Highly Efficient, Reproducible, Uniform (CH3NH3)PbI3Layer by Processing Additive Dripping for Solution-Processed Planar Heterojunction Perovskite Solar Cells

2016 ◽  
Vol 11 (17) ◽  
pp. 2399-2405 ◽  
Author(s):  
Hansol Kim ◽  
Hanbin Jeong ◽  
Jae Kwan Lee
ACS Photonics ◽  
2018 ◽  
Vol 5 (10) ◽  
pp. 4104-4110 ◽  
Author(s):  
Yaxin Gao ◽  
Yanan Dong ◽  
Keqing Huang ◽  
Chujun Zhang ◽  
Biao Liu ◽  
...  

2017 ◽  
Vol 28 (1) ◽  
pp. 13-18 ◽  
Author(s):  
Zhi-Kai Yu ◽  
Wei-Fei Fu ◽  
Wen-Qing Liu ◽  
Zhong-Qiang Zhang ◽  
Yu-Jing Liu ◽  
...  

2016 ◽  
Vol 9 (1) ◽  
pp. 12-30 ◽  
Author(s):  
Hobeom Kim ◽  
Kyung-Geun Lim ◽  
Tae-Woo Lee

This review article gives an overview of progress in planar heterojunction perovskite solar cells and the roles of interfacial layers in the device, and suggests a practical strategy to fabricate highly efficient and flexible planar heterojunction perovskite solar cells.


2014 ◽  
Vol 2 (32) ◽  
pp. 12754-12760 ◽  
Author(s):  
Sudam Chavhan ◽  
Oscar Miguel ◽  
Hans-Jurgen Grande ◽  
Victoria Gonzalez-Pedro ◽  
Rafael S. Sánchez ◽  
...  

The viability of using solution-processed CuSCN films as inorganic hole selective contacts in perovskite solar cells is demonstrated, by reaching a power conversion efficiency of 6.4% in planar heterojunction-based devices.


Nanomaterials ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 3090
Author(s):  
Jun Choi ◽  
Young Ki Park ◽  
Hee Dong Lee ◽  
Seok Il Hong ◽  
Woosung Lee ◽  
...  

A robust electron transport layer (ETL) is an essential component in planar-heterojunction perovskite solar cells (PSCs). Herein, a sol-gel-driven ZrSnO4 thin film is synthesized and its optoelectronic properties are systematically investigated. The optimized processing conditions for sol-gel synthesis produce a ZrSnO4 thin film that exhibits high optical transmittance in the UV-Vis-NIR range, a suitable conduction band maximum, and good electrical conductivity, revealing its potential for application in the ETL of planar-heterojunction PSCs. Consequently, the ZrSnO4 ETL-based devices deliver promising power conversion efficiency (PCE) up to 19.05% from CH3NH3PbI3-based planar-heterojunction devices. Furthermore, the optimal ZrSnO4 ETL also contributes to decent long-term stability of the non-encapsulated device for 360 h in an ambient atmosphere (T~25 °C, RH~55%,), suggesting great potential of the sol-gel-driven ZrSnO4 thin film for a robust solution-processed ETL material in high-performance PSCs.


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