LiBSi2: A Tetrahedral Semiconductor Framework from Boron and Silicon Atoms Bearing Lithium Atoms in the Channels

2013 ◽  
Vol 52 (23) ◽  
pp. 5978-5982 ◽  
Author(s):  
Michael Zeilinger ◽  
Leo van Wüllen ◽  
Daryn Benson ◽  
Verina F. Kranak ◽  
Sumit Konar ◽  
...  
Keyword(s):  
Tetrahedral Semiconductor

Electronic, elastic and dynamic properties of the filled tetrahedral semiconductor LiMgN under pressures

2015 ◽  
Vol 231 ◽  
pp. 1-6 ◽  
Author(s):  
H.Y. Wu ◽  
Y.H. Chen ◽  
C.R. Deng ◽  
X.Y. Han ◽  
Z.J. Liu
Keyword(s):  
Dynamic Properties ◽  
Tetrahedral Semiconductor

Growth and band gap of the filled tetrahedral semiconductor LiZnN

1999 ◽  
Vol 198-199 ◽  
pp. 802-805 ◽  
Author(s):  
K Kuriyama ◽  
R Taguchi ◽  
K Kushida ◽  
K Ushiyama
Keyword(s):  
Band Gap ◽  
Tetrahedral Semiconductor

LiBSi2: A Tetrahedral Semiconductor Framework from Boron and Silicon Atoms Bearing Lithium Atoms in the Channels

2013 ◽  
Vol 125 (23) ◽  
pp. 6094-6098 ◽  
Author(s):  
Michael Zeilinger ◽  
Leo van Wüllen ◽  
Daryn Benson ◽  
Verina F. Kranak ◽  
Sumit Konar ◽  
...  
Keyword(s):  
Tetrahedral Semiconductor

Preparation and characterization of the filled tetrahedral semiconductor LiZnP film on quartz

1989 ◽  
Vol 66 (8) ◽  
pp. 3945-3947 ◽  
Author(s):  
K. Kuriyama ◽  
T. Katoh ◽  
S. Tsuji
Keyword(s):  
Tetrahedral Semiconductor

Tight-binding prediction of tetrahedral semiconductor ionization potentials

1989 ◽  
Vol 39 (18) ◽  
pp. 13518-13520 ◽  
Author(s):  
I. Lefebvre ◽  
M. Lannoo ◽  
G. Allan
Keyword(s):  
Tight Binding ◽  
Ionization Potentials ◽  
Binding Prediction ◽  
Tetrahedral Semiconductor

Growth and band gap of the filled tetrahedral semiconductor LiMgN

2002 ◽  
Vol 237-239 ◽  
pp. 2019-2022 ◽  
Author(s):  
K. Kuriyama ◽  
K. Nagasawa ◽  
K. Kushida
Keyword(s):  
Band Gap ◽  
Tetrahedral Semiconductor
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