Synthesis of copper chloride and cobalt chloride doped polyanilines and their magnetic and alternating-current transport properties

2010 ◽  
Vol 115 (5) ◽  
pp. 2911-2917 ◽  
Author(s):  
K. Gupta ◽  
G. Chakraborty ◽  
S. Ghatak ◽  
P. C. Jana ◽  
A. K. Meikap
Keyword(s):  
Transport Properties ◽  
Cobalt Chloride ◽  
Copper Chloride ◽  
Alternating Current ◽  
Current Transport

Alternating-Current Transport Properties in Nd 0.7 Sr 0.3 MnO 3 Ceramic with Secondary Phases

2012 ◽  
Vol 29 (7) ◽  
pp. 077303
Author(s):  
Shun-Sheng Chen ◽  
Chang-Ping Yang ◽  
Xiao-Jing Luo ◽  
I V Medvedeva
Keyword(s):  
Transport Properties ◽  
Alternating Current ◽  
Current Transport ◽  
Secondary Phases

Alternating-Current Transport Properties of the Interface between Nd 0.7 Sr 0.3 MnO 3 Ceramic and a Ag Electrode

2012 ◽  
Vol 29 (2) ◽  
pp. 027302 ◽  
Author(s):  
Shun-Sheng Chen ◽  
Chang-Ping Yang ◽  
Xiao-Jing Luo ◽  
K. Bärner ◽  
I. V. Medvedeva
Keyword(s):  
Transport Properties ◽  
Alternating Current ◽  
Current Transport ◽  
Ag Electrode

In-Field Current Transport Properties of 600 A-Class ${\rm GdBa}_{2}{\rm Cu}_{3}{\rm O}_{7-\delta}$ Coated Conductor Utilizing IBAD Template

2011 ◽  
Vol 21 (3) ◽  
pp. 3206-3209 ◽  
Author(s):  
Masayoshi Inoue ◽  
Rene Fuger ◽  
Kohei Higashikawa ◽  
Takanobu Kiss ◽  
Satoshi Awaji ◽  
...  
Keyword(s):  
Transport Properties ◽  
Coated Conductor ◽  
Current Transport

The Current Transport Properties of a 200 A-Class Bi-2223 Superconducting Wire at Various Temperatures and Magnetic Fields

2007 ◽  
Vol 17 (2) ◽  
pp. 3113-3116 ◽  
Author(s):  
N. Ayai ◽  
S. Kobayashi ◽  
K. Yamazaki ◽  
S. Yamade ◽  
M. Kikuchi ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Transport Properties ◽  
Current Transport ◽  
Superconducting Wire

Correlation between Current Transport and Defects in n+/p 6H-SiC Diodes

2006 ◽  
Vol 527-529 ◽  
pp. 811-814 ◽  
Author(s):  
Mariaconcetta Canino ◽  
Antonio Castaldini ◽  
Anna Cavallini ◽  
Francesco Moscatelli ◽  
Roberta Nipoti ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
Transport Properties ◽  
Current Transport ◽  
Step Bunching ◽  
Excess Current ◽  
Low Temperature Annealing ◽  
Current Voltage ◽  
P Type

This paper reports on the defects created in a 6H-SiC p-type substrate by a process of ion implantation and a quite low temperature annealing (1300 °C), suitable for the realization of the source/drain regions of a MOSFET because it does not give rise to step bunching phenomena. Current voltage measurements showed the presence of a group of diodes featured by excess current. The effects of defects under the implanted layer on the transport properties of the diodes were investigated by DLTS: four hole traps were detected in all the measured diodes; besides, a broadened peak around 550 K was detected in the diodes that show excess current.

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