Incubation phenomena during UV-pulse excimer laser processing of silicone elastomers

2016 ◽  
Vol 134 (9) ◽  
Author(s):  
Konstantin Kolev ◽  
Dragomir Tatchev ◽  
Stephan Armyanov ◽  
Eugenia Valova ◽  
Kitty Baert ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Processing ◽  
Silicone Elastomers ◽  
Pulse Excimer Laser

scholarly journals Surface Texturing of Polyethylene Terephthalate Induced by Excimer Laser in Silver Nanoparticle Colloids

Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3263
Author(s):  
Jakub Siegel ◽  
Tatiana Savenkova ◽  
Jana Pryjmaková ◽  
Petr Slepička ◽  
Miroslav Šlouf ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Polyethylene Terephthalate ◽  
Excimer Laser ◽  
Silver Nanoparticle ◽  
Polymer Surface ◽  
Surface Texturing ◽  
Nanoparticle Distribution ◽  
Pulse Excimer Laser ◽  
Variable Surface ◽  
Variable Morphology

We report on a novel technique of surface texturing of polyethylene terephthalate (PET) foil in the presence of silver nanoparticles (AgNPs). This approach provides a variable surface morphology of PET evenly decorated with AgNPs. Surface texturing occurred in silver nanoparticle colloids of different concentrations under the action of pulse excimer laser. Surface morphology of PET immobilized with AgNPs was observed by AFM and FEGSEM. Atomic concentration of silver was determined by XPS. A presented concentration-controlled procedure of surface texturing of PET in the presence of silver colloids leads to a highly nanoparticle-enriched polymer surface with a variable morphology and uniform nanoparticle distribution.

scholarly journals Single-Grain Si TFTs Fabricated by Liquid-Si and Long-Pulse Excimer-Laser

2013 ◽  
Vol 50 (8) ◽  
pp. 49-53 ◽  
Author(s):  
R. Ishihara ◽  
J. Zhang ◽  
M. Trifunovic ◽  
M. van der Zwan ◽  
H. Takagishi ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Pulse Excimer Laser ◽  
Single Grain ◽  
Long Pulse

Finite element simulation for ultraviolet excimer laser processing of patterned Si/SiGe/Si(100) heterostructures

2010 ◽  
Vol 97 (1) ◽  
pp. 014102 ◽  
Author(s):  
J. C. Conde ◽  
E. Martín ◽  
S. Chiussi ◽  
F. Gontad ◽  
C. Serra ◽  
...  
Keyword(s):  
Finite Element ◽  
Finite Element Simulation ◽  
Excimer Laser ◽  
Laser Processing ◽  
Element Simulation

Excimer Laser Processing of Nodular Iron

1994 ◽  
Vol 9 (3) ◽  
pp. 415-427 ◽  
Author(s):  
A. Fontes ◽  
M. Jeandin ◽  
Olivier Uteza ◽  
Marc Sentis ◽  
Michel Frainais
Keyword(s):  
Excimer Laser ◽  
Laser Processing ◽  
Nodular Iron

Enhanced Energy Transport via Quartz Fibers Using 250 ns Long-Pulse Excimer Laser

1988 ◽  
pp. 101-103
Author(s):  
U. Sowada ◽  
H.-J. Kahlert ◽  
W. Mückenheim ◽  
D. Basting
Keyword(s):  
Excimer Laser ◽  
Energy Transport ◽  
Pulse Excimer Laser ◽  
Long Pulse

Amplification of high power short pulse excimer laser with beam smoothing

2011 ◽  
Vol 19 (2) ◽  
pp. 397-406
Author(s):  
赵学庆 ZHAO Xue-qing ◽  
刘晶儒 LIU Jing-ru ◽  
易爱平 YI Ai-ping ◽  
薛全喜 XUE Quan-xi ◽  
华恒祺 HUA Heng-qi ◽  
...  
Keyword(s):  
Excimer Laser ◽  
High Power ◽  
Short Pulse ◽  
Pulse Excimer Laser

Pulsed Excimer Laser Processing of AlN/GaN Thin Films

1996 ◽  
Vol 449 ◽  
Author(s):  
W. S. Wong ◽  
L. F. Schloss ◽  
G.S. Sudhir ◽  
B. P. Linder ◽  
K-M. Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Density ◽  
Excimer Laser ◽  
Laser Processing ◽  
Laser Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
Emission Peak ◽  
Dopant Activation ◽  
Pulsed Laser Annealing

ABSTRACTA KrF (248 nm) excimer laser with a 38 ns pulse width was used to study pulsed laser annealing of AIN/GaN bi-layers and dopant activation of Mg-implanted GaN thin films. For the AIN/GaN bi-layers, cathodoluminescence (CL) showed an increase in the intensity of the GaN band-edge peak at 3.47 eV after pulsed laser annealing at an energy density of 2000 mJ/cm2. Rutherford backscattering spectrometry of a Mg-implanted A1N (75 nm thick)/GaN (1.0 μm thick) thin-film heterostructure showed a 20% reduction of the 4He+ backscattering yield after laser annealing at an energy density of 400 mJ/cm2. CL measurements revealed a 410 nm emission peak indicating the incorporation of Mg after laser processing.

193 nm Excimer laser processing of Si/Ge/Si(100) micropatterns

2016 ◽  
Vol 362 ◽  
pp. 217-220 ◽  
Author(s):  
F. Gontad ◽  
J.C. Conde ◽  
S. Chiussi ◽  
C. Serra ◽  
P. González
Keyword(s):  
Excimer Laser ◽  
Laser Processing ◽  
193 Nm
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