Thermal stability of polypropylene/carbon nanofiber composite

2006 ◽  
Vol 100 (5) ◽  
pp. 3574-3578 ◽  
Author(s):  
Arobindo Chatterjee ◽  
B. L. Deopura
2013 ◽  
Vol 1505 ◽  
Author(s):  
Ananta Raj Adhikari ◽  
Kamal Sarkar ◽  
Karen Lozano

ABSTRACT:Studies have demonstrated that the reinforcement of polymeric matrices using nanofiller can results with better thermo-physical properties of polymer. Carbon nanofiber (CNF) is a unique quasi-one dimensional nanostructure with large numbers of edges and defects compared to carbon nanotube (CNT). Further the availability in large quantity along with lower cost makes them an important nanomaterial for future technology. We have previously used CNF in different thermoplastic polymers. In this study CNFs were used with water soluble thermoplastic aliphatic polyster polylactic acid (PLA) and studied their thermal and mechanical properties. Thermal analysis using Thermogravimetric Analysis showed enhanced thermal stability of the polymer at higher nanotube loading (>1 wt%) and decrease of thermal stability at higher loading (>10 wt%). Crystallization thermogram of PLA was modified heavily with the addition of nanofibers changing clearly from one stage to two stage crystallization. In addition, CNF facilitates the crystallization of PLA resulting in an increase of its crystallization. The mechanical testing showed the steady increase of modulus of the composites with the nanofiber content within the range of study which can be regarded as due to the change in interface property of the composites.


Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization


Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.


1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac

1994 ◽  
Vol 4 (4) ◽  
pp. 653-657
Author(s):  
B. Bonzi ◽  
M. El Khomssi ◽  
H. Lanchon-Ducauquis

1998 ◽  
Vol 08 (PR2) ◽  
pp. Pr2-63-Pr2-66 ◽  
Author(s):  
R. Varga ◽  
P. Vojtaník ◽  
A. Lovas

2016 ◽  
Vol 38 (3) ◽  
pp. 211-217
Author(s):  
G.I. Khovanets’ ◽  
◽  
O.Y. Makido ◽  
V.V. Kochubey ◽  
Y.G. Medvedevskikh ◽  
...  

Diabetes ◽  
1984 ◽  
Vol 33 (8) ◽  
pp. 745-751 ◽  
Author(s):  
D. K. Yue ◽  
S. McLennan ◽  
D. J. Handelsman ◽  
L. Delbridge ◽  
T. Reeve ◽  
...  

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