High-Quality Boron Nitride Nanoribbons: Unzipping during Nanotube Synthesis

2013 ◽  
Vol 52 (15) ◽  
pp. 4212-4216 ◽  
Author(s):  
Ling Li ◽  
Lu Hua Li ◽  
Ying Chen ◽  
Xiujuan J. Dai ◽  
Peter R. Lamb ◽  
...  
2013 ◽  
Vol 125 (15) ◽  
pp. 4306-4310 ◽  
Author(s):  
Ling Li ◽  
Lu Hua Li ◽  
Ying Chen ◽  
Xiujuan J. Dai ◽  
Peter R. Lamb ◽  
...  

Nano Letters ◽  
2011 ◽  
Vol 11 (8) ◽  
pp. 3221-3226 ◽  
Author(s):  
Kris J. Erickson ◽  
Ashley L. Gibb ◽  
Alexander Sinitskii ◽  
Michael Rousseas ◽  
Nasim Alem ◽  
...  

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Hitesh Agarwal ◽  
Bernat Terrés ◽  
Lorenzo Orsini ◽  
Alberto Montanaro ◽  
Vito Sorianello ◽  
...  

AbstractElectro-absorption (EA) waveguide-coupled modulators are essential building blocks for on-chip optical communications. Compared to state-of-the-art silicon (Si) devices, graphene-based EA modulators promise smaller footprints, larger temperature stability, cost-effective integration and high speeds. However, combining high speed and large modulation efficiencies in a single graphene-based device has remained elusive so far. In this work, we overcome this fundamental trade-off by demonstrating the 2D-3D dielectric integration in a high-quality encapsulated graphene device. We integrated hafnium oxide (HfO2) and two-dimensional hexagonal boron nitride (hBN) within the insulating section of a double-layer (DL) graphene EA modulator. This combination of materials allows for a high-quality modulator device with high performances: a ~39 GHz bandwidth (BW) with a three-fold increase in modulation efficiency compared to previously reported high-speed modulators. This 2D-3D dielectric integration paves the way to a plethora of electronic and opto-electronic devices with enhanced performance and stability, while expanding the freedom for new device designs.


Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 222
Author(s):  
Pervaiz Ahmad ◽  
Mayeen Uddin Khandaker ◽  
Fida Rehman ◽  
Nawshad Muhammad ◽  
Mohammad Rashed Iqbal Faruque ◽  
...  

The interesting properties of hexagonal boron nitride (h-BN) and its potential uses in thermo-structural advanced applications have been limited or restricted by its inherent brittleness, which can easily be eliminated by its fibers (h-BN) in nanoscale dimensions. The current study is based on the synthesis of nanoscale 10B-enriched fibers of h-BN (10BNNFs) from 10B in the precursors instead of B in two-hour annealing at 900 °C and one-hour growth at 1000 °C. All of the 10BNNFs are randomly curved and highly condensed or filled from 10h-BN species with no internal space or crack. XRD peaks reported the 10h-BN phase and highly crystalline nature of the synthesized 10BNNFs. 10h-BN phase and crystalline nature of 10BNNFs are confirmed from high-intensity peaks at 1392 (cm−1) in Raman and FTIR spectroscopes.


2009 ◽  
Vol 5 (11) ◽  
pp. 3088-3095 ◽  
Author(s):  
Wei Chen ◽  
Yafei Li ◽  
Guangtao Yu ◽  
Zhen Zhou ◽  
Zhongfang Chen

2015 ◽  
Vol 17 (34) ◽  
pp. 22448-22454 ◽  
Author(s):  
K. Zberecki ◽  
R. Swirkowicz ◽  
J. Barnaś

Conventional and spin related thermoelectric effects in zigzag boron nitride nanoribbons are studied theoretically within the Density Functional Theory (DFT) approach.


2016 ◽  
Vol 49 (11) ◽  
pp. 115301 ◽  
Author(s):  
Xue-Kun Chen ◽  
Zhong-Xiang Xie ◽  
Wu-Xing Zhou ◽  
Ke-Qiu Chen

2021 ◽  
Vol 13 (39) ◽  
pp. 47283-47292
Author(s):  
Yongliang Chen ◽  
Chi Li ◽  
Simon White ◽  
Milad Nonahal ◽  
Zai-Quan Xu ◽  
...  

Nanoscale ◽  
2021 ◽  
Author(s):  
Yifei Li ◽  
Xin Wen ◽  
Changjie Tan ◽  
Ning Li ◽  
Ruijie Li ◽  
...  

Owing to its irreplaceable roles in new functional devices, such as universal substrates and excellent layered insulators, high-quality hexagonal BN (hBN) crystals are exceedingly required in the field of two-dimensional...


1994 ◽  
Vol 65 (8) ◽  
pp. 971-973 ◽  
Author(s):  
Fangqing Zhang ◽  
Yongping Guo ◽  
Zhizhong Song ◽  
Guanghua Chen

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