Boron(III)-Containing Donor-Acceptor Compound with Goldlike Reflective Behavior for Organic Resistive Memory Devices

2016 ◽  
Vol 55 (11) ◽  
pp. 3647-3651 ◽  
Author(s):  
Chun-Ting Poon ◽  
Di Wu ◽  
Vivian Wing-Wah Yam
Keyword(s):  
Memory Devices ◽  
Resistive Memory ◽  
Donor Acceptor

Well-defined star-shaped donor–acceptor conjugated molecules for organic resistive memory devices

2015 ◽  
Vol 51 (75) ◽  
pp. 14179-14182 ◽  
Author(s):  
Hung-Chin Wu ◽  
Jicheng Zhang ◽  
Zhishan Bo ◽  
Wen-Chang Chen
Keyword(s):  
Charge Storage ◽  
Memory Devices ◽  
Resistive Memory ◽  
Conjugated Molecules ◽  
Storage Materials ◽  
End Groups ◽  
Donor Acceptor ◽  
Solution Processable ◽  
First Time

Solution processable star-shaped donor–acceptor conjugated molecules are explored for the first time as charge storage materials for resistor-type memory devices with a triphenylamine (donor) core, and three 1.8-naphthalimide (acceptors) end-groups.

Boron(III)-Containing Donor-Acceptor Compound with Goldlike Reflective Behavior for Organic Resistive Memory Devices

2016 ◽  
Vol 128 (11) ◽  
pp. 3711-3715 ◽  
Author(s):  
Chun-Ting Poon ◽  
Di Wu ◽  
Vivian Wing-Wah Yam
Keyword(s):  
Memory Devices ◽  
Resistive Memory ◽  
Donor Acceptor

scholarly journals Nonvolatile Ternary Resistive Memory Performance of a Benzothiadiazole-Based Donor–Acceptor Material on ITO-Coated Glass

Coatings ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 318
Author(s):  
Yang Li ◽  
Cheng Zhang ◽  
Zhiming Shi ◽  
Jingni Li ◽  
Qingyun Qian ◽  
...  
Keyword(s):  
Data Storage ◽  
High Performance ◽  
Memory Performance ◽  
Resistive Memory ◽  
Molecular Systems ◽  
Threshold Voltages ◽  
Donor Acceptor ◽  
Low Threshold ◽  
Multilevel Memory ◽  
Further Development

The explosive growth of data and information has increasingly motivated scientific and technological endeavors toward ultra-high-density data storage (UHDDS) applications. Herein, a donor−acceptor (D–A) type small conjugated molecule containing benzothiadiazole (BT) is prepared (NIBTCN), which demonstrates multilevel resistive memory behavior and holds considerable promise for implementing the target of UHDDS. The as-prepared device presents distinct current ratios of 105.2/103.2/1, low threshold voltages of −1.90 V and −3.85 V, and satisfactory reproducibility beyond 60%, which suggests reliable device performance. This work represents a favorable step toward further development of highly-efficient D−A molecular systems, which opens more opportunities for achieving high performance multilevel memory materials and devices.

Flicker Noise Behavior in Resistive Memory Devices With Double-Layered Transition Metal Oxide

2013 ◽  
Vol 34 (2) ◽  
pp. 244-246 ◽  
Author(s):  
Jung-Kyu Lee ◽  
Sunghun Jung ◽  
Byeong-In Choe ◽  
Jinwon Park ◽  
Sung-Woong Chung ◽  
...  
Keyword(s):  
Transition Metal ◽  
Metal Oxide ◽  
Flicker Noise ◽  
Transition Metal Oxide ◽  
Memory Devices ◽  
Resistive Memory ◽  
Layered Transition Metal

Integrating Multiple Resistive Memory Devices on a Single Carbon Nanotube

2013 ◽  
Vol 23 (45) ◽  
pp. 5631-5637 ◽  
Author(s):  
David Brunel ◽  
Costin Anghel ◽  
Do-Yoon Kim ◽  
Saïd Tahir ◽  
Stéphane Lenfant ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Memory Devices ◽  
Resistive Memory

Influence of Copper on the Switching Properties of Hafnium Oxide-Based Resistive Memory

2011 ◽  
Vol 1337 ◽  
Author(s):  
B.D. Briggs ◽  
S.M. Bishop ◽  
K.D. Leedy ◽  
B. Butcher ◽  
R. L. Moore ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Hafnium Oxide ◽  
Copper Concentration ◽  
Atomic Layer ◽  
Metal Electrode ◽  
Pulse Mode ◽  
Switching Behavior ◽  
Material Structure ◽  
Memory Devices ◽  
Resistive Memory

ABSTRACTHafnium oxide-based resistive memory devices have been fabricated on copper bottom electrodes. The HfOx active layers in these devices were deposited by atomic layer deposition at 250 °C with tetrakis(dimethylamido)hafnium(IV) as the metal precursor and an O2 plasma as the reactant. Depth profiles of the HfOx by x-ray photoelectron spectroscopy and secondary ion mass spectroscopy revealed a copper concentration on the order of five atomic percent throughout the HfOx film. This phenomenon has not been previously reported in resistive switching literature and therefore may have gone unnoticed by other investigators. The MIM structures fabricated from the HfOx exhibited non-polar behavior, independent of the top metal electrode (Ni, Pt, Al, Au). These results are analogous to the non-polar switching behavior observed by Yang et al. [2] for intentionally Cu-doped HfOx resistive memory devices. The distinguishing characteristic of the material structure produced in this research is that the copper concentration increases to 60 % in a conducting surface copper oxide layer ~20 nm thick. Lastly, the results from both sweep- and pulse-mode current-voltage measurements are presented and preliminary work on fabricating sub-100 nm devices is summarized.

scholarly journals Influence of Cu diffusion conditions on the switching of Cu–SiO2-based resistive memory devices

2010 ◽  
Vol 518 (12) ◽  
pp. 3293-3298 ◽  
Author(s):  
S. Puthen Thermadam ◽  
S.K. Bhagat ◽  
T.L. Alford ◽  
Y. Sakaguchi ◽  
M.N. Kozicki ◽  
...  
Keyword(s):  
Memory Devices ◽  
Resistive Memory

Linkage and donor–acceptor effects on resistive switching memory devices of 4-(N-carbazolyl)triphenylamine-based polymers

RSC Advances ◽  
2016 ◽  
Vol 6 (34) ◽  
pp. 28815-28819 ◽  
Author(s):  
Tzu-Tien Huang ◽  
Chia-Liang Tsai ◽  
Sheng-Huei Hsiao ◽  
Guey-Sheng Liou
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Resistive Switching Memory ◽  
Linkage Effect ◽  
Donor Acceptor ◽  
Switching Memory

In order to gain deeper insight about the linkage effect and donor–acceptor effect on memory behavior (from DRAM to WORM), 4-(N-carbazolyl)triphenylamine-based polyimides and polyamides were synthesized and their memory behaviours were investigated.

NiO-based resistive memory devices with highly improved uniformity boosted by ionic liquid pre-treatment

2019 ◽  
Vol 480 ◽  
pp. 57-62 ◽  
Author(s):  
Xin Kang ◽  
Jiajun Guo ◽  
Yingjie Gao ◽  
Shuxia Ren ◽  
Wei Chen ◽  
...  
Keyword(s):  
Ionic Liquid ◽  
Memory Devices ◽  
Resistive Memory ◽  
Pre Treatment

Experimental and Theoretical Investigation of Minimization of Forming-Induced Variability in Resistive Memory Devices

2015 ◽  
Vol 1729 ◽  
pp. 53-58
Author(s):  
Brian L. Geist ◽  
Dmitri Strukov ◽  
Vladimir Kochergin
Keyword(s):  
Metal Oxide ◽  
Diffusion Processes ◽  
Memory Device ◽  
Device Fabrication ◽  
Oxide Material ◽  
Memory Devices ◽  
Resistive Memory ◽  
Conductive Filament ◽  
Metal Metal ◽  
Metal Oxide Layer

ABSTRACTResistive memory materials and devices (often called memristors) are an area of intense research, with metal/metal oxide/metal resistive elements a prominent example of such devices. Electroforming (the formation of a conductive filament in the metal oxide layer) represents one of the often necessary steps of resistive memory device fabrication that results in large and poorly controlled variability in device performance. In this contribution we present a numerical investigation of the electroforming process. In our model, drift and Ficks and Soret diffusion processes are responsible for movement of vacancies in the oxide material. Simulations predict filament formation and qualitatively agreed with a reduction of the forming voltage in structures with a top electrode. The forming and switching results of the study are compared with numerical simulations and show a possible pathway toward more repeatable and controllable resistive memory devices.

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