The Unique Electronic Structure of Mg2 Si: Shaping the Conduction Bands of Semiconductors with Multicenter Bonding

2017 ◽  
Vol 56 (34) ◽  
pp. 10135-10139 ◽  
Author(s):  
Hiroshi Mizoguchi ◽  
Yoshinori Muraba ◽  
Daniel C. Fredrickson ◽  
Satoru Matsuishi ◽  
Toshio Kamiya ◽  
...  
2017 ◽  
Vol 129 (34) ◽  
pp. 10269-10273 ◽  
Author(s):  
Hiroshi Mizoguchi ◽  
Yoshinori Muraba ◽  
Daniel C. Fredrickson ◽  
Satoru Matsuishi ◽  
Toshio Kamiya ◽  
...  

2014 ◽  
Vol 900 ◽  
pp. 217-221
Author(s):  
Xing Xiang Ruan ◽  
Xian Hui Zhong ◽  
Fu Chun Zhang ◽  
Wei Hu Zhang

A detailed theoretical study of electronic structure and optical properties of GaN under pressure was performed by the first-principles calculations of plane wave ultra-soft pseudo-potential method based on the density functional theory (DFT). The results indicate that Ga-N bond length becomes shorter and the valence bonds shift towards the low energy while the conduction bands towards high energy, the band gap becomes wider with the pressure increasing, and theoretical studies explained the relationship between the band edges, energy gap of GaN and pressure. In addition, the peak in band was cracked slightly, and the Ga 3d-N 2p hybridization was enhanced.


1981 ◽  
Vol 5 ◽  
Author(s):  
M. H. Sukkar ◽  
H. L. Tuller ◽  
K. H. Johnson

ABSTRACTPreliminary theoretical models for the electronic structure of grain boundaries and interfaces in polycrystalline ZnO have been constructed on the basis of self-consistent-field X-alpha scattered-wave (SCF-Xα-SW) cluster molecular-orbital calculations. The disposition and character of the interface states, relative to the valence and conduction bands of the otherwise perfect crystalline material, have been studied for clusters representing coordinatively unsaturated Zn surface sites and molecular O2 chemisorption thereon. The possible effects of the resuiting interface states on electron transport at grain boundaries in ZnO varistors have been addressed.


2014 ◽  
Vol 5 ◽  
pp. 1738-1748 ◽  
Author(s):  
Danny E P Vanpoucke ◽  
Jan W Jaeken ◽  
Stijn De Baerdemacker ◽  
Kurt Lejaeghere ◽  
Veronique Van Speybroeck

The geometric and electronic structure of the MIL-47(V) metal-organic framework (MOF) is investigated by using ab initio density functional theory (DFT) calculations. Special focus is placed on the relation between the spin configuration and the properties of the MOF. The ground state is found to be antiferromagnetic, with an equilibrium volume of 1554.70 Å3. The transition pressure of the pressure-induced large-pore-to-narrow-pore phase transition is calculated to be 82 MPa and 124 MPa for systems with ferromagnetic and antiferromagnetic chains, respectively. For a mixed system, the transition pressure is found to be a weighted average of the ferromagnetic and antiferromagnetic transition pressures. Mapping DFT energies onto a simple-spin Hamiltonian shows both the intra- and inter-chain coupling to be antiferromagnetic, with the latter coupling constant being two orders of magnitude smaller than the former, suggesting the MIL-47(V) to present quasi-1D behavior. The electronic structure of the different spin configurations is investigated and it shows that the band gap position varies strongly with the spin configuration. The valence and conduction bands show a clear V d-character. In addition, these bands are flat in directions orthogonal to VO6 chains, while showing dispersion along the the direction of the VO6 chains, similar as for other quasi-1D materials.


1994 ◽  
Author(s):  
J. Armbruster ◽  
T.R. Cummins ◽  
J. Fink ◽  
M.S. Golden ◽  
M. Knupfer ◽  
...  

2013 ◽  
Vol 701 ◽  
pp. 125-130
Author(s):  
Salameh Ahmad

Myab initioelectronic structure calculations inRSn2n-1Te2n, n=16, R = a vacancy, Cd, and In show that when Sn atom is substituted by R, the Density of State (DOS) of the valence and conduction bands get strongly perturbed. There are significant changes near the band gap region. Sn vacancy causes very little change near the bottom of the conduction band DOS whereas there is an increase in the DOS near the top of the valence band. Results for In impurity shows that, unlike PbTe, the deep defect states in SnTe are resonant states near the top of the valence band. In PbTe these deep defect states lie in the band-gap region (act asn-type). This fundamental difference in the position of the deep defect states in SnTe and PbTe explains the experimental anomalies seen in the case of In impurities (act asn-type in PbTe andp-type in SnTe).


2007 ◽  
Vol 98 (15) ◽  
Author(s):  
T. Kondo ◽  
R. Khasanov ◽  
J. Karpinski ◽  
S. M. Kazakov ◽  
N. D. Zhigadlo ◽  
...  

2001 ◽  
Vol 691 ◽  
Author(s):  
Kenji Koga ◽  
Koji Akai ◽  
Kazunori Oshiro ◽  
Mitsuru Matsuura

ABSTRACTElectronic structure of CoSb3 is calculated by means of full-potential linearlized augmented plane wave (FLAPW) method with the generalized gradient approximation (GGA). The calculated band gap of CoSb3 with the consideration of spin-orbit (SO) interaction is 110meV, which is about a half of that without SO interaction. It is found that simple four bands model with the Kane's nonparabolic valence and conduction bands, two parabolic conduction bands describe calculated electronic structure near band edge very well. Using the simple four bands model, thermoelectric properties are calculated and are discussed. Larger band gap, e.g., Eg=200meV with the microscopic mechanism such as phonon scattering yields a fair agreement with the experiment in a wide range of temperature.


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