of the interface is fundamental to an understanding of the electrical properties of the contact. It is well known that the properties of Schottky contacts are established within a few atomic layers of the deposited metal. Therefore surface contamination can play a significant role. A method for fabricating contamination-free interfaces is absolutely necessary for reproducible properties, and molecularbeam epitaxy (MBE) offers such advantages for in-situ metal deposition under UHV conditions


1985 ◽  
Vol 4 ◽  
pp. 116-123 ◽  
Author(s):  
P STEHLE ◽  
S ALBERS ◽  
I AMBERGER ◽  
P PFAENDER ◽  
P FURST

1971 ◽  
Vol 10 (03) ◽  
pp. 245-251 ◽  
Author(s):  
P. Richards ◽  
W. C. Eckelman

SummaryThe full potential use of technetium has not been achieved despite its ideal physical properties, dosimetry and availability because of the complex preparations required for 99mTc radiopharmaceuticals. One of the goals of our work is to develop techniques for the preparation of high-purity 99mTc compounds which can be easily prepared, ideally by adding pertechnetate to a prepared solution.The use of stannous ion as reducing agent for technetium makes it possible to obtain such one-step, high-purity products. All non-radioactive components can be premixed in a single vial before addition of the radioactive pertechnetate. No final pH adjustment, further chemical manipulation or purification is required.Procedures for two instantly labeled compounds have been developed to date: 99mTc DTPA and 99mTc HSA. The 99mTc DTPA is prepared by adding pertechnetate to a previously prepared solution of stannous ion and CaNa3 DTPA which has been stored at pH 4. The 99mTc HSA is prepared by adding pertechnetate to a solution of stannous ion and HSA. The parametric variations and analytical techniques involved in formulating these procedures are described. It appears that development of kits for other biologically interesting compounds may be possible using similar procedures.


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